• 한국광학회지
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• 제14권3호
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• pp.279-285
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• 2003

InGaAsP/InP 비대치 다중 양자우물 구조에서 모드 이득의 이론 및 실험적 해석을 통해 광대역 이득특성을 확인하였고, 여러가지 선폭증가 함수를 적용하여 비대칭 선폭증가 함수가 가장 실험치에 근접한 모델임을 확인하였다. 광대역 이득 대역폭을 얻기 위한 활성층 구조를 설계하여 RWG형 FP-LD를 제작하였고, 공진기 길이가 400 $\mu\textrm{m}$에서 발진개시 전류는 36 ㎃, 주입전류가 33 ㎃에서 -1 ㏈ 이득폭은 45 nm, -3 ㏈ 폭은 80 nm을 얻을 수 있었다.

• Journal of Oral Medicine and Pain
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• 제12권1호
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• pp.17-26
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• 1987

In order to investigate the biostimulatory effect of low power density laser radiation in vitro, human gingival fibroblasts were cultured in MEM in which experiment groups respectively were made to 30 sec, 60 sec and 90 sec group. The experiments were performed by cell count, DNA and protein content measurements after experimental groups were irradiated with GaAlAs laser every day by forth day and then control group and experimental groups were compared. The results were as follows: 1. Cell counts of experimental groups were increased with exposure time, but showed no significance (P>0.05). 2. When the protein contents were compared, there was a very significant increase in 90 sec. experimental group (P<0.01). 3. When the DNA contents were compared, there was a significant difference only between control and 70 sec. group (P<0.05).

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.833-837
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• 2003

The spectral and temporal characteristics of a V-groove AIGaAs-GaAs quantum wire (QWR) laser were investigated with varying the cavity length. At cavity lengths shorter than 300 ${\mu}{\textrm}{m}$, a discrete shift in tile wavelength occurred from the n=1 to the n=2 subband due to the increased cavity losses. Utilizing this characteristic, ultrafast lasing characteristics at each subband were investigated by tile gain switching method.

• 대한금속재료학회지
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• 제48권5호
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• The Korean Journal of Pain
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• 제4권1호
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• pp.51-55
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• 1991

There is a variety of therapeutic modality for herniated nucleus pulposus. Recently the low level laser has come into use for treatment for it. We treated two patients suffered from herniated nucleus pulposus of the central type of $L_{3,4}$ level, with He-Ne, $CO_2$ and Ga Al As laser simultaneously daily under hospitalization. In order to determine the efficacy of treatment, we used the "visual analogue scale" and its improvement rate. The results were as follows; Case I complained of gait disturbance, and hypoesthesia on the lateral side of the left lower leg, as and as low back pain. At the 15th day after treatment, VAS improvement rate was 40%, and the gait disturbance and hypoesthesia were markedly improved. 35th days after tratement, VAS improvement rate was 80%. Case II complained only of low back pain. At the 15th day after treatment, the VAS improvement rate was 68%, and at 20 days after treatment it was 84%. We sugsest that, using the low level laser for treatment of herniated nucleus pulposus increased the cartilage entrophism, and inhibitory effects of the inflammatory materials such as acid glycosaminoglycan by its anti-inflammatory and analgesic effects.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.236.1-236.1
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• 2014

Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.220-222
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• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• Applied Microscopy
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• 제41권2호
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• pp.89-98
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• 2011

Atom Probe Tomography는 원자 수준의 분해능으로 원소의 위치 및 조성 정보를 3차원으로 제공해 주는 분석 장비이다. APT의 우수한 성능에도 불구하고 반도체 등, 저전도성 물질 분석에는 그 동안 적용이 어려웠다. 그러나 특정 시료 내 위치의 시편을 가공할 수 있는 FIB 시편 제조법과 laser펄스를 이용한 전계증발법의 개발로 APT의 분석 영역이 반도체에서 절연체까지 크게 확대 되고 있다. 본 논문에서는 최근에 적용되기 시작한 MOS-FET, GaN LED, Si-Nanowire 등 전자소자에서의 APT분석 응용사례에 대하여 살펴보았다.

• Journal of Periodontal and Implant Science
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• 제52권1호
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• pp.39-53
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• 2022

Purpose: This study evaluated the systemic and local effects of doxycycline (DOX) and low-intensity laser (LIL) treatment as adjuvants to scaling and root planing (SRP) in the treatment of experimental periodontitis in rats. Methods: The sample consisted of 180 male rats (Rattus norvegicus albinus, Wistar), of which 30 did not receive induction of periodontal disease (negative control [NC] group) and 150 received induction of periodontal disease in the lower first molar. After 7 days, the ligature was removed, and the animals were divided into the following groups: NT (no treatment), SRP (SRP), DOX (SRP and DOX irrigation), LIL (SRP and laser irradiation), and DOX+LIL (SRP, DOX, and LIL). The animals were euthanized at 7, 15, and 30 days; thereafter, biochemical, radiographic, histological, and immunohistochemical analyses were performed. Results: In the intragroup analysis, lower concentrations of α-1-glycoprotein acid (α-1-Ga) and complement 3 (C3) were observed in the DOX+LIL group than in all other groups at all time points, as well as lower levels of complement 4 (C4) at 15 and 30 days (P<0.001). Less bone loss was observed in the DOX, LIL, and DOX+LIL groups than in the NC and SRP groups at all time points (P<0.001). There was a smaller number of tartrate-resistant acid phosphatase (TRAP)-positive cells in the DOX+LIL group than in the other groups at all time points (P<0.001). Positive correlations were observed between the systemic levels of α-1-Ga, C3, and C4 and the number of TRAP-positive cells. Conclusions: The combination of DOX with LIL as SRP adjuvants was effective both systemically and locally for the treatment of experimental periodontitis in rats.