• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.116-119
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• 2003

$Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1526-1528
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• 2007

In this report, Manganese doped magnesium germanate ($Mg_4GeO_2:Mn$) phosphor has been synthesized by the solid state method. Also, this phosphor was prepared by simple process under an air atmosphere for oxidation of Mn. The prepared phosphor shows a main luminescent peak at 661nm. Therefore, this phosphor is possible to be applicable to white LED lamp by GaN or InGaN chips.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• 한국전자현미경학회:학술대회논문집
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• 2004.11a
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• pp.133-135
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.85-86
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.214-214
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.73-73
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.61.1-61.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.148-149
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• 2002

In recent years, semiconductor spintronics has been rapidly developing due to potential device applications, in which the spin of charge carriers (electrons or holes) provides novel functionalities to carry signals and process information. Diluted magnetic semiconductors (DMSs) are well known to exhibit intriguing properties such as carrier-mediated ferromagnetism and spin-dependent transport resulting from the coupling between the charge transport states and the magnetic moments (spin) [1-3]. (omitted)

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.51.1-51.1
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• 2007