Tunneling magnetoresistance in GaMnAs-based double-barrier heterostructures

  • Ohya S. (Department of Electronic Engineering, The University of Tokyo) ;
  • Hai P. N. (Department of Electronic Engineering, The University of Tokyo) ;
  • Tanaka M. (Department of Electronic Engineering, The University of Tokyo, Japan Science and Technology Corporation)
  • Published : 2005.12.01