• 전자공학회논문지A
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• 제30A권9호
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• pp.24-29
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• 1993

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.

• 대한전자공학회논문지
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• 제27권2호
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• pp.93-97
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• 1990

도핑된 半導體 界面의 界面電荷 近似式과 構造를 提案하였다. III-V族 化合物 半導體인 p-GaP,p-InP,n-GaAs와 $C_sNO_3$ 水性 電解質 界面에서 整流現象은 循環電流-電壓特性으로 定性的 解析을 하였다. 半導體 界面의 電流-電壓 特性曲線, 이온 吸着과 電位障壁 過程은 連續循環電壓方法으로 實證하였다. 도핑된 半導體-電解質 界面에서 pn 또는 np 接合構造와 그에 따른 整流形은 空間電荷에 의하여 決定된다.

• 한국광학회지
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• 제3권4호
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• pp.252-257
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• 1992

본 연구에서는 수직형 LPE 장치를 이용하여 InGaAsP/InP MQW-DH웨이퍼를 성장하고 10$\mu$m stripe MQW-LD를 제작하였다. 공진기 길이 470$\mu$m LD의 경우 이득스펙트럼 중심파장은 1.32$\mu$m였다. 발전파장은 1.302$\mu$m로써 양자우물두께 300$\AA$의 이득중심에 해당한다는 사실을 알 수 있었다.

• 전기전자학회논문지
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• 제22권1호
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• pp.209-212
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• 2018

본 논문에서는 P(VDF-TrFE)유기물 강유전체 기반 metal-ferroelectric-metal (MFM) capacitor 와 차세대 반도체 물질인 질화갈륨 반도체를 활용한 네거티브 커패시턴스 전계효과 트랜지스터를 제작 및 분석 하였다. 27 nm의 두께의 P(VDF-TrFE) MFM 커패시터의 분극지수는 4 MV/cm에서 $6{\mu}C/cm^2$ 값을 나타내었으며 약 65 ~ 95 pF의 커패시턴스 값을 나타내었다. 강유전체의 커패시턴스와 전계효과 트랜지스터의 커패시턴스 매칭을 분석하기 위해 제작된 P(VDF-TrFE) MFM 커패시터는 GaN 전계효과 트랜지스터의 게이트 전극에 집적화 되었으며 집적화되기 전 104 mV/dec 의 문턱전압 이하 기울기에서 82 mV/dec 값으로 개선된 효과를 보였다.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.81-84
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• 2016

InP/InGaP quantum structures (QSs) grown on GaAs substrates by a migration-enhanced molecular beam epitaxy method were studied as a function of growth temperature (T) using photoluminescence (PL) and emission-wavelength-dependent time-resolved PL (TRPL). The growth T were varied from $440^{\circ}C$ to $520^{\circ}C$ for the formation of InP/InGaP QSs. As growth T increases from $440^{\circ}C$ to $520^{\circ}C$, the PL peak position is blue-shifted, the PL intensity increases except for the sample grown at $520^{\circ}C$, and the PL decay becomes fast at 10 K. Emission-wavelength-dependent TRPL results of all QS samples show that the decay times at 10 K are slightly changed, exhibiting the longest time around at the PL peak, while at high T, the decay times increase rapidly with increasing wavelength, indicating carrier relaxation from smaller QSs to larger QSs via wetting layer/barrier. InP/InGaP QS sample grown at $460^{\circ}C$ shows the strongest PL intensity at 300 K and the longest decay time at 10 K, signifying the optimum growth T of $460^{\circ}C$.

• 한국동물학회:학술대회논문집
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• 한국동물학회 1999년도 한국생물과학협회 학술발표대회
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• pp.150.2-150
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• 1999

