• Journal of Institute of Control, Robotics and Systems
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• v.8 no.5
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.8
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• pp.1309-1316
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.222-222
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• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.2
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• pp.218-225
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.164-167
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• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.484-487
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• 1997

The dicing is a process of gaining chip from a wafer. It is done by some mechanism to lengthwise and crosswise. Here, it is focused on measuring a depth of the wafer hefore a process of the dicing. First of all, it checks a precise outer position for the wafer on table to gain the chip. Second, the xafer should he lined after Imowing how much depth, it is in out of the outer position of the wafer. Here suggests that there are a composition of mechanical system, how to measure a depth out of scriber axis, a result from testing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.729-732
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• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting condition. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In order to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber, breaker, and precision servo mechanism in order to dice an semiconductor wafer.