• Title/Summary/Keyword: GaMnAs

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Growth of $ZnGa_2O_4:Mn^{2+}$ Thin Film Phosphors by RF Magnetron Sputtering (박막 형광체 $ZnGa_2O_4:Mn^{2+}$의 RF Magnetron Sputtering법을 이용한 생장)

  • Kim J.S.;Lee S.H.;Park J.H.;Park H.W.;Choi J.C.;Park H.L.
    • Journal of the Korean Vacuum Society
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    • v.15 no.4
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    • pp.404-409
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    • 2006

  • Thin-film $ZnGa_2O_4 : Mn^{2+}$ phosphors of spinel structure were grown on quartz substrate by RF magnetron sputtering method at room temperature. As an increase of post-annealing temperatures, crystallinity, surface roughness and stoichiometry of thin films were varied. At the post-annealing temperatures of $500^{\circ}C$ and $600^{\circ}C$, the luminescence intensity was poor due to the poor crystallinity. The smallest surface roughness was observed at the sample post-annealed at $700^{\circ}C$ leading to low external extraction efficiency, and poor luminescence intensity. The highest luminescence intensity was shown at the sample post-annealed at $800^{\circ}C$. It was because both the surface roughness and crystallnity were optimized. On the other hand, at $900^{\circ}C$, the luminescence intensity was poor due to the violation of stoichiometry.

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