• 대한기계학회논문집
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• 제19권9호
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• pp.2105-2113
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• 1995

The compressive tests under impact conditions were performed to establish a design guide for impact damage tolerance. The composition of layup was selected for the real cases of composite aircraft structure. The energy level of visible of visible damage threshold was determined as 7 Joules. It was found that the normalized bending stiffnesses in the direction of closely fixed boundary affected the area of damage. Graphite/epoxy used in the tests exhibited 60% reduction in compression strength at the energy level of visible damage threshold. Wet-conditioned specimens represented 9% reduction in residual compressive strength in comparison with room temperature ambient specimens. In this study, a design factor of 2.1 was proposed for the low velocity impact damage.

• Journal of information and communication convergence engineering
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• 제13권2호
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• pp.113-122
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• 2015

Feature subset selection is as a pre-processing step in learning algorithms. In this paper, we propose an efficient algorithm, ModifiedFAST, for feature subset selection. This algorithm is suitable for text datasets, and uses the concept of information gain to remove irrelevant and redundant features. A new optimal value of the threshold for symmetric uncertainty, used to identify relevant features, is found. The thresholds used by previous feature selection algorithms such as FAST, Relief, and CFS were not optimal. It has been proven that the threshold value greatly affects the percentage of selected features and the classification accuracy. A new performance unified metric that combines accuracy and the number of features selected has been proposed and applied in the proposed algorithm. It was experimentally shown that the percentage of selected features obtained by the proposed algorithm was lower than that obtained using existing algorithms in most of the datasets. The effectiveness of our algorithm on the optimal threshold was statistically validated with other algorithms.

• Current Optics and Photonics
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• 제8권3호
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• pp.239-245
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• 2024

This paper proposes single logarithmic amplification (single-LA) and deep learning (DL)-based fixed-threshold on-off keying (OOK) detection for free-space optical (FSO) communication. Multilevel LAs (MLAs) can be used to mitigate intensity fluctuations in the received OOK signal by their nonlinear gain characteristics; however, it is ineffective in the case of high scintillation, owing to degradation of the OOK signal's extinction ratio. Therefore, a DL technique is applied to realize effective scintillation compensation in single-LA applications. Fully connected (FC) networks and fully connected neural networks (FCNN), which have nonlinear modeling characteristics, are deployed in this work. The performance of the proposed method is evaluated through simulations under various scintillation effects. Simulation results show that the proposed method outperforms the conventional adaptive-threshold-decision, single-LA-based, MLA-based, FC-based, and FCNN-based OOK detection techniques.

• 한국전자파학회논문지
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• 제17권10호
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• pp.985-992
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• 2006

고전적인 라우팅 알고리즘들은 목적지에 도달하기 위한 홉 수를 최소화하는데 있다. 본 논문의 DPC는 홉 간 전력 레벨 선택은 경로를 보장하면서 적은 에너지를 소비하도록 사용된다. 모든 상황에서 최고의 성능을 위해서 자동적으로 안전 마진(security threshold)을 설정하기 위한 것으로 안전 마진을 가변하면서 멀티캐스트 라우팅 알고리즘(AMRIS, ODMRP)에 대한 에너지 이득을 통해 에너지 분산 제어 효과를 분석하였다. 본 논문에서 실험한 DPC는 AMRIS 라우팅 알고리즘의 경우에는 node의 존재 영역이 비교적 좁은 곳에서 성능 향상을 볼 수 있었으며, ODMRP 라우팅 방식의 경우는 넓은 영역에서 DPC 적용을 통해 에너지 이득 절감 효과를 얻을 수 있었다.

