• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• 한국환경농학회지
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• 제42권4호
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• pp.389-395
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• 2023

This study evaluated the effects of gibberellic acid (GA₃) on the growth and quality of creeping bentgrass (Agrostis palustris Huds.). Experimental treatments included a No application of fertilizer and GA₃ (NFG) Control [3 N active ingredient (a.i.) g/m²], 0.3GA₃ (GA₃ 0.3 a.i. mg/m²/200 mL), 0.6GA₃ (GA₃ 0.6 a.i. mg/m²/200 mL), 1.2GA₃ (GA₃ 1.2 a.i. mg/m²/200 mL), and 2.4GA₃ (GA₃ 2.4 a.i. mg/m²/200 mL). Additionally, the study included a 1.5N+GA₃ experiment with similar GA₃ treatments combined with 1.5N a.i. g/m² : NFG, Control (3N a.i. g/m²), 1.5N+ 0.3GA₃ (1.5N a.i. g/m²+GA₃ 0.3 a.i. mg/m²/200 mL), 1.5N+0.6GA₃ (1.5N a.i. g/m²+GA₃ 0.6 a.i. mg/m²/200 mL), 1.5N+1.2GA₃ (1.5N a.i. g/m²+GA₃ 1.2 a.i. mg/m²/ 200 mL), and 1.5N+2.4GA₃ (1.5N a.i. g/m²+GA₃ 2.4 a.i. mg/m²/200 mL). Compared to the NFG, turf color index chlorophyll content was not significantly different (p< 0.05). However, shoot length in 1.2GA₃, 2.4GA₃, 1.5N+0.3GA₃, 1.5N+0.6GA₃, 1.5N+1.2GA₃, and 1.5N+2.4GA₃ treatments increased by 0.8%, 10.6%, 5.15%, 8.3%, 13.5 %, and 21.6%, respectively, compared to the control. As compared to the control, clipping yield in 1.5N+1.2GA₃ and 1.5N+2.4GA₃ treatments increased by 7.1% and 14.3 %, respectively. These results indicated that GA₃ application increased shoot length, with the 1.2GA₃ treatment showing shoot length similar to the control (3N a.i. g /m² ).

• 한국의류학회지
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• 제17권4호
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• pp.622-637
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• 1993

The Purposes of this study were to investigate the significant correlation among the length changes of body surface total lines and between the length changes of body surface total lines and those of component body surface segment lines, and to reveal anticipated relation among body surface length changes by the lower limb movement including all movement direction of hip joint, knee joint & ankle joint for the more functional clothing making & designing. 10 Crosswise & 5 lengthwise body surface total lines and 48 crosswise & 39 lengthwise body surface segment lines of 26 female college students aged from 18 to 24 years were measured directly on the body surface and analyzed by ANOYA & Multiple Comparison Test(Tukey), and the length changes of them were calculated as the difference of the mean length at Fl movement from the mean length at each movement and were analyzed by PEARSON CORRELATION. The results were as following : 1. Correlation among the length changes of body surface total lines (1) Correlation among the length changes of body surface total lines significantly changed by the movement ; 1) The more GA5 expanded, the more GA6 & GA7 each expanded, and the more GA18 expanded, the more GA1 & GA3 each expanded. 2) The more GA15 expanded, the less GA14 each contracted. 3) The more GA7 expanded, the larger GA17 contracted. 4) The more GA1 & GA18 expanded, the larger GA16 contracted, and the larger GM contracted, the less GA16 contracted. (2) Only GA7 and GA17(at F4) showed high (over r=0.7) correlation coefficient, But others' correlation coefficients were r=0.4~0.7. (3) Correlation coefficients among & between girth items and length items 1) Correlation coefficients among girth items were shown + ; between GA3 and GA4, GA5, GA8, between GA5 and GA6, GA7, GA9 each, between GA1 and GA6 and between GA4 and GA7. 2) Correlation coefficients among length items were shown + or - ; shown + between GA14 and GA15