• Title/Summary/Keyword: GF(2$^n$)

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The Substitution of Inkjet-printed Gold Nanoparticles for Electroplated Gold Films in Electronic Package

  • Jang, Seon-Hui;Gang, Seong-Gu;Kim, Dong-Hun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.25.1-25.1
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    • 2011
  • Over the past few decades, metallic nanoparticles (NPs) have been of great interest due to their unique mesoscopic properties which distinguish them from those of bulk metals; such as lowered melting points, greater versatility that allows for more ease of processability, and tunable optical and mechanical properties. Due to these unique properties, potential opportunities are seen for applications that incorporate nanomaterials into optical and electronic devices. Specifically, the development of metallic NPs has gained significant interest within the electronics field and technological community as a whole. In this study, gold (Au) pads for surface finish in electronic package were developed by inkjet printing of Au NPs. The microstructures of inkjet-printed Au film were investigated by various thermal treatment conditions. The film showed the grain growth as well as bonding between NPs. The film became denser with pore elimination when NPs were sintered under gas flows of $N_2$-bubbled through formic acid ($FA/N_2$) and $N_2$, which resulted in improvement of electrical conductance. The resistivity of film was 4.79 ${\mu}{\Omega}$-cm, about twice of bulk value. From organic anlayses of FTIR, Raman spectroscopy, and TGA, the amount of organic residue in the film was 0.43% which meant considerable removal of the solvent or organic capping molecules. The solder ball shear test was adopted for solderability and shear strength value was 820 gf (1 gf=9.81 mN) on average. This shear strength is good enough to substitute the inkjet-printed Au nanoparticulate film for electroplating in electronic package.

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Development of Thin-Film Type Strain Gauges for High-Temperature Applications (고온용 박막형 스트레인 게이지 개발)

  • Choi, Sung-Kyu;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1596-1598
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    • 2002
  • This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

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Properties of Cr-N Films Prepared by the Arc-induced Ion Plating (아아크방전 유도형 이온플레이팅에 의한 Cr-N 피막의 특성)

  • Jeong, Jae In;Mun, Jong Ho;Hong, Jae Hwa;Gang, Jeong Su;Lee, Yeong Baek
    • Journal of the Korean institute of surface engineering
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    • v.24 no.1
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    • pp.24-24
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    • 1991
  • Cr-N films were deposited on low-carbon steel sheets by the reactive arc-induced ion plating (AIIP). The influence of the deposition conditions (nitrogen pressure and substrate bias voltage) on the crystal orientation, morphology and microhardness of the Cr-N films has been investigated using x-ray diffractometer and scanning electron microscope. The impurities and contaminations on the surface and at the interface, and the layer-by-layer compositions of the film have been analyzed using scanning Auger multiprobe (SAM) and glow discharge spectroscope (GDS). The mixed state of Cr and Cr2N turned out to have a fine fibrous structure. The Cr2N films were deposited at a wide range of nitrogen flow rates. The orientations of Cr2N films were mainly (110) and (111), and the intensity of the (111) peak increased as the substrate bias voltage increased. The micorstructure of the Cr2N film was dense and no columnar structure was observed. The films in the mixed state of Cr2N and CrN were also dense without columnar structure. The maximum microhardness of the Cr-N films was 2400 kg/$\textrm{mm}^2$ at 10gf load.

Properties of High Power Flip Chip LED Package with Bonding Materials (접합 소재에 따른 고출력 플립칩 LED 패키지 특성 연구)

  • Lee, Tae-Young;Kim, Mi-Song;Ko, Eun-Soo;Choi, Jong-Hyun;Jang, Myoung-Gi;Kim, Mok-Soon;Yoo, Sehoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.1
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    • pp.1-6
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    • 2014
  • Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

Characteristics of Chromiun Nitride Thin-film Strain Guges (크로질화박막 스트레인 게이지의 특성)

  • Chung, Gwiy-Sang;Kim, Gil-Jung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.134-138
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    • 2000
  • The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

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Fabrication of High-sensitivity Thin-film Type Strain-guges (고감도 박막형 스트레인 게이지의 제작)

  • Chung, Gwiy-Sang;Seo, Jeong-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.135-141
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    • 2000
  • The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

