• Journal of Acupuncture Research
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• v.26 no.1
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• pp.49-57
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• 2009

Objectives : During the past three decades there has been a significant evolution of laser acupuncture application in the nature of the clinical approach and the research of traditional medicine and laser therapy field. However, there have been no standard and guideline of laser equipment can be applied as laser acupuncture. This study aims to investigate the condition of laser equipment required as a laser acupuncture method. Methods : First, we performed literature search using the Medline(from 1999 to Oct 2008) to confirm types and ranges of laser equipments that can be applied as laser acupuncture. In addition, we investigated the characters of acupoints such as sites and depths, and compared with penetrating depths of each laser. Results : A total of 37 articles for clinical studies using laser acupuncture were selected, and 41 lasers were used. GaAs laser was used three times, GaAlAs laser 14, InGaAlP 18, HeNe laser 4, and Argon laser and CO2 laser were used one time, respectively. From all 361 points of fourteen meridians, depths of 341 points(94.5%) were 1 cun(2.3-3.2cm) or less. The mean depth of all points was 0.48 cun(1.1-1.5cm). Hence, it appeared that the majority of therapeutic lasers satisfied with the condition. HeNe, InGaAlP, GaAlAs, GaAs lasers are recommended for laser acupuncture, however, it may plausible that other surgical lasers could be used as the laser acupuncture, because it have the biostimulation effect to some extent, too. Conclusions : It is suggested that to select appropriate laser type and give the adequate output power to reach the acupoints under the skin using laser acupuncture. Further evaluation and research for the condition of laser acupuncture are warranted.

• Journal of the Korean Society of Physical Medicine
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• v.9 no.4
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• pp.433-438
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• 2014

PURPOSE: The purpose of our study was to compare a 975-nm, 500-mW GaAlAs low-level laser therapy versus placebo low-level laser therapy with regard to the immediate changes on the myofascial trigger point of the dominant upper trapezius muscle in subjects with rounded shoulder posture. METHODS: Thirty-two male college students with rounded shoulder posture and shoulder pain consented to participate in the experiment. The subjects were randomly assigned to a 2-minute procedure with either an active GaAlAs low-level laser or a placebo GaAlAs low-level laser. The pressure-pain threshold and visual analog scale on tenderness at 3 kg were measured with an algometer before and after the laser treatments. RESULTS: The active GaAlAs low-level laser group showed significant changes in pressure-pain threshold and visual analog scale on tenderness at 3 kg (p<0.05). The placebo GaAlAs low-level laser group showed no significant changes in either pressure-pain threshold or visual analog scale on tenderness at 3 kg (p>0.05). CONCLUSION: An immediate effect was observed in pressure-pain threshold and visual analog scale on tenderness at 3 kg following a 2-minute application ($857.14J/cm^2$) of a 975-nm, 500-mW GaAlAs low-level laser to the myofascial trigger point of the dominant upper trapezius muscle in patients with rounded shoulder posture.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.79-82
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• 1989

We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

• Journal of Veterinary Clinics
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• v.19 no.3
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• pp.316-321
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• 2002

The purpose of this study was to examine the effect of Ga-As(Gallium-Arsenide, wave length; 904 nm) infrared laser irradiation on healing of the experimentally crush injured rat sciatic nerves. The bilateral sciatic nerves of 43 adult male Sprague-Dawley rats were compressed surgically with a straight hemostat (1 mm width). The right legs of all the rats were irradiated using a 27 mW Ga-As infrared laser (laser irradiated group). The radiation procedure was administered for 3 minutes every day for 1, 3, 5, and 7 weeks in each group. Left legs were not irradiated and served as the control group. The numbers of total myelinated axon and degenerated myelin in the sciatic nerves of bilateral legs were measured and analyzed with mage analysis system in order to make a morphological analysis of the effect of the Ga-As infrared laser on injured nerves. Total number of myelinated axons was increased with time interval, especially in the 1, 3. and 5 week of irradiated group. Conversely, the number of degenerated myelin was decreased with time interval, especially in the irradiated group. The effects in the irradiated group were more pronounced than those of the control group. In conclusion, the Ga-As infrared laser irradiation is a useful adjuvant therapy to the regeneration of the peripheral nerve injury.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.131-138
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• 2011

We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

• The Journal of Korean Physical Therapy
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• v.14 no.2
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• pp.234-249
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• 2002

This study was performed, using c-fos and Substance P, to investigate the effect of GaAlAs laser on acute pain model induced by wound in lumbar region's spinal level. The test group was divided into control and experimental group. Control group is shamed group(c-fos and substance P expression after non-irradiation by a GaAlAs laser), The experimental group was divided into two subgroups: one is experimental group I (c-fos expression after irradiation by a GaAlAs laser), and the other is experimental group II (substance P expression after irradiation by a GaAlAs laser). The results of this study were as following: 1. The numbers of c-fos immunoreactive neuron in spinal cord was increased markedly 1 day after wound, and decreased gradually from 1 day to 2 days in wound with GaAlAs laser irradiation. 2. The changes of the average percentages of substance P immunoreactive neurons in spinal cord was increased markedly 1 day after wound, and decreased gradually from 1 day to 2 days in wound with GaAlAs laser irradiation. Therefore, decreasing the changes of c-fos and substance P expression after irradiation by a GaAlAs laser indicates and GaAlAs laser have effect on pain control.

• Journal of Korean Physical Therapy Science
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• v.7 no.2
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• pp.533-543
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• 2000

This study was designed to evaluate the analgesic effect of low power GaAsAl laser on the pain threshold of mechanical stimulation using different treatment points, acupuncture point (zusanli) and non-acupuncture points(back). Furthermore, we investigated the analgesic effect of low power GaAsAl laser using the different duration and intensity of laser in mechanical stimulation induced pain behavior. The results were summarized as follows: 1. The threshold of mechanical stimulation was significantly increased by GaAsAl laser stimulation into zusanli point after 15 and 30 min after laser stimulation(P<05). However, the laser stimulation into non-acupoint did not affect the pain threshold of mechanical stimulation. with dose dependent manner. 2. In order to investigate the analgesic effects of BV depending upon different intensities of laser stimulation, the experimental animals were divided into three groups: 3 mW treated group, 6 mW treated group and 10 mW treated group. The low power GaAsAl laser stimulation was applied into zusanli acupoint for 30 min with different intensity of laser stimulation. Six and ten mW of laser stimulation significantly increased the pain threshold of mechanical stimulation at 15 min after laser stimulation as compared to that of control group(P<.05). Moreover, the analgesic effect of 10 mW laser stimulation was maintained for 30 min after laser stimulation (P<.05). 3. Finally, we tested the analgesic effect of 10 mW laser stimulation using different duration such as 10 min, 30 min or 1 hr after application of mechanical stimulation. In 30 min treatment group, the pain threshold of mechanical stimulation was increased at 15min and 30min after laser stimulation(P<.05). However, laser stimulation for 60 min dramatically increased the pain threshold of mechanical stimulation at 0 min after laser stimulation and the analgesic effect of laser stimulation was observed until 1 hr after laser stimulation. In conclusion, these data apparently demonstrate that low power GaAsAl laser has analgesic effect on mechanical induced pain model in rats. In addition, the treated point, intensity and duration of laser stimulation should be concerned before clinical application for pain management purpose.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2004.10a
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• pp.95-101
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• 2004