Theoretical and experimental analysis of modal gain in asymmetric multiple quantum well laser diodes
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(한국전자통신연구원 반도체 광통신소자 연구부)
김강호 (한국전자통신연구원 반도체 광통신소자 연구부) 김현수 (한국전자통신연구원 반도체 광통신소자 연구부) 김종회 (한국전자통신연구원 반도체 광통신소자 연구부) 오광룡 (한국전자통신연구원 반도체 광통신소자 연구부) |
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2 | G. Hunziker, W. Knop, and C. Harder, “Gain measurement on one, two, and three strained GaInP quantum well laser diodes,” IEEE J. Quantum Electron., vol. 30, no. 10, pp. 2235-2238, 1994. DOI ScienceOn |
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Quantum well lasers-gain, spectra, dynamics
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External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range
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Density-matrix theory of semi-conductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers
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An approximate k(p theory for optical gain of strained InGaAsP quantum-well lasers
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Gain measurement on one, two, and three strained GaInP quantum well laser diodes
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Broadband tunablity of gain-flattened quantum well semiconductor lasers with an external grating
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The weighted index method : a new techniques for analyzing planar optical waveguides
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1.3㎛ quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study
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Theory of Non-Markovian gain in strained-layer quantum-well lasers with many-body effects
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Phase dampings of optical dipole moments and gain spectra in semiconductor lasers
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Intraband relaxation time in quantum-well lasers
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14 |
Variational calculation of polarization of quantum well photoluminescence
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1.4㎛ InGaAsP-InP Strained multiple-quantum-well laser for broad-wave-length tunability
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Effect of barrier height on the uneven carrier distribution in asymmetric multiple quantum-well InGaAsP lasers
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Theory and experiment of In1-xGaxAsyP1-y and In1-x-yGaxAlyAs long-wavelength strained quantum-well lasers
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External cavity semi-conductor laser tunable from 1.3 to 1.54㎛ for optical communication
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