• Journal of Magnetics
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• v.2 no.3
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• pp.96-100
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• 1997

A spin valve structure of NiO(40 nm)/Co(2 nm)/Cu(2.6 nm)/Co(x nm)/Ta(5 nm) has been investigated for the application of magnetic random access memory (MRAM). The spin valve structure exhibited very large difference in the coercivities between pinned and free layers, a relatively high GMR ratio, and a low free layer coercivity. The spin valves were prepared by sputtering and were characterized by dc 4-point probe, and VSM. The spin valves with combined free layer exhibited a maximun GMR ratio of 10.4% with a free layer coercivity of about 82 Oe. The spin valves with a single 10 nm thick a-CoNbZr free layer exhibited a GMR ratio of about 4.3% with a free layer coercivity of about 12 Oe. The GMR ratio of the spin valves increased by addition of Co between Cu and a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr. It has been confirmed that the coercivity of free layer can be decreased by increasing the thickness of a-CoNbZr layer without losing the GMR ratio substantially, which was mainly due to high resistivity of the amorphous "layers".

• Proceedings of the Korean Magnestics Society Conference
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• 1998.10a
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• pp.14-15
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• 1998

• Journal of Magnetics
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• v.13 no.1
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• pp.30-33
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• 2008

A highly sensitive, giant magnetoresistance-spin valve (GMR-SV) biosensing device with high linearity and very low hysteresis was fabricated by photolithography. The detection of magnetic nanoparticles and Fe-hemoglobin inside red blood cells using the GMR-SV biosensing device was investigated. When a sensing current of 1 mA was applied to the current electrode in the patterned active devices with an area of $2{\times}6{\mu}m^2$, the output signals were about 13.35 mV. The signal from even one drop of human blood and nanoparticles in distilled water was sufficient for their detection and analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.73-82
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• 1998

The exchange anisotropy is the unidirectional magnetic anisotropy which comes from exchange interaction between antiferromagnetic layer and ferromagnetic layer. The application of this phenomenon to MR read head and spin-valve type GMR (Giant Magnetoresistance) head has been studied extensively. In our study, we intended to apply exchange anisotropy of NiO/NiFe bilayer to spin-valve type GMR element. Above all, we studied the exchange anisotropy of NiO/NiFe bilayer, and focused especially on the effect of NiO deposition condition. And we found that Ar pressure during NiO deposition was crucial factor for the exchange anisotropy of NiO/NiFe bilayer. The lower the Ar pressure is, the better the characteristics of exhange anisotropy is. Then, we applied this optimum condition of NiO/NiFe bilayer to spin-valve type GMR element. Finally we got spin-valve type GMR element which had 3.6 % MR ratio, 16 Oe switching field, and 0.25 %/Oe sensitivity.

• Journal of Magnetics
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• v.16 no.4
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• pp.328-331
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• 2011

Here, we describe a dual spin valve structure with distinct switching fields for two pinned layers. A device with this structure has a staircase of three distinct magnetoresistive states. The multiple resistance states are achieved by controlling the exchange coupling between two ferromagnetic pinned layers and two adjacent anti-ferromagnetic pinning layers. The maximum magnetoresistance ratio is 7.9% for the current-perpendicular-to-plane and 7.2% for the current-in-plane geometries, with intermediate magnetoresistance ratios of 3.9% and 3.3%, respectively. The requirements for using this exchange-biased stack as a three-state memory device are also discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.36-37
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• 1996

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.46-47
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• 2001

• Journal of Magnetics
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• v.22 no.1
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• pp.7-13
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• 2017

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.

• Journal of Magnetics
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• v.11 no.3
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• pp.108-110
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• 2006

We successfully enhanced the performance of a spin valve by inserting an ultra-thin layer of partially oxidized Fe in the pinned and free layers. With the exchange bias field kept large, the spin valve reached a GMR of 12%, which corresponded to a 55% increase in GMR when we compared it with that of spin valves without any inserted layer. The layer of partially oxidized Fe was more effective for improving the properties of the spin valve than the layer of partially oxidized $Co_{90}Fe_{10}$. Considering all the results, we can contribute the significant improvement to the combined effect of the modified local electronic structures at the Fe impurities and theenhanced spin-dependent reflections at the $\alpha-Fe_{2}O_{3} phase in the magnetic layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.303-304
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• 2000