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EXTRAPOLATED CRANK-NICOLSON APPROXIMATION FOR A LINEAR STEFAN PROBLEM WITH A FORCING TERM

  • Ahn, Min-Jung;Lee, Hyun-Young
    • Journal of applied mathematics & informatics
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    • v.8 no.3
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    • pp.773-793
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    • 2001
  • The explicit expressions for the 2n+1 primitive idempotents in R/sub pⁿ/ = F[x]/< x/sup pⁿ/ -1>, where F is the field of prime power order q and the multiplicative order of q modulo pⁿ is ø(pⁿ)/2(n≥1 and p is an odd prime), are obtained. An algorithm for computing the generating polynomials of the minimal QR cyclic codes of length pⁿ, generated by these primitive idempotents, is given and hence some bounds on the minimum distance of some QR codes of prime length over GF(q)(q=2, 3, ...) are obtained.

Effect of different lateral occlusion schemes on peri-implant strain: A laboratory study

  • Lo, Jennifer;Abduo, Jaafar;Palamara, Joseph
    • The Journal of Advanced Prosthodontics
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    • v.9 no.1
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    • pp.45-51
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    • 2017
  • PURPOSE. This study aims to investigate the effects of four different lateral occlusion schemes and different excursions on peri-implant strains of a maxillary canine implant. MATERIALS AND METHODS. Four metal crowns with different occlusion schemes were attached to an implant in the maxillary canine region of a resin model. The included schemes were canine-guided (CG) occlusion, group function (GF) occlusion, long centric (LC) occlusion, and implant-protected (IP) occlusion. Each crown was loaded in three sites that correspond to maximal intercuspation (MI), 1 mm excursion, and 2 mm excursion. A load of 140 N was applied on each site and was repeated 10 times. The peri-implant strain was recorded by a rosette strain gauge that was attached on the resin model buccal to the implant. For each loading condition, the maximum shear strain value was calculated. RESULTS. The different schemes and excursive positions had impact on the peri-implant strains. At MI and 1 mm positions, the GF had the least strains, followed by IP, CG, and LC. At 2 mm, the least strains were associated with GF, followed by CG, LC, and IP. However, regardless of the occlusion scheme, as the excursion increases, a linear increase of peri-implant strains was detected. CONCLUSION. The peri-implant strain is susceptible to occlusal factors. The eccentric location appears to be more influential on peri-implant strains than the occlusion scheme. Therefore, adopting an occlusion scheme that can reduce the occurrence of occlusal contacts laterally may be beneficial in reducing peri-implant strains.

Security Analysis against RVA-based DPA Countermeasure Applied to $Eta_T$ Pairing Algorithm (RVA 기반의 페어링 부채널 대응법에 대한 안전성 분석)

  • Seo, Seog-Chung;Han, Dong-Guk;Hong, Seok-Hie
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.21 no.2
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    • pp.83-90
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    • 2011
  • Recently, pairings over elliptic curve have been applied for various ID-based encryption/signature/authentication/key agreement schemes. For efficiency, the $Eta_T$ pairings over GF($P^n$) (P = 2, 3) were invented, however, they are vulnerable to side channel attacks such as DPA because of their symmetric computation structure compared to other pairings such as Tate, Ate pairings. Several countermeasures have been proposed to prevent side channel attacks. Especially, Masaaki Shirase's method is very efficient with regard to computational efficiency, however, it has security flaws. This paper examines closely the security flaws of RVA-based countermeasure on $Eta_T$ Pairing algorithm from the implementation point of view.

A differential Uniformity of Permutations u$^{x}$ in GF(2$^{n}$ ) (갈로아체 멱승 순환 함수의 입출력 변환의 균등성)

  • 김희진;김종덕;손중제;임종인
    • Proceedings of the Korea Institutes of Information Security and Cryptology Conference
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    • 1997.11a
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    • pp.189-195
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    • 1997
  • S-box의 암호학적 성질이 블록 암호 알고리즘의 안정성을 좌우한다. 여기서 말하는 암호학적 성질이란 선형 공격법에 안전한 높은 비선형성과 입출력 변화공격법에 안전한 입출력 변환의 낮은 균등성을 말한다. 본 논문에서는 갈로아 체의 원시원을 밑으로 하는 멱승 순환 함수를 이용한 S-box의 입출력 변환의 균등성에 관하여 서술한다.

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