• Journal of applied mathematics & informatics
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• 제27권3_4호
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• pp.955-961
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• 2009

In this paper, we establish some characterizations which is satisfied by the independence of the upper record values from the Pareto distribution. We prove that $X\;{\in}\;PAR(1,\;{\beta})$, $\beta$ > 0, if and only if $\frac{X_{U(n)}}{X_{U(m)}}$ and $X_{U(m)}$, $1\;{\le}\;m\;<\;n$ are independent. We show that $X\;{\in}\;PAR(1,\;{\beta})$, $\beta$ > 0 if and only if $\frac{X_{U(n)}+X_{U{(n+1)}}}{X_{U(n)}}$ and $X_{U(n)}$, $n\;{\ge}\;1$ are independent. And we characterize that $X\;{\in}\;PAR(1,\;{\beta})$, $\beta$ > 0, if and only if $\frac{X_{U(n)}}{X_{U(n)}+X_{U{(n+1)}}}$ and $X_{U(n)}$, $n\;{\ge}\;1$ are independent.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• 한국재료학회지
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• 제32권9호
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• pp.379-383
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• 2022

In this study, Barium Germanium glasses were prepared with a composition of xBaO-(72-x)GeO₂-8La₂O₃-20ZnO where x = 16.0, 18.0, 20.0, 22.0 and 24.0 mol% respectively. Their physical and optical properties, such as refractiveness index, glass transition temperature (T_g), softening temperature (T_s), transmittance and Knoop hardness were studied. The results showed that refractive index, T_g, T_s and coefficient of thermal expansion (CTE) increased with increasing BaO concentration. The refractive index of all the prepared samples was observed between 1.7811 to 1.7881. The Abbe number was calculated by formula using n_d (589.3 nm), n_f (656.3 nm) and n_c (486.1 nm) and observed to be between 38 to 40. The Abbe number of the prepared sample was similar to that of BaO and GeO₂. The transmittance of the prepared glasses was observed to be between 80 ~ 82 % throughout the range from 200 nm to 800 nm. Knoop hardness divided into seven steps were measured 5 class (≥ 450 ~ < 550) of all prepared samples.

• Applied Microscopy
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• 제46권3호
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• pp.160-163
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• 2016

Effect of dealloying condition on the formation of nanoporous structure in melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy has been investigated in the present study. In as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy spinodal decomposition occurs in the undercooled liquid during cooling, leading to amorphous phase separation. By immersing the as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy in 5 wt% HCl solution, Al-rich amorphous region is leached out, resulting in an interconnected nano-porous $GeO_x$ with an amorphous structure. The dealloying temperature strongly affects the whole dealloying process. At higher dealloying temperature, dissolution kinetics and surface diffusion/agglomeration rate become higher, resulting in the accelerated dealloying kinetics, i.e., larger dealloying depth and coarser pore-ligament structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.44.2-44.2
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• 2007

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.41-45
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• 2010

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

• 대한전기학회논문지
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• 제41권3호
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• pp.261-266
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• 1992

In this paper, we investigated the stability of TeS1100-xTGeS1xT( x = 15,33,50 at. %) thin films by observing the transmittance and reflectance changes with annealing and exposure of diode laser(780nm). As results of transmittance changes in constant tenperature and humidity atmosphere, it was shown that TeS150TGeS150T thin film has the smallest transmittance change. From the XRD patterns, it was confirmed that the transmittance changes in TeS150TGeS150T thin film before and after annealing are due to crystalization. The transmittance changes in TeS150TGeS150T thin film with annealing are largest at diode laser wavelength and the trasmittance changes with laser exposure are decreased fast.

• 한국자기학회지
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• 제2권2호
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• pp.99-104
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• 1992

상용의 Mn-Zn 훼라이트에 $GeO_{2}$와 $SnO_{2}$를 0.05, 0.3, 1.0 wt% 첨가하여 투자율의 온도특성, 손실인자 및 미세구조변화를 X-선 회절분석기, 주사전자현미경 및 LCR meter를 이용하여 관찰 하였다. $SnO_{2}$, $GeO_{2}$의 첨가량이 증가함에 따라, 투자율의 SPM(Secondary Peak Maximum)는 약 $80^{\circ}C$로부터 상온이하로 이동하였다. 미세구조의 현격한 변화없이 수반된 이러한 SPM의 이동은 이온 반경이 다른 Sn과 Ge이 주격자에 고용되었기 때문으로 판단된다. 투자율 및 손실인자의 주파수 의존성은 투자율이 100 kHz까지 모든조성에서 큰 변화가 없음을 알수있었고 손실인자는 10 kHz에서 최대값을 얻을 수 있었다.