• Journal of Information Display
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• v.9 no.3
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.108-112
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• 2010

Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about $1.8'10^{-4}Wcm$ which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.93-97
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• 1990

Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/$CsNO_3$ aqueous electrolyte interfaces were qualitatively analyzed in terms of their cyclic current-voltage characteristics. The current-voltage characteristic curves, the ion adsorption and potential barrier processes at the semiconductor interfaces were verified using continuous cyclic voltammetric methods. The pn or np junction structures and the related rectifying types at the doped semi-condudtor-electrolyte inferfaces are determined by the space charges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.44-47
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• 1997

In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.80-80
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• 1993

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.175-175
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• 2009

AZO, GZO, ZIO 박막은 DC 마그네트론 법으로 각각의 소결체 타겟을 사용하여 유리 기판위에 증착되었다. 상온에서 증착된 GZO 박막의 경우 $1.61{\times}10^{-3}{\Omega}cm$ 의 가장 낮은 비저항을 나타내었다. 전기적 특성을 향상시키기 위하여 기판온도를 상승하였을 때 역시 GZO 박막이 가장 낮은 $6.413{\times}10^{-4}{\Omega}cm$ 을 나타내었다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.247-247
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.584-588
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• 2011

The ZnO thin films doped with Ga and Ge (GZO:Ge) were prepared on glass substrate using RF sputtering system. Structural, morphological and optical properties of the films deposited in different temperatures were studied. Proportion of the element of using target was 97 wt% ZnO, 2.5 wt% Ga and 0.5 wt% Ge with 99.99% highly purity. Structural properties of the samples deposited in different temperatures with 200 w RF power were investigated by field emission scanning electron microscopy, FE-SEM images and x-ray diffraction XRD analysis. Atomic force microscopy, AFM images were able to show the grain scales and surface roughness of each film rather clearly than SEM images. it was showed that increasing temperature have better surface smoothness by FE-SEM and AFM images. Transmittance study using UV-Vis spectrometer showed that all the samples have highly transparent in visible region (300~800 nm). In addition, it can be able to calculate bandgap energy from absorbance data obtained with transmittance. The hall resistivity, mobility, and optical band gap energy are influenced by the temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.5
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• pp.50-55
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• 1983

A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.43-48
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• 2004

Undoped and $Co^{2+}$-doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$. and $CaIn_2Se_4$ single crystals were grown by using the chemical transport reaction method The temperature dependence of the optical energy gap was well fitted by the Varshni equation. In the Co2+ - doped $CaGa_2S_4$, $CaGa_2Se_4$, $CaIn_2S_4$, and $CaIn_2Se_4$ single crystals, two groups of impurity optical absorption peaks due to Co2+ sited in a Td symmetry were observed in the wavelength regions of 600 900 nm and 1350 1950 nm at 11 K.耀