To investigate the weathering soil buffering capacities of the artificial acidic precipitation, the weathering soils and their leachate solutions were sampled from the host rocks(granite;GR, rhyolite;RH, gabbro;GA, basalt;BA, two serpentinite;SE1, SE2 and limestone;LI) and analyzed for pH and chemical properties. 1n the soil pH of the GR and RH ,the acidic rocks, were 5.02 and 5.95, respectively. And the GA and BA, basic rocks, were 6.52 and 7.57. The SE1 and SE2 were 8.90 and 8.89. While the LI was 7.84. These results means the typical soil pH properties by host rocks. After the artificial acidic precipitation input 5OOml, the average changes of soil leachate solutions treated by pH levels(pH 5.0, 4.0 and 3.0), were pH 5.73, 5.00 and 4.40. in GR soil, and pH 6.19, 5.99 and 5.57 in RH. GA were pH 6.31, 6.04 and 5.86, BA were pH 7.05, 6.85 and 6.56 and SE1 were pH 8.31, 8.26 and 7.71. SE2 were pH 8.29, 8.24 and 7.96. LI were pH 7.55, 7.46 and 6.79. The soil leachate pHs from volcanic rocks were higher than those from the plutonic rocks and GR soils showed greater response than other soils. With increasing 100ml input-solution, the soil leachate pHs were mainly decreased. Cation concentrations, CEC, EC and total nitrogen concentrations of RH and BA soils, the volcanic rocks, were higher than those of GR and GA soil, the plutonic rocks. On the contrary, Al concentrations of the GR and GA soils were higher than those of RH and BA soils, partly because of high quartz content in GR and Al content in the biotite and plagioclase in GA.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• 생명과학회지
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• 제25권4호
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• pp.390-396
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• 2015

본 연구는 항산화 기능이 뛰어나다고 알려진 며느리배꼽(Persicaria perfoliata)의 캘러스를 사용하여, 어떤 식물호르몬이 부정근 형성에 영향을 미치는지 알아보기 위한 실험이다. 며느리배꼽의 잎으로부터 캘러스를 유도하고 이로부터 부정근 형성을 관찰하였다. 캘러스 유도의 최적 조건을 구한 결과 1% sucrose, 4.5 μM 2.4-D, 1/2 MS였다. 어떤 식물호르몬이 이 식물의 캘러스에서 부정근 형성 효과를 가지고 있는지 알아보기 위하여 GA₃, IAA, 2iP, 2,4-D를 캘러스 조직에 각각 첨가한 결과, GA₃와 IAA를 첨가한 배지에서만 부정근이 나타났음을 확인 할 수 있었다. 이를 자세히 조사하기 위해서 GA₃와 IAA의 농도별(0.1, 1, 10 mg/l) 부정근 형성, 길이 및 직경을 알아본 결과, 높은 수준의 GA₃ 또는 낮은 수준의 IAA처리에서 더 많은 부정근 형성을 보였다. 이 두 호르몬 중 어떤 것이 더욱 더 중요한 역할을 하는지 알아보기 위하여 옥신 유입 저해제인 NPA와 지베렐린 생합성 저해제인 PBZ를 처리한 실험을 한 결과, GA₃가 IAA 보다 부정근 형성에 더욱 더 중요한 역할이라는 것을 알았다. 하여 지베렐린의 수준을 증가 또는 감소시킨다고 알려진 식물호르몬(IAA, 2iP, kinetin, ABA)들을 GA₃와 혼용 처리한 결과, 이 역시 지베렐린이 부정근을 형성하는데 중요한 역할을 한다는 것을 재확인 하였다. 본 연구는 지베렐린이 며느리배꼽의 캘러스에서 부정근 형성을 증진시킨다는 것을 처음으로 밝힌다.

• Current Applied Physics
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• 제18권11호
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• pp.1190-1195
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• 2018

By employing soft X-ray magnetic circular dichroism (XMCD), soft X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES), we have investigated the electronic structure of the candidate zero-moment half-metallic $Mn_3Ga$. We have studied the ball-milled and annealed $Mn_3Ga$ powder samples that exhibit nearly zero magnetization. Mn 2p XAS revealed that Mn ions in $Mn_3Ga$ are nearly divalent for both of the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry. The measured Mn 2p XMCD spectrum of $Mn_3Ga$ is very similar to that of ferrimagnetic $MnFe_2O_4$ having divalent Mn ions. The sum-rule analysis of the Mn 2p XMCD spectrum shows that both the spin and orbital magnetic moments of Mn ions in $Mn_3Ga$ are negligibly small, in agreement with the nearly compensated-ferrimagnetic ground state of $Mn_3Ga$. The valence-band PES spectrum of $Mn_3Ga$ agrees well with the calculated density of states, supporting the half-metallic electronic structure of $Mn_3Ga$.

• 대한전자공학회논문지
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• 제26권9호
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• pp.1369-1374
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• 1989

Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.