• 제목/요약/키워드: GaAlAs laser

검색결과 119건 처리시간 0.034초

Coherent Absorption Spectroscopy with Supercontinuum for Semiconductor Quantum Well Structure

  • Byeon, Ciare C.;Oh, Myoung-Kyu;Kang, Hoon-Soo;Ko, Do-Kyeong;Lee, Jong-Min;Kim, Jong-Su;Choi, Hyoung-Gyu;Jeong, Mun-Seok;Kee, Chul-Sik
    • Journal of the Optical Society of Korea
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    • 제11권3호
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    • pp.138-141
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    • 2007
  • We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

Performance of Hot-dip Zn-6%Al-3%Mg Alloy Coated Steel Sheet as Automotive Body Material

  • Shimizu, Takeshi;Asada, Hiroshi;Morikawa, Shigeru
    • Corrosion Science and Technology
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    • 제9권2호
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    • pp.74-80
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    • 2010
  • For the purpose of applying a hot-dip Zn-6mass%Al-3mass%Mg alloy coated steel sheet (ZAM) to automotive body materials, a laboratory study of the general properties required for inner and outer panels of automotive bodies was performed. Even with only light coating weight, ZAM showed an excellent corrosion resistance in terms of both cosmetic and perforation corrosion compared to the currently used materials for automotive bodies, GI70 and GA45. In our study, it was confirmed that ZAM exhibits as good as or better properties than GI70 in terms of spot weldability and press formability. Furthermore, since the same corrosion resistance can be achieved with less coating weight by applying ZAM, laser weldability is better than GI and GA.

양자선 레이저의 공진기 길이 변화에 따른 시간적 및 공간적 특성 (Cavity-Length-Dependent Spectral and Temporal Characteristics of the Quantum Wire Laser)

  • 최영철;김태근
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1094-1097
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    • 2003
  • In this paper, the cavity-length-dependent spectral and temporal characteristics of a V-groove AlGaAs-GaAs quantum wire (QWR) laser at each subband were investigated. At short cavity lasers less than $300{\mu}m$, a discrete wavelength switching from the n=1 to the n=2 subband occurred due to the increased threshold gain, resulting from the increased cavity loss. Using the characteristic of the wavelength shift from n=1 to the n=2 subband with shortening the cavity length, ultrafast lasing behaviors under gain switching at the n=1 and the n=2 subband transition were demonstrated and compared.

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Al2O3 기판위에 증착한 ZnGa2O4 형광체 박막의 산소분압에 따른 형광특성 (Photoluminescence Behaviors of the ZnGa2O4 Phosphor Thin Films on Al2O3 substrates as a Function of Oxygen Pressures)

  • 이성수
    • 센서학회지
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    • 제11권2호
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    • pp.118-123
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    • 2002
  • $ZnGa_2O_4$ 형광체 박막을 기판 온도를 $550^{\circ}C$에 고정시키고 산소 분압을 100, 200, 300 mTorr로 변화시키며 $Al_2O_3$(0001) 기판 위에 펄스 레이저 증착법을 이용하여 증착하였다. 다른 산소 분압에서 성장한 박막들의 미세 결정구조와 형광특성을 조사하였으며, 산소분압이 증가할수록 박막의 결정성이 변화하였으며 박막의 조성비가 다름을 형광특성을 통하여 알 수 있었다. 발광 스펙트럼은 460 nm에서 최고 피크값 을 나타내었으며, 300 nm에서 600 nm까지 갖는 넓은 밴드의 형광 특성을 나타내었다. 최적의 조건에서 성장된 박막의 형광 밝기를 고려해볼 때 $Al_2O_3$(0001) 기관이 우수한 $ZnGa_2O_4$ 형광체 박막을 성장시킬 수 있는 기판들 중 하나임을 확인하였다.

자연 성장된 InAs/AlAs 양자점의 Photoreflectance 특성 (Self-Assembled InAs/AlAs Quantum Dots Characterization Using Photoreflectance Spectroscopy)

  • 김기홍;심준형;배인호
    • 한국진공학회지
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    • 제18권3호
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    • pp.208-212
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    • 2009
  • MBE법으로 성장된 InAs/AlAs 양자점(quantum dots; QD) 구조의 광학적 특성을 photoreflectance(PR) 이용하여 조사하였다. Wetting layer(WL) 두께에 따른 전체 장벽의 폭이 달라짐에 따라 GaAs 완충층 및 WL 신호의 세기가 변화되었다. QD 층이 식각된 시료의 상온 PR측정 결과로부터 $1.1{\sim}1.4\;eV$ 영역의 완만한 신호는 InAs QDs과 WL에 관련된 신호임을 알았다. 온도 $450{\sim}750^{\circ}C$범위에서 열처리 시켰을 때 WL층의 PR 신호가 red shift하였는데, 이는 열처리 후 InAs WL와 AlAs층 사이에 Al과 In의 내부 확산에 의해 양자점의 크기가 균일하게 재분포 되고, WL의 임계 두께가 증가하였음을 나타낸다.

