• The Korean Journal of Nuclear Medicine
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• v.21 no.1
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• pp.83-88
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• 1987

$^{67}Ga$ Scanning may be a useful adjuvant in screening for suspected extrapulmonary tuberculosis and in assessing the response of therapy. A 52-year-old man with renal tuberculosis showed a renal localization of $^{67}Ga-citrate$ scans. Follow-up Scans after 3 months of chemotherapy showed decrease in uptake. So we present a case with the brief review of literatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.443-443
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• 2012

We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.142.1-142.1
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• 2018

This research presents a new field effect transistor (FET) by using liquid crystal gate dielectric with remote gate. The fabrication of thin-film transistors (TFTs) was used Indium tin oxide (ITO) for the source, drain, and gate electrodes, and indium gallium zinc oxide (IGZO) for the active semiconductor layer. 5CB liquid crystal was used for the gate dielectric material, and the remote gate and active layer were covered with the liquid crystal. The output and transfer characteristics of the LC-gated TFTs were investigated.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.477-485
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• 2016

As expensive and valuable metals being used in electronic and semiconducting industries are abandoned as industrial wastes after use of them, it is required to recover them from e-wasted electronics parts. Gold which is used for printed circuit boards or electronic equipments, accessories, etc., is one of e-Wasted materials and recently indium, gallium, zirconium, cobalt, molybdenum and lithium are bacome valuable metals to be recovered from the e-wastes. Since the amount of precious metals is now being faced with scarcity, lean too much on area and instability of supply, and industrial demands are rapidly increasing every year, it becomes more important to recover the valuable metals from the industrial wastes. In this review, we introduced technologies and research trend of the recovery processes of valuable metals from the e-wastes in high-tech devices over the world.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.354-358
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• 1996

High indium incorporation was observed in InGaAs growth by precursor alternating metalorganic chemical vapor deposition (PAMOCVD). A possible mechanism of high indium incorporation into the crystal in PAMOCVD was proposed by considering the decomposition products of gallium and indium precursors, and thus the different adsorption behavior of the decomposed precursor molecules.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.531-533
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• 2009

We've studied the optical and electrical properties of amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the offstate drain current was slightly increased, while below 550 nm it was increased significantly. The a-IGZO TFT was extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1586-1589
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• 2009

We investigated the influence of chemical compositions of gallium and indium cations on the performance of solgel derived amorphous gallium indium zinc oxide (a-GIZO) based thin-film transistors (TFTs). Systematical composition study allows us to understand the solutionprocessed a-GIZO TFTs. Understanding of the compositional influence can be utilized for tailoring the solution processed amorphous oxide TFTs for the specific applications.

• Electronic Materials Letters
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• v.14 no.6
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• pp.784-792
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• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Medical Lasers
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• v.9 no.1
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• pp.76-78
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• 2020

Verruca plana is a cutaneous infection caused by the human papilloma virus. Although various treatment methods are currently available, most have limitations due to the risk of complications such as hyperpigmentation, edema, and scarring. Moreover, as the infection tends to spread easily, new verrucae can potentially develop, and treatment procedure times tend to be lengthy. Thus, novel treatment methods are required. The 2790-nm wavelength erbium:yttrium-scandium-gallium-garnet (Er:YSGG) laser is a superficial resurfacing laser. Here, we present a case of a 25-year-old woman with multiple verrucae treated using a 2790-nm Er:YSGG laser. Compared to traditional methods, this novel laser is convenient, produces better cosmetic outcomes, and is less time-consuming; it is therefore suitable for the treatment of facial verruca plana.

• 한국전자현미경학회:학술대회논문집
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• 2002.11a
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• pp.38-40
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• 2002