• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• 한국가시화정보학회:학술대회논문집
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• 2003.11a
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• pp.43-44
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• 2003

A 4D-PTV system was constructed. The measurement system consists of three high-speed high-definition cameras, Nd-Yag laser and a host computer. The GA-3D-PTV algorithm was used for completing the measurement system. A horizontal impinged jet flow was measured. The Reynolds number is about 40,000. Spatial temporal evolution of the jet flow was examined and physical properties such as spatial distributions of vorticity and turbulent kinetic energy were obtained with the constructed system.

• 한국가시화정보학회:학술대회논문집
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• 2004.12a
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• pp.33-40
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• 2004

A 4D-PTV system was constructed. The measurement system consists of three high-speed high-definition cameras(1k x 1k, 2000fps), Nd-Yag laser(2000Hz) and a host computer. The GA-3D-PTV algorithm was used for completing the measurement system. The 4D-PTV is capable of probing the spatial distribution of velocity vectors of the flow field overcoming the temporal resolution of the characteristic turbulence length scales of the measured flow fields. A horizontal impinged jet flow (H/D=7) was measured. The Reynolds number is about 33,000. Spatial temporal evolution of the jet flow was examined and physical properties such as spatial distributions of vorticity and turbulent kinetic energy were obtained with the constructed.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1767-1771
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• 2004

A 4D-PTV system was constructed. The measurement system consists of three high-speed high-definition cameras, Nd-Yag laser(10mJ, 2000fps) and a host computer. The GA-3D-PTV algorithm was used to extract three-dimensional velocity vectors in the measurement volume. A horizontal impinged jet flow was measured with the constructed system. The Reynolds number is about 40,000. Spatial temporal evolution of the jet flow was examined in detail and physical properties such as spatial distributions of vorticity and turbulent kinetic energy were obtained with the constructed system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.29-34
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• 2004

We present the first demonstration of waveguide-type depleted optical thyristor laser diode with InGaAs/InGaAsP multiple quantum well structure. The measured switching voltage and current are 4.63 V and 10uA respectively. The holding voltage and current are respectively 0.59 V, 20uA. The lasing threshold current at the temperature of $25^{\circ}C$ and $10^{\circ}C$ are 111 mAA and 72.5 mA, respectively. The lasing wavelength is centered at 1.561um at a bias current equal to 1.41 times threshold.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.105.2-105.2
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.1-1
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• 2001

Microlasers grown on a chip without any distributed Brags reflectors to provide the feedback are potentially useful for integrated optics, particularly if the laser emission in the plane is unidirectional and this direction can be switched. Microfilters performing as add/drop devices and bandpass units are now considered the most needed optical element for the DWDM field. The talk will concentrate on our research effort in GaN microlasers with non-circular shapes and in dielectric microfilters with oval and square shapes. (omitted)

• Journal of the Optical Society of Korea
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• v.9 no.3
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• pp.103-106
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• 2005

Recently, polymethyl methacrylate based plastic optical fibers (POFs) have attracted considerable attention as a potential medium for local area network (LAN) and home network applications. Since the POFs have very low optical loss at around 650mm, in particular, it becomes quite important to develop GHz transmitters operating at this wavelength for high bit rate optical transmission applications of the POFs. In this paper, we present generation of ${\geq}1.5 Gbps$ pseudo-random binary sequence optical signals by using a gain switched InGaA1P Fabry-Perot semiconductor laser with a high frequency filter, operating at 650mm, and the application of these signals to bandwidth measurement of POFs.

• Transactions of Materials Processing
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• v.17 no.5
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• pp.322-327
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• 2008

LGP is a key component of LCD back light unit because it determines brightness and sharpness of the display image. Usually, it has optical patterns fabricated on the bottom surface. These optical patterns convert point or line sources placed in the side of LGP to plane source at the top surface by changing the propagating direction of the incident light. In the present paper the LiGA-reflow method was applied to fabricate the LGP mold. Furthermore, the optical simulation considering the replication ratio of pattern height was applied to the pattern design. The optical simulation through systematic correction scheme was adopted to find the optimum distribution of pattern density. Finally, the stamper fabricated by this method was installed in the mold and LGP was produced by injection molding. As a result of luminance measurement for the final product, the average luminance and luminance uniformity was measured 3,180 nit and 84%, respectively. Consequently, the mold fabrication method using the LiGA-reflow and optical simulation(CAE) can save the expense and time compared with the existing fabrication methods(laser ablation and chemical etching).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.269-272
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• 2008

LGP is a key component of LCD back light unit because it determines the brightness and sharpness of display image. Usually, it has optical patterns fabricated on the bottom surface. In the present paper the LiGA-reflow method was applied to fabricate the LGP mold. Furthermore, the optical simulation considering the replication ratio of pattern height was applied to the pattern design. The optical simulation through systematic correction scheme helped find the optimum distribution of pattern density. Finally, the stamper fabricated by this method was installed in the mold and LGP was produced by injection molding. As a result of luminance measurement for the final product, the average luminance and luminance uniformity was measured 3,180 nit and 84%, respectively. Consequently, the mold fabrication method using the LiGA-reflow and optical simulation(CAE) can save the expense and time compared with the existing fabrication methods(laser ablation and chemical etching).