• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.423-423
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• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.6-10
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• 2001

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.797-802
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• 2023

We prepared GZO (Ga₂O₃ : 5 wt %, ZnO : 95 wt %) thin film on glass substrate according to the substrate temperature using the pulsed laser deposition method and investigated electrical and optical properties of the thin film. Through the XRD measurements, their were confirmed that all GZO thin films grew preferentially in c-axis and the GZO thin film deposited at 300℃ showed the best crystallinity with a FWHM of 0.38°. As the substrate temperature increased from 150 to 300℃, the resistivity of GZO thin film tend to decrease, while the average transmittance in the visible light region was not significantly affected. The figure of merit of the GZO thin film deposited at 300℃ was 2.05×10⁴ Ω^-1·cm^-1, which was the best value, the resistivity and the average transmittance in the visible light region were 3.72 × 10^-4 Ω·cm and 87.71 %, respectively. In this study, it was found that GZO thin film is very promising material for transparent conducting thin film.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.260-260
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• 2011

투명 비정질 산화물반도체는 디스플레이의 구동소자인 박막 트랜지스터에 채널층으로 사용된다. 또한 투명하면서 유연성이 있는 소자를 저비용으로 제작할 수 있는 장점을 가진다. 투명 산화물반도체 재료 중 IGZO는 Si 또는 GaAs와 같은 공유결합성 반도체와는 다른 전자 배치로 전도대가 금속이온의 ns 궤도에서 형성되며, 가전도대가 산소 음이온의 2p 궤도에서 형성된다. 특히 큰 반경의 금속 양이온은 인접한 양이온과 궤도 겹침이 크게 발생하게 되며 캐리어의 효과적인 이동 경로를 제공해줌으로써 다른 비정질 반도체와는 다르게 높은 전하이동도(~10 $cm^2$/Vs)를 가진다. 따라서 저온공정에서 우수한 성능의 TFT소자를 제작할 수 있는 장점이 있다. 본 연구에서는 TFT 채널층으로 사용하기 위한 a-IGZO박막의 산소분압에 따른 특성변화를 분석 하였다. a-IGZO박막은 Pulsed Laser Deposition (PLD)를 이용하여 산소분압(20~200 mTorr) 변화에 따라 Glass기판에 증착하였다. 증착된 a-IGZO 박막의 구조적 특성으로는 X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), 광학적 특성은 UV-vis spectroscopy 분석을 통해서 알아보았다. TFT 채널층의 조건으로는 낮은 off-current, 높은 on-off ratio를 위해 고저항 ($10^3\;{\Omega}cm$)의 진성반도체 성질과 source/drain금속과의 낮은 접촉저항(ohmic contact) 등의 전기적 성질이 필요하다. 따라서 이러한 전기적 특성확인을 위해 transmission line method (TLM)을 사용하여 접촉저항과 비저항을 측정하였고, 채널층으로 적합한 분압조건을 확인해볼 수 있었다.

• Composites Research
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• v.24 no.6
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• pp.12-17
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• 2011

Interfacial durability and electrical properties of CNT or ITO coated PVDF nanocomposites were investigated for self-sensor and micro actuator applications. Electrical resistivity of nanocomposites for the durability on interfacial adhesion was measured using four points method via fatigue test under cyclic loading. CNT/PVDF nanocomposite exhibited lower electrical resistivity and good self-sensing performance due to inherent electrical property. Durability on the interfacial adhesion was good for both CNT and ITO/PVDF nanocomposites. With static contact angle measurement, surface energy, work of adhesion, and spreading coefficient between either CNT or ITO and PVDF were obtained to verify the correlation with interfacial adhesion durability. The optimum actuation performance of CNT or ITO coated PVDF specimen was measured by the displacement change using laser displacement sensor with changing frequency and voltage. The displacement of actuated nanocomposites decreased with increasing frequency, whereas the displacement increased with voltage increment. Due to nanostructure and inherent electrical properties, CNT/PVDF nanocomposite exhibited better performance as self-sensor and micro actuator than ITO/PVDF case.

• Journal of Oral Medicine and Pain
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• v.25 no.3
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• pp.331-343
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• 2000

구강안면통증환자에서 저출력 레이저의 임상 효과는 많은 임상가에 의해 연구되었으나 그 결과에 대해서는 아직도 논란중이다. 이에 본 연구는 두 가지 방법으로 시행하여 구강안면부위의 발통점에 대한 저출력 레이저의 효과를 평가하였다. 첫 번째 방법은 저작근 중 교근, 측두근과 경부근육 중 승모근에 발통점을 가진 부산대학교 치과대학생 69명중 37명은 레이저 조사군, 32명은 레이저 모의 조사군으로 무작위로 분류하여 저출력 레이저의 치료효과를 평가하였다. 둘째 방법으로 동일 근육에 발통점이 있는 19명의 환자와 발통점이 전혀 없는 20명의 정상인을 무작위로 환자군과 정상 대조군으로 분류하고, 각 군을 다시 레이저 조사군과 모의 조사군으로 나누어 실제 저출력 레이저의 치료효과와 위약효과를 평가하였다. 50mW, 820nm의 GaAlAs 반도체 레이저를 이용하여 4주 동안 첫 주는 2회, 이후 3주 동안 각 1회씩 총 5회를 조사하였고, 레이저 모의 조사군에서도 동일한 방법으로 시행하였다. 치료반응은 전자통각계를 이용하여 압력통각역치를 치료 전, 치료 2주 및 4주에 측정하여 이를 비교한 바 다음과 같은 결과를 얻었다. 1. 레이저 조사군의 각 근육에서 측정한 압력통각역치는 치료 2주 후부터 유의하게 높아졌으며(P<0.05), 모의 조사군과의 차이는 이후 점점 더 증가하였다(P<0.001). 모의 조사군에서는 압력통각역치의 유의한 변화가 없었다. 2. 레이저 조사-환자군에서 측정한 압력통각역치는 레이저 모의조사-환자군의 압력통각역치보다 그 증가폭이 더 크게 나타났다(P<0.05). 정상 대조군은 레이저 조사와 관계없이 압력통각역치에 유의성이 없었다. 3. 약간의 위약 반응이 레이저 모의조사 환자군과 정상 대조군에서 관찰되나, 레이저 조사 환자군의 실제 레이저 치료효과가 위약 반응보다 우세하였다.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.

• Journal of Physiology & Pathology in Korean Medicine
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• v.16 no.1
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• pp.32-44
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• 2002

Gu-Chang is a disorder characterized by recurring ulcers confined to the oral mucosa. Despite much clinical and research attention, the causes remain poorly understood. In this paper, we will compare Gu-Chang with Recurrent Aphthous Stomatitis(RAS) in order to know what is the similiarity between Gu-Chang and RAS. So we will arrange various oriental and western medical literatures which are important. As a result of arrangement of the causes, symptoms and therapys of Gu-Chang, we can conclude through the studies as follows. 1. The etiologies of Gu-chang are following. In the Sthenia syndrome, there are evil heat of external factor, heat of heart and spleen, insomnia, heat of upper warmer, stress and diet, heat of lung and heart, excessive heat of upper warmer, inappropriate food intake, heat conveyance of organ, heat of stomach merdian, moistured heat of spleen and stomach and stasis of liver energy. In the Asthenia syndrome, there are deficiency of stomach energy, deficiency of upper warmer leading to heat, deficiency of middle warmer leading to cold, deficiency of lower warmer leading to heat, deficiency of middle energy, deficiency of blood, decreased fire and deficiency of soil, yin fire of lower warmer, deficiency of heart yin, deficiency of spleen yin and deficiency of qi and blood. 2. In western medicine the causes of RAS is presumed as local, microbial, systemic, nutritional, genetic, immunologic factors. 3. Once Gu-chang is compared with RAS, in the deficiency of yin leading to hyperactivity of fire, deficiency of yin leading to floating of fire and stasis of liver energy, recurring of Gu-chang is similar to RAS. Although recurring of Gu-chang due to tripple warmer of excessive fire has no recurrance, since there are the degree of Pain, site of lesion, dysphagia etc, it is similar to major RAS. It is may be believed that Sthenia Gu-chang is similar to major RAS, shape of recurring, site of lesion, degrree of Pain and white color of Asthenia Gu-chang are similar to minor RAS, but there is no similarity concerning herpes RAS in the literatures that describe the symptoms. 4. Generally, the treatment of Gu-chang is divided into Asthenia and Sthenia Syndrome. The method of cure to Sthenia syndrome is heat cleaning and purge fire, Asthenia syndrome is nourish yin to lower and adverse rising energy and strength the middle warmer and benefit vital energy. 5. Following is the medication for Sthenia syndrome. Heat of heart and spleen is Do Jok San, Yang Gyek San, Juk Yup Suk Go Tang, evil heat of external factor is Yang Gyek San Ga Gam, Stasis of liver energy is Chong Wi Fae Dok Yum, moistured heat of spleen and stomach is Chong Gi Sam Syep Tang. The medication for Asthenia Syndrome is following. Deficiency of upper warmer leading to heat is Bo Jung Ik Gi Tang, deficiency of middle warmer leading to cold is Bu Ja Lee Jung Tang, deficiency of lower warmer leading to heat is Yuk Mi Ji Hwang Tang, deficiency of yin leading to hyperactivity of fire is Ji Baek Ji Hwang Hwan, deficiency of yin leading to floating of fire is Lee Jung Tang Ga Bu Ja Medicine for external use were Yang Suk San, Boo Wyen San, Rok Po San, Yoo Hwa San ate. 6. In western medicine, there is no specific treatment for RAS, and management strategies depend on dinical presentation and symptoms and includes antibiotics, oral rinses, glucocorticoids, immunomodulatory drugs, vitamines, analgesics, laser and antiviral agents.