• Proceedings of the Korea Contents Association Conference
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• 2014.11a
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• pp.109-110
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• 2014

오늘날 스토리텔링은 기업의 비즈니스 분야까지 확산되어 기업의 홍보, 상품의 마케팅 또는 커뮤니케이션 분야 등에 다양하게 활용되고 있다. 본 연구에서는 지식재산의 일종인 특허와 관련된 영역에서 스토리텔링을 융합한 특허 기반의 스토리텔링의 모델을 새롭게 정립하고, 특허를 중심으로 스토리의 원천 소스 발굴과 스토리텔링의 활용이라는 두 가지 관점에서 기존의 스토리텔링과 어떻게 다른지 살펴보았다. 비즈니스에서는 특허 기술의 발명에서부터 특허권리의 등록, 무효소송과 침해소송 및 손해배상 소송 등의 법적분쟁, 특허를 이용한 상품화, 홍보 및 마케팅 등의 다양한 과정이 존재한다. 각각의 과정별로 특허와 관련된 갖가지 스토리의 원천이 다양하게 존재할 수 있고 설득하고자 하는 대상과 목적에 따라 스토리텔링을 다양하게 활용할 수 있다. 이러한 관점에서 MSMU(Multi-Source Multi-Use)의 특징을 가지는 특허 기반의 스토리텔링의 모델을 새롭게 정립하였고, 스토리텔링을 특허를 포함하여 지식재산 영역으로 확장할 수 있는 가능성을 제시하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.175-175
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• 2013

염료감응형 태양전지(Dye Sensitized Solar Cells; DSSC)에서 투명전극(Transparent Conducting Oxide; TCO)으로 사용되는 ITO, FTO의 경우 자원의 희소성과 고온에 취약하며 취성과 같은 단점 등이 있다. Graphene은 단원자층의 얇은 물질로써 우수한 전도도와 투과도, 고강도와 고탄성의 특성들을 가진다. 이러한 특성들을 가지는 Graphene을 기존의 투명전극을 대체하여 DSSC의 작업전극에 적용 하였다. 본 실험에서 사용된 그래핀 시트는 근적외선을 source로 하는 RTA (Rapid Thermal Annealing)장비에 탄화수소 기반의 gas를 주입하여 Ni위에 성장시켰으며, 습식방법인 용액Etching 방식을 사용하여 유리판 위에 전사시켰다. 전사된 Graphene 투명전극의 전기적 특성과 광학적 특성을 평가하기 위해 4 point probe, FT-IR, 마이크로 Raman분광법, 광학현미경 및 투과도를 측정하여 평가 하였다. 전사된 Graphene 투명전극을 염료감응형 태양전지 작업전극에 적용하여, DSSC소자를 제작하고, Solar Simulator로 광전변환효율 및 EIS(Electrochemical Impedance Spectroscopy)를 측정하여 기존의 FTO로 만든 DSSC와 비교하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1118-1121
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• 2009

We have fabricated inverted staggered pentacene Thin Film Transistor (TFT) with 1-${\mu}m$ channel length by micro contact printing (${\mu}$-CP) method. Patterning of micro-scale source/drain electrodes without etching was successfully achieved using silver nano particle ink, Polydimethylsiloxane (PDMS) stamp and FC-150 flip chip aligner-bonder. Sheet resistance of the printed Ag nano particle films were effectively reduced by two step annealing at $180^{\circ}C$.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.3
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• pp.361-367
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• 2011

In this paper, it was attempted to analyze the optimal design of light emitting diode (LED), a source of back light unit (BLU). LED is beginning with commercialized red LED which is made by GaAsP compound semiconductor, and has been developed focusing on liquid crystal panel. In order to get the optimal design, optical simulation was made by analyzing luminosity shape, reflector angle, chip depth, and chip position of LED lighting. Final results show that the proposed LED characteristics were useful to increase light efficiency and it has been proven by distribution chart for actual exposed light on the light guide panel (LGP).

• Journal of international Conference on Electrical Machines and Systems
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• v.1 no.1
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• pp.77-83
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• 2012

In this paper, an optimal solution to the harmonic reduction problem in a cascaded multilevel inverter with non-equal DC sources using a genetic algorithm (GA) is presented. Switching angles are generated for different values of modulation index by the proposed algorithm, considering minimum voltage total harmonic distortion (THD) whereas selected harmonics are controlled within the allowable limits at all desired modulation indices including the point of discontinuity. Results are stored as a look-up table to be used to control the inverter for a certain operating point. The computed angles are used in a simulated circuit in Matlab\Simulink to validate the results.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2004.05a
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• pp.229-233
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• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper was carried out some experiments of the micro plasma electrode fabrications using FIB. The sputtering of FIB has one major problem that is redeposited by sputtered material including $Ga^+$ ion source. Therefore we have verified the effect of the reposition by EDX. And the optimal condition is suggested to machine the micro plasma electrode.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.2
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• pp.147-154
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• 1990

A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Source Coupled FET Logic(SCFL), Designed Multiplexer uses a time division frequency divider and two stage of singnal combining 2:1 multiplexer. The performance of the multiplexer is verified by PSPICE simulation. Designed circuit operates up to 12.5Gbit/s with a power dissipation of 192mW. These performance are more advanced than other reported multiplexer in the speed and power dissipation.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1704-1706
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• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.349-352
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• 2004

The $CdS_{1-x}Se_x$ thin films were grown on the GaAs(100) wafers by a Hot Wall Epitaxy method(HWE). The temperatures the source and the substrate temperature are $580^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of thin films was investigated by double crystal X-tay diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.5 s.170
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• pp.175-180
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• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.