• ETRI Journal
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• 제27권6호
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.365-370
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• 1998

We studied a electrical properties in GaAs/AlGaAs/InGaAs pseudomorphic high electron mobility transistors(PHEMT s) recessed by electron cyclotron resonance(ECR) plasma and wet etching. Using the $NH_4OH$ solution, a nonvolatile AlF$_3$layer formed on AlGaAs surface after selective gate recess is effectively eliminated. Also, we controlled threshold voltage($V_th$) using $H_3PO_4$ etchant. We have fabricated a device with 540 mS/mm maximum transconductance and -0.2 V threshold voltage by using $NH_4OH$ and $H_3PO_4$dip after ECR gate recessing. In a 2-finger GaAs PHEMT with a gate length of 0.2$\mu m$ and width of 100 $\mu m$, a current gain of 15 dB at 10 GHz and a maximum cutoff frequency of 58.9 GHz have been obtained from the measurement of current gain as a function of frequency at 12mA $I_{dss}$ and 2 V souce-drain voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1094-1097
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• 2003

In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

• 전자공학회논문지A
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• 제32A권2호
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• pp.48-56
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• 1995

The operating characteristics, such as, the threshold gain, lasing frequency, and longitudinal intensity profile, etc., of 1.55$\mu$m DFB laser diode with index and/or gain grating structures and with one side AR-coated mirror have been analyzed. From this analysis, the optimum design parameters have been shown that ${\Delta}{\Omega}$ (the phase difference between index grating and gain grating) is 0 or ${\pi}$, (xL)$_{r}$=1~3 and (xL)$_{i}$=0.5~0.9. It has been also shown that the modal selectivity and intensity uniformity of the DFB lasers with .DELTA..OMEGA.=0 are ~1.2 times better thatn those of the DFB lasers with ${\Delta}{\Omega}$= ${\pi}$.

• 전기전자학회논문지
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• 제14권2호
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• pp.90-97
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• 2010

본 논문에서는 DT-CMOS(Dynamic Threshold voltage CMOS) 스위칭 소자와 DTMOS Error Amplifier를 사용한 고 효율 전원 제어 장치(PMIC)를 제안하였다. 높은 출력 전류에서 고 전력 효율을 얻기 위하여 PWM(Pulse Width Modulation) 제어 방식을 사용하여 PMIC를 구현하였으며, 낮은 온 저항을 갖는 DT-CMOS를 설계하여 도통 손실을 감소시켰다. 벅 컨버터(Buck converter) 제어 회로는 PWM 제어회로로 되어 있으며, 삼각파 발생기, 밴드갭 기준 전압 회로, DT-CMOS 오차 증폭기, 비교기가 하나의 블록으로 구성되어 있다. 제안된 DT-CMOS 오차증폭기는 72dB DC gain과 83.5위상 여유를 갖도록 설계하였다. DTMOS를 사용한 오차증폭기는 CMOS를 사용한 오차증폭기 보다 약 30%정도 파워 소비 감소를 보였다. Voltage-mode PWM 제어 회로와 낮은 온 저항을 스위칭 소자로 사용하여 구현한 DC-DC converter는 100mA 출력 전류에서 95%의 효율을 구현하였으며, 1mA이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

• 한국통신학회논문지
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• 제31권11A호
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• pp.1113-1119
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• 2006

적응형 자원 할당에 대해 낮은 복잡도를 요구하는 이동 채널에서의 다중 사용자 OFDM 시스템을 위해 다중 임계치를 사용하는 자원 할당 알고리듬을 제안한다. 임계치의 내림차순으로 할당을 수행하며, 각 임계치를 넘어서는 채널값을 갖는 부반송파에 대해서만 할당을 고려한다. 또한, 낮은 채널값을 갖는 부반송파들을 제거하여도 요구 데이터율을 여전히 만족시킬 수 있다면, 현재의 임계치를 이용한 할당 과정에서 해당 부반송파를 제거하여 다음 임계치에 대한 할당 과정에서 다른 사용자들을 위해 재할당되도록 한다. 제안된 대역폭 및 부반송파 할당알고리듬은 필요 전력과 할당에 소요되는 시간에 대해서 기존의 알고리듬들에 비해 매우 우수한 성능을 가지기 때문에 이동 환경에서 OFDM 시스템의 스펙트럼 효율을 높일 수 있는 기술로 예상된다.