흰 쥐의 선상 절개 창상모델에서 저출력 레이저 자극이 조직 염증반응에 미치는 영향 (The Effects of Low Power Laser Treatment on Tissue Inflammatory Reactions in the Linear Incision Wound on Rat Skin)

  • 임인혁;이정원;김현숙
    • 한국전문물리치료학회지
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    • 제10권2호
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    • pp.61-70
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    • 2003
  • The purposes of this study was to evaluate the effect of low power GaAsAl laser on tissue contraction in a linear incision wound on rat skin. The linear incision wound was made on the midline of the backside in the experimental animals. Low power laser applications with different intensities such as 3, 6, or 10 mW were applied to the experimental animals twice a day for 10 days. On either the seventh or tenth postoperative day, the quantitative analysis of the inflammatory reaction surrounding the linear incision wounds on the rats were performed using enzymatical analysis of myeloperoxidase (MPO) activity. The number of neutrophil was $.07-1.0{\times}106/m{\ell}$ from a normal blood sample that was obtained from the normal experimental animals. Each concentration of neutrophil showed .04-.62 unit activity of MPO. Therefore, the 6 unit activity of MPO per neutrophil was $.57{\pm}.014{\times}10^{-6}$ unit. On the 7th and 10th post operative day, non treated tissues demonstrated increased MPO activity as compared to that of normal tissue. These data indicated that the inflammatory reaction of tissue was induced after wound induction and the MPO activity were increased in the inflammed tissues. While both 3 mW or 6 mW intensity of laser treatments did not affect the tissue MPO activity, 10 mW intensity of laser treatment significantly decreased the tissue MPO activity on the 7th and 10th post operative day. These data demonstrated that only 10 mW intensity of laser treatment successfully suppressed tissue inflammatory reaction after wound induction. In conclusion, these findings suggested that 10 mW of GaAIAs laser treatments effectively suppressed the inflammatory reaction of tissue that was induced during the wound healing process.

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가토 하악골 절단부의 저수준 레이저 처치가 골치유에 미치는 영향 (BONE HEALING CAPACITY IN THE FRACTURE OF RABBIT MANDIBULAR BONE USING LOW-LEVEL LASER)

  • 배용현;한세진;김경욱
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • 제35권2호
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    • pp.120-124
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    • 2009
  • The concept of biostimulation of wounds by low-level laser therapy(LLLT) is attracting considerable attention. Although its effect on whole tissues has been studied quite extensively, the biological and cellular mechanisms underlying LLLT have not been clarified. In an experimental radius fracture in rabbits, Tang and Chai reported that LLLT enhanced the activity of red blood cells, macrophages, fibroblasts, chondrocytes, and osteoclasts within the fracture area. The purpose of the present study was to evaluate the effect of LLLT with a GaAlAs diode laser device on bone healing in rabbit mandibular fractures. We use 12 rabbits for this study. All rabbits were fractured mandible angle area using saw in anesthetic condition. In control group(n=6), none treatment was performed at fracture site. In experimental group(n=6), LLLT with a GaAlAs diode laser was radiated at fracture site daily for 7 days. All rabbits were sacrificed at 6 weeks later from performed fracture day. We studied the immunohistochemical staining of CD34 and Vimentin and the histochemical analysis for calcium and phosphorus content. The results were as follows. 1. In the histological and immunohistological staining, after 6week, fibroblasts, osteogenic cells and collgen fibers were observed more in experimental group than in control group. 2. In the histochemical analysis, the amount of calcium and phosphorus contents of the experimental group were more than the control group. From the results obtained, we suggest that the bone healing is stimulated by low-level laser irradiation in bone fractures.

경사형 굴절도파구조를 갖는 레이저 다이오드의 호울 버닝 효과 (The effect of hold burning of graded-index-guide structure laser diode)

  • 오환술
    • E2M - 전기 전자와 첨단 소재
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    • 제1권2호
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    • pp.109-114
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    • 1988
  • AlGaAs/GaAs 이종접합구조 레이저 다이오드의 활성층 두께를 변화시킬때 스트라이프폭과 광출력에 미치는 영향을 해석하였다. 안정된 단일발진 도파모우드를 위해서는 R>O되어야 함을 밝혔다. 고출력에서 캐리어분포와 이득분포에 대해 공간적 호울버닝 현상이 일어났고 이는 출력을 고정시키고 스트라이프폭만을 찬넬폭보다 크게 하여도 발생하였다.

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다층 구조에 대한 새로운 strain 해석 모델 (A new strain analysis model in epitaxial multilayer system)

  • 장동현;심종인
    • 한국광학회:학술대회논문집
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    • 한국광학회 2007년도 하계학술발표회 논문집
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    • pp.237-238
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    • 2007
  • A new strain analysis model, so called the stress matched model, in an epitaxial multilayer system is proposed. The model makes it possible to know the strain, the stress, the elastic strain energy in each epitaxial layer. Analytical formulas of strain parameters in each epitaxial layer are derived under assumptions that the substrate thickness is finite and the in-plane lattice constant is the same for all epitaxial layers for dislocation free growth. As an example, the model is applied to a 405nm InGaN/InGaN multiple quantum well laser diode. Analysis result shows that AlxGa1-xN layer with Al mole fraction of 0.06 and the thickness of 6${\mu}m$ is one of good templates for a laser. In fact, this layer structure coincides with experimentally optimized one.

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Optimum thickness of GaAs top layer in AlGaAs-based 850 nm VCSELs for 56 Gb/s PAM-4 applications

  • Yu, Shin-Wook;Kim, Sang-Bae
    • ETRI Journal
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    • 제43권5호
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    • pp.923-931
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    • 2021
  • We studied the influence of GaAs top-layer thickness on the small-signal modulation response and 56 Gb/s four-level pulse-amplitude modulation eye quality of 850 nm vertical-cavity surface-emitting lasers (VCSELs). We considered the proportionality of the gain-saturation coefficient to the photon lifetime. The simulation results that employed the transfer-matrix method and laser rate equations led to the conclusion that the proportionality should be considered for proper explanation of the experimental results. From the obtained optical eyes, we could determine an optimum thickness of the GaAs top layer that rendered the best eye quality of VCSEL. We also compared two results: one result with a fixed gain-saturation coefficient and the other that considered the proportionality. The former result with the constant gain-saturation coefficient demonstrated a better eye quality and a wider optimum range of the GaAs top-layer thickness because the resultant higher damping reduced the relaxation oscillation.