• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• Journal of Satellite, Information and Communications
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• v.6 no.1
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• pp.6-11
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• 2011

In this paper presents a new approach to evaluate reliability indices of electric distribution systems using genetic Algorithm (GA). The use of reliability evaluation is an important aspect of distribution system planning and operation to adjust the reliability level of each area. In this paper, the reliability model is based on the optimal load transferring problem to minimize load generated load point outage in each sub-section. This approach is one of the most difficult procedures and become combination problems. A new approach using GA was developed for this problem. GA is a general purpose optimization technique based on principles inspired from the biological evolution using metaphors of mechanisms such as natural selection, genetic recombination and survival of the fittest. Test results for the model system with 24 nodes 29 branches are reported in the paper.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.123-130
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• 2002

[Ga]-MFI and H-ZSM-5 catalysts were synthesized under atmospheric pressure and used in the propylene aromatization. The effect of temperature on the product distribution was also investigated. The catalytic activities of the prepared catalysts were compared with the commercialized H-ZSM-5 which was converted from $NH_{4}$-ZSM-5. In the propylene aromatization, product distribution does not depend on the ratio of Si/$Ga_{2}$ with [Ga]-MFI catalyst, but depend on the ratio of Si/$Al_{2}$ with H-ZSM-5 catalyst [Ga]-MFI catalyst shows better dehydrogenation and alkylation activities than H-ZSM-5 catalyst The addition of Ga to H-ZSM-5 catalyst increases the conversion of propylene, selectivity to aromatics, and alkylation. In the propylene aromatization, the selectivity to aromatics slightly increased with increasing temperature with [Ga]-MFI catalyst, while slightly decreased with increasing temperature with H-ZSM-5 catalyst.

• Proceedings of the KIEE Conference
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• 2005.07a
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• pp.580-582
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• 2005

This paper presents a new method which applies a genetic algorithm(GA) for determining which sectionalizing switch to operate in order to solve the distribution system loss minimization re-configuration problem. The distribution system loss minimization re-configuration problem is in essence a 0-1 planning problem which means that for typical system scales the number of combinations requiring searches becomes extremely large. In order to deal with this problem, a new a roach which applies a GA was presented. Briefly, GA are a type of random number search method, however, they incorporate a multi-point search feature. Further, every point is not is not separately and respectively renewed, therefore, if parallel processing is applied, we can expect a fast solution algorithm to result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.435-447
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• 2006

This paper presents an application of the parallel Adaptive Evolutionary Algorithm (AEA) to search an optimal solution of the service restoration in electric power distribution systems, which is a discrete optimization problem. The main objective of service restoration is, when a fault or overload occurs, to restore as much load as possible by transferring the de-energized load in the out of service area via network reconfiguration to the appropriate adjacent feeders at minimum operational cost without violating operating constraints. This problem has many constraints and it is very difficult to find the optimal solution because of its numerous local minima. In this investigation, a parallel AEA was developed for the service restoration of the distribution systems. In parallel AEA, a genetic algorithm (GA) and an evolution strategy (ES) in an adaptive manner are used in order to combine the merits of two different evolutionary algorithms: the global search capability of the GA and the local search capability of the ES. In the reproduction procedure, proportions of the population by GA and ES are adaptively modulated according to the fitness. After AEA operations, the best solutions of AEA processors are transferred to the neighboring processors. For parallel computing, a PC cluster system consisting of 8 PCs was developed. Each PC employs the 2 GHz Pentium IV CPU and is connected with others through switch based fast Ethernet. To show the validity of the proposed method, the developed algorithm has been tested with a practical distribution system in Korea. From the simulation results, the proposed method found the optimal service restoration strategy. The obtained results were the same as that of the explicit exhaustive search method. Also, it is found that the proposed algorithm is efficient and robust for service restoration of distribution systems in terms of solution quality, speedup, efficiency, and computation time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.113-118
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• 2002

We developed engineering methods to control gas flow in a plasma reactor in order to achieve good etch depth uniformity for large area GaAs etching. Finite difference numerical method was found quite useful for simulation of gas flow distribution in the reactor for dry etching of GaAs. The experimental results in $BCl_3/N_2/SF_6/He$ ICP plasmas confirmed that the simulated data fitted very well with real data. It is noticed that a focus ring could help improve both gas flow and etch uniformity for 150 mm diameter GaAs plasma etch processing. The simulation results showed that optimization of clamp configuration could decrease gas flow uniformity as low as $\pm$ 1.5% on an 100 mm(4 inch) GaAs wafer and $\pm$ 3% for a 150 m(6 inch) wafer with the fixed reactor and electrode, respectively. Comparison between simulated gas flow uniformity and real etch depth distribution data concluded that control of gas flow distribution in the chamber would be significantly important in order or achieve excellent dry etch uniformity of large area GaAs wafers.

• Journal of IKEEE
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• v.24 no.4
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• pp.1167-1171
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• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• Journal of Magnetics
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• v.13 no.3
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• pp.110-113
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• 2008

In this study, heavy rare earth garnet $Tb_2Bi_1Ga_1Fe_4O_{12}$ powders were fabricated by a sol-gel and vacuum annealing process. The crystal structure was found to be single-phase garnet with a space group of Ia3d. The lattice constant $a_0$ was determined to be 12.465 ${\AA}$. From the analysis of the vibrating sample magnetometer (VSM) hysteresis loop at room temperature, the saturation magnetization and coercivity of the sample are 7.64 emu/g and 229 Oe, respectively. The N$\acute{e}$el temperature($T_N$) was determined to be 525 K. The M$\ddot{o}$ssbauer spectrum of $Tb_2Bi_1Ga_1Fe_4O_{12}$ at room temperature consists of 2 sets of 6 Lorentzians, which is the pattern of single-phase garnet. From the results of the M$\ddot{o}$ssbauer spectrum at room temperature, the absorption area ratios of Fe ions on 24d and 16a sites are 74.7% and 25.3%(approximately 3:1), respectively. These results show that all of the non-magnetic Ga atoms occupy the 16a site by a vacuum annealing process. Absorption area ratios of Fe ions are dependent not only on a sintering condition but also on the temperature of the sample. It can then be interpreted that the Ga ion distribution is dependent on the temperature of the sample. The M$\ddot{o}$ssbauer measurement was carried out in order to investigate the atomic migration in $Tb_2Bi_1Ga_1Fe_4O_{12}$.