• Title/Summary/Keyword: GI thickness

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Properties of Friction Welding of Dissimilar Metals WCu-Cu Weld for Electrical Contact Device (전기접점용 이종금속 WCu-Cu 접합재의 마찰압점 특성)

  • An, Yong-Ho;Yun, Gi-Gap;Min, Taek-Gi;Han, Byeong-Seong
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.4
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    • pp.239-245
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    • 2000
  • A copper-tungsten sintered alloy(WCu) has been friction-welded to a tough pitch copper (Cu) in order to investigate friction weldability. The maximum tensile strength of the SWu-Cu friction welded joints had cp to 96% of those of the Cu base metal under the condition of friction time 0.6sec, friction pressure 45MPa, upset pressure 125MPa and upset time 5.0sec. And it is confirmed that the tensile strength of friction welded joints are influenced highly by upset pressure rather than friction time. And it is considered that mixed layer was formed in the Cu adjacent side to the weld interface, W particles included in mixed layer induced fracture in the Cu adjacent side to the weld interface and also, thickness of mixed layer was reduced as upset pressure increase.

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Thermal analysis of the wafers in LPCVD process (LPCVD 공정중 웨이퍼의 온도장 해석)

  • Kim, Il-Gyeong;Jeong, Min-Cheol;Yu, Seung-Il;Chae, Seung-Gi;Kim, U-Seung;Nam, Gi-Heum
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.22 no.5
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    • pp.651-660
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    • 1998
  • In the LPCVD reactor the temperature variations within the wafer load are the most important factor to maintain the thickness of the materials deposited on the surface of the wafer constant and to affect the deformation of each wafer. In this study the temporal variations of radial and axial temperature nonuniformities of each wafer in the LPCVD reactor are numerically estimated by assuming diffuse reflection. To verify the validity of the present numerical results, the present results obtained from the transient analysis are compared with those of Badgwell's work in which a steady-state condition was assumed. The main objective of this work is to determine the temporal variations of the temperature of each wafer in the LPCVD process since the wafers experience severe change in temperature in the early stage of the process.

The Electrical Properties and Resonant Frequency of Pt/Pb(Zr,Ti)$O_3$/Pt Films (Pt/Pb(Zr,Ti)$O_3$/Pt 박막의 전기적 특성과 공진주파수에 관한 연구)

  • Park, Young;Lee, Ki-Won;Jang, Dong-Uk;Park, Hyun-June;Park, Gi-Yub;Choi, Won-Seok;Song, Joon-Tae
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1552-1554
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    • 2004
  • The modeled resonant frequency and electrical properties of Pb(Zr, Ti)$O_3$ (PZT) film with various thicknesses have been investigated in film bulk acoustic wave resonators (FBARs). PZT films and Pt electrodes were fabricated by rf-magnetron sputtering. Fabrication process of electrodes and PZT were patterned by simple lift-off process and then back side of silicon was etched by 45wt% KOH. The crystal structure of PZT films with 0.5, 1 and 2 ${\mu}m$ thickness was investigated by x-ray deflection (XRD) and scanning electron microscopy (SEM). The dielectric constant and performance characteristics of PZT FBAR strongly depended on the film thickness. The resonant frequency of PZT films decreased with increasing film thickness. These sputtered PZT FBAR with simple lift-off process enable us to fabricate high Q values with resonant frequencies. (0.71 - 1.48 GHz).

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Bow Reduction in Thin Crystalline Silicon Solar Cell with Control of Rear Aluminum Layer Thickness (박형 결정질 실리콘 태양전지에서의 휨현상 감소를 위한 알루미늄층 두께 조절)

  • Baek, Tae-Hyeon;Hong, Ji-Hwa;Lim, Kee-Joe;Kang, Gi-Hwan;Kang, Min-Gu;Song, Hee-Eun
    • Journal of the Korean Solar Energy Society
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    • v.32 no.spc3
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    • pp.194-198
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    • 2012
  • Crystalline silicon solar cell remains the major player in the photovoltaic marketplace with 80% of the market, despite the development of various thin film technologies. Silicon's excellent efficiency, stability, material abundance and low toxicity have helped to maintain its position of dominance. However, the cost of silicon materials remains a major barrier to reducing the cost of silicon photovoltaics. Using the crystalline silicon wafer with thinner thickness is the promising way for cost and material reduction in the solar cell production. However, the thinner the silicon wafer is, the worse bow phenomenon is induced. The bow phenomenon is observed when two or more layers of materials with different temperature expansion coefficiencies are in contact, in this case silicon and aluminum. In this paper, the solar cells were fabricated with different thicknesses of Al layer in order to reduce the bow phenomenon. With less amount of paste applications, we observed that the bow could be reduced by up to 40% of the largest value with 120 micron thickness of the wafer even though the conversion efficiency decrease by 0.5% occurred. Since the bowed wafers lead to unacceptable yield losses during the module construction, the reduction of bow is indispensable on thin crystalline silicon solar cell. In this work, we have studied on the counterbalance between the bow and conversion efficiency and also suggest the formation of enough back surface field (BSF) with thinner Al layer application.

Optimization and improvement about DSSCs efficiency as thickness of TiO2 photoelectrode with Al back-reflector

  • Lee, Yong-Min;Hwang, Gi-Hwan;Seo, Hyeon-Jin;Choe, Hyeon-Ji;Lee, Yul-Hui;Kim, Dong-In;Nam, Sang-Hun;Bu, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.243.1-243.1
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    • 2015
  • To replace the based on silicon solar cells, the third generation solar cells, Dye-sensitized solar cells (DSSCs), is low fabrication than silicon solar cells, environmentally friendly and can be applied to various field. For this reason, the DSSCs have been continuously researched. But DSSCs have one drawback that is the low power conversion efficiency (PCE) than silicon solar cells. To solve the problem, we used the backr-eflector the Al foil that can be easily obtained from the surrounding in order to improve the efficiency of the DSSCs. Easily detachable Al foil back-reflector increases the photocurrent by enhancing the harvesting light because the discarded light is reused. It also leads to enhance the power conversion efficiency (PCE). In addition, we compared with the efficiency of the DSSCs that is applied and does not be applied with back-reflector according to the thickness of the TiO2 photoelectrode. When the back-reflector is applied to DSSCs, the photocurrent is increased. It leads to affect the efficiency. We used to solar simulator and Electrochemical Impedance Spectroscopy (EIS) to confirm the PCE and resistance. The DSSCs were also measured by External Quantum effect (EQE). At the same time, FE-SEM and XRD were used to confirm the thickness of layer and crystal structural of photoelectrode.

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Numerical Simulation on the Steel Plate Cutting Performances of Bent-Shaped Charge Holder Blasting (드로잉 가공 성형폭약용기의 강판절단성능에 관한 수치해석적 연구)

  • Min, Gyeong-Jo;Park, Hoon;Oh, Se-Wook;Park, Se-Woong;Suk, Chul-Gi;Cho, Sang-Ho
    • Explosives and Blasting
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    • v.36 no.3
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    • pp.19-28
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    • 2018
  • Locally damaged structures caused by earthquake or extraordinary external forces have been required to rapidly be dismantled because of its possibility of additional collapses. Particularly, steel frame structures were demolished by the shaped charge blasting method. Recently a research suggested a shape charge blasting technique which uses bent-shaped charge holder of copper plate and emulsion explosive charge to cut thick steel plates. This study simulated the cutting performance of the bent-shaped charge holder with considering types of explosives, thickness of copper liner and stand-off distances using LS-DYNA software. The shape charge blasting test of a 25mm thickness steel plate were used to calibrate the input parameters of the numerical models. The penetration depth and penetration width were analysed with different types of explosives, thickness of copper liner and stand-off distances.

Intracavitary Radiation Therapy for Recurrent Cystic Brain Tumors with Holmium-166-Chico : A Pilot Study

  • Ha, Eun Jin;Gwak, Ho-Shin;Rhee, Chang Hun;Youn, Sang Min;Choi, Chang-Woon;Cheon, Gi Jeong
    • Journal of Korean Neurosurgical Society
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    • v.54 no.3
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    • pp.175-182
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    • 2013
  • Objective : Intracavitary injection of beta-emitting radiation source for control of cystic tumors has been tried with a benefit of localized internal radiation. The authors treated cystic brain tumor patients with Holmium-166-chitosan complex (Ho-166-chico), composed of a beta-emitting radionuclide Holmium-166 and biodegradable chit polymer, and evaluated the safety and effective measurement for response. Methods : Twenty-two patients with recurrent cystic brain tumor and/or located in a deep or eloquent area were enrolled in this pilot study. The cyst volume and wall thickness were determined on CT or MRI to assess radiological response. The activity of Ho-166-chico injected via Ommaya reservoir was prescribed to be 10-25 Gy to the cyst wall in a depth of 4 mm. Results : There was neither complications related to systemic absorption nor leakage of Ho-166-chico in all 22 patients. But, two cases of oculomotor paresis were observed in patients with recurrent craniopharyngioma. Radiological response was seen in 14 of 20 available follow-up images (70%). Seven patients of 'evident' radiological response experienced more than 25% decrease of both cyst volume and wall thickness. Another 7 patients with 'suggestive' response showed decrease of cyst volume without definitive change of the wall thickness or vice versa. All patients with benign tumors or low grade gliomas experienced symptomatic improvement. Conclusion : Ho-166-chico intracavitary radiation therapy for cystic tumor is a safe method of palliation without serious complications. The determination of both minimal effective dosage and time interval of repeated injection through phase 1 trial could improve the results in the future.

Analysis of coupled electro-mechanical system by using a nine-node assumed strain shell element (9 절점 가정변형률 쉘 요소를 이용한 전기-기계연성 시스템 해석)

  • Lee, Sang Gi;Park, Hun Cheol;Yun, Gwang Jun;Jo, Chang Min
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.31 no.2
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    • pp.25-34
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    • 2003
  • In the present paper, formulation of a nine-node assumed strain shell element is modified and extended for analysis of actuator embedded/attached structures. The shell element can alleviate locking and has sic DOFs per node by discarding assumption of no thickness change. In modeling of the physicalquantities, we have assumed linear strain field through the whole thickness direction. The electric and mechanical quantities have been coupled through the constitutive equations. Unlike typical shell element, the present shell element allows thickness change. Thus, three-dimensional piezoelasticity can be accurately simulated. Base on the formulation, a finite element program is generated and the code is validated by solving numerical examples. The results from the present work are well agreed with those from other references.

Development of Real-Time Thickness Measuring System for Insulated Pipeline Using Gamma-ray (감마선을 이용한 단열배관의 실시간 두께측정시스템 개발)

  • Jang, Ji-Hoon;Kim, Byung-Joo;Kim, Gi-Dong;Cho, Kyung-Shik
    • Journal of the Korean Society for Nondestructive Testing
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    • v.22 no.5
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    • pp.500-507
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    • 2002
  • By this study, on-line real-time radiometric system was developed using a 64 channels linear array of solid state detectors to measure wall thickness of insulated piping system. This system uses an Ir-192 as a gamma ray source and detector is composed of BGO scintillator and photodiode. Ir-192 gamma ray source and linear detector array mounted on a computer controlled robotic crawler. The Ir-192 gamma ray source is located on one side of the piping components and the detector array on the other side. The individual detectors of the detector array measure the intensity of the gamma rays after passing through the walls and the insulation of the piping component under measurement. The output of the detector array is amplified by amplifier and transmitted to the computer through cable. This system collects and analyses the data from the detector array in real-time as the crawler travels over the piping system. The maximum measurable length of pipe is 120cm/min. in the case of 1mm scanning interval.

Effects of the Electroless Ni-P Thickness and Assembly Process on Solder Ball Joint Reliability (무전해 Ni-P 두께와 Assembly Process가 Solder Ball Joint의 신뢰성에 미치는 영향)

  • Lee, Ji-Hye;Huh, Seok-Hwan;Jung, Gi-Ho;Ham, Suk-Jin
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.60-67
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    • 2014
  • The ability of electronic packages and assemblies to resist solder joint failure is becoming a growing concern. This paper reports on a study of high speed shear energy of Sn-4.0wt%Ag-0.5wt%Cu (SAC405) solder with different electroless Ni-P thickness, with $HNO_3$ vapor's status, and with various pre-conditions. A high speed shear testing of solder joints was conducted to find a relationship between the thickness of Ni-P deposit and the brittle fracture in electroless Ni-P deposit/SAC405 solder interconnection. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the fractured pad surface with and without $HNO_3$ vapor treatment. A scanning electron microscopy (SEM) and an energy dispersive x-ray analysis (EDS) confirmed that there were three intermetallic compound (IMC) layers at the SAC405 solder joint interface: $(Ni,Cu)_3Sn_4$ layer, $(Ni,Cu)_2SnP$ layer, and $(Ni,Sn)_3P$ layer. The high speed shear energy of SAC405 solder joint with $3{\mu}m$ Ni-P deposit was found to be lower in pre-condition level#2, compared to that of $6{\mu}m$ Ni-P deposit. Results of focused ion beam and energy dispersive x-ray analysis of the fractured pad surfaces support the suggestion that the brittle fracture of $3{\mu}m$ Ni-P deposit is the result of Ni corrosion in the pre-condition level#2 and the $HNO_3$ vapor treatment.