Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Electrical Properties and Resonant Frequency of Pt/Pb(Zr,Ti)$O_3$/Pt Films

Pt/Pb(Zr,Ti)$O_3$/Pt 박막의 전기적 특성과 공진주파수에 관한 연구

  • Park, Young (Catenary System Research Group, Korea Railroad Research Institute) ;
  • Lee, Ki-Won (Catenary System Research Group, Korea Railroad Research Institute) ;
  • Jang, Dong-Uk (Catenary System Research Group, Korea Railroad Research Institute) ;
  • Park, Hyun-June (Catenary System Research Group, Korea Railroad Research Institute) ;
  • Park, Gi-Yub (Department of Computer Electronic, Busan College of Information Technology) ;
  • Choi, Won-Seok (School of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Song, Joon-Tae (School of Electrical and Computer Engineering, Sungkyunkwan University)
  • 박영 (한국철도기술연구원 전철시스템연구그룹) ;
  • 이기원 (한국철도기술연구원 전철시스템연구그룹) ;
  • 장동욱 (한국철도기술연구원 전철시스템연구그룹) ;
  • 박현준 (한국철도기술연구원 전철시스템연구그룹) ;
  • 박기엽 (부산정보대학 디지털전자학부) ;
  • 최원석 (성균관대학교 전기전자컴퓨터공학부) ;
  • 송준태 (성균관대학교 전기전자컴퓨터공학부)
  • Published : 2004.07.14
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Abstract

The modeled resonant frequency and electrical properties of Pb(Zr, Ti)$O_3$ (PZT) film with various thicknesses have been investigated in film bulk acoustic wave resonators (FBARs). PZT films and Pt electrodes were fabricated by rf-magnetron sputtering. Fabrication process of electrodes and PZT were patterned by simple lift-off process and then back side of silicon was etched by 45wt% KOH. The crystal structure of PZT films with 0.5, 1 and 2 ${\mu}m$ thickness was investigated by x-ray deflection (XRD) and scanning electron microscopy (SEM). The dielectric constant and performance characteristics of PZT FBAR strongly depended on the film thickness. The resonant frequency of PZT films decreased with increasing film thickness. These sputtered PZT FBAR with simple lift-off process enable us to fabricate high Q values with resonant frequencies. (0.71 - 1.48 GHz).

Keywords