• Korean Journal of Materials Research
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• v.8 no.5
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• pp.419-423
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• 1998

The conditions for optimizing mass transport for making buried heterostructure (BH) InGaAsP/lnP lasers are discussed. The double heterostructure InGaAsP/lnP laser structures were grown by Liquid Phase Epitaxy (LPE) and etched into mesas. The active layer was selectively etched along [llO] and the mass transport was carried out in the LPE reactor to cover the sides of the active layer and form a BH structure. The threshold temperature for the appreciable mass transport is measured to be 670$670^{\circ}C$ when the holding time is set to 40 min. The width of the region re¬filled by mass transport is observed to increase as the temperature increases.

• Journal of Oral Medicine and Pain
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• v.19 no.1
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• pp.33-43
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• 1994

The purpose of this paper was to observe the influence of Ga-As semiconductor-low power generating laser on she appearance and actions of tenascin, extracellular matrix, as healing process of intentional wound on the experimental animals is taking place. 35 rabbits were divided into control and experimental group. ; and on each, 3mm-long and 2mm-deep, surgical wounds were created on buccal oral mucosa and thoracodorsal portion of skin. Ga-As laser was applied to the experimental group starting a day of the day the wounds were created , the laser was applied for 5 minutes every other day. Tissue samples were taken after the 2, 4, 7, 10, and 14 days after wound formation. Then tile healing process of experimental and control groups were observed and compared, using light microscope. Afterwards, the samples were immunohistochemical stained and again observed tenascin by quantitative measuring. The following results were obtained : 1. Tenascin was observed prevalently on epithelial cells, border area of dermis, and interstitial matrix between connective tissue layers in both experimental and control groups. 2. In oral mucosa, the experimental group showed significant increase in the appearance of tenascin after 4 days compared to the control group, but after 10 days, it decreased to a point which is even less than the control group. 3. In the skin samples, the pattern of appearance of tenascin was the same in both groups, but there was some difference concerning when the peak period was shown, In the experimental group, the peak period of tenascin expression was the 7 days after wound formation in epithelium and connective tissue. In the control group, the peak period was 10 days after. 4. In both the experimental and control groups, tenascin first appeared in the epithelium near the wound area and submucosa, and then spread on the underlying connective tissue. In conclusion, appearance of tenascin is closely related to regeneration of epithelium and development of granulation tissue : therefore, low power laser, which fastnes appearance of tenascin, is sure to faciltate healing process of oral mucosa.

• Journal of the Optical Society of Korea
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• v.11 no.3
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• pp.138-141
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• 2007

We suggest that supercontinuum can be used for absorption spectroscopy to observe the exciton levels of a semiconductor nano-structure. Exciton absorption spectrum of a GaAs/AlGaAs quantum well was observed using supercontinuum generated by a microstructrured fiber pumped by a femtosecond (fs) pulsed laser. Significantly narrower peaks were observed in the absorption spectrum from 11 K up to room temperature than photoluminescence (PL) spectrum peaks. Because supercontinuum is coherent light and can readily provide high enough intensity, this method can provide a coherent ultra-broad band light source to identify exciton levels in semiconductors, and be applicable to coherent nonlinear spectroscopy such as electromagnetically induced transparency (EIT), lasing without inversion (LWI) and coherent photon control in semiconductor quantum structures.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.52-59
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• 1997

Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.327-330
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• 2003

We present the fabrication and measured performance of a wavelength tunable Butt coupled DBR-LD. An average coupling efficiency between active layer and passive waveguide layer was measured over 85％per facet, and the average threshold current was 21 ㎃ for the waveguide integrated DBR laser. High output power of Butt coupled DBR-LD was obtained over 25 ㎽. As high as 25 ㎽ of output power was achieved by the butt coupled method. The maximum wavelength tuning range is about 7.4 nm, and the side mode suppression ratio was more than 40 ㏈ using 1.3 ${\mu}{\textrm}{m}$ InGaAsP waveguide layer.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.20-24
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• 1997

We have successfully fabricated high power (~20W) laser diode array, which are useful for pumping Nd:YAG lasers. The laser diode aray has 20 100.mu.m-wide cahnnels of which space was adjusted to 350.mu.m to improve thermal characteristics. And channel width is 100.mu.m. For an uncoated LD array, the output power of 15.66W has been obtained at 41A under quasi-CW operation, which results in about 0.42W/A slope efficiency. After aR(5%) and HR (95%) coatings on both facets, the output power was improved up to 21.18W at 40A under the same operation as above and the slope efficiency was 0.795W/A. On the other hand, by using a near field measurement system consisting of objective lens, eyepiece, CCD camera and image processing board, the typical near field patten of 1*20 LD array was observed.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.161-167
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• 2017

We have fabricated and characterized $32{\times}32$ photonic quantum ring (PQR) laser arrays uniformly operable with $0.98{\mu}A$ per ring at room temperature. The typical threshold current, threshold current density, and threshold voltage are 20 mA, $0.068A/cm^2$, and 1.38 V. The top surface emitting PQR array contains GaAs multiquantum well active regions and exhibits uniform characteristics for a chip of $1.65{\times}1.65mm^2$. The peak power wavelength is $858.8{\pm}0.35nm$, the relative intensity is $0.3{\pm}0.2$, and the linewidth is $0.2{\pm}0.07nm$. We also report the wavelength division multiplexing system experiment using angle-dependent blue shift characteristics of this laser array. This photonic quantum ring laser has angle-dependent multiple-wavelength radial emission characteristics over about 10 nm tuning range generated from array devices. The array exhibits a free space detection as far as 6 m with a function of the distance.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.110-111
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• 2007

In order to form a p-type ZnO thin film, ZnO thin film is deposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs substrate to the ZnO thin films. Photoluminescence (PL) measurement reveals that the improved qualify of ZnO thin films is acquired at the growth temperature of $400^{\circ}C$. It is ZnO film grown at $100^{\circ}C$ that shows the change from n-type to p-type by the thermal treatment. Measured carrier concentration in the film is changed from $-5.70{\times}10^{13}\;to\;9.09{\times}10^{18}$.

• The Journal of Korean Physical Therapy
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• v.14 no.4
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• pp.87-94
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• 2002

Low intensity laser irradiation is potential physical agent that triggers the muscle regeneration by previous study. In muscle regeneration, a number of growth factors also promotes that is triggered in response to muscle damage. The transforming growth factor(TGF)-$\beta$ is involved in the activation of cell proliferation and the inhibition of cell differentiation in muscle regeneration. This is secreted not only autocrine system but also paracrine and endocrine. Therefore, We investigated that effects of Gallium aluminum arsenide(GaAlAs) diode laser for the expression of TGF-$\beta$ on lumbar spinal cord after extensor digitorum muscle crush injury. After laser irradiation, the immunoreactivity of TGF-$\beta$ was increased bilaterally in gray mater of spinal cord. Especially, in 1 day, experimental group was highed than control, and in 3 day, lateral motor nucleus were storong immunoreactivy of TGF-$\beta$. Also, in 1 and 2 day, TGF-$\beta$ was showed in white mater as well as gray mater, but in 3 day, only showed in gray mater. These data may suggests to the establishment of laser irradiation on spinal cord for skeletal muscle injury.