한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.531-533
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- 2009
Light Effects of amorphous indium gallium zinc oxide thin-film transistor
- Lee, Keun-Woo (School of Electrical and Electronic Engineering, Yonsei University) ;
- Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
- Heo, Kon-Yi (School of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Kyung-Min (School of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
- Published : 2009.10.12
Abstract
We've studied the optical and electrical properties of amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT). When the a-IGZO TFT was illuminated at a wavelength of 660 nm, the offstate drain current was slightly increased, while below 550 nm it was increased significantly. The a-IGZO TFT was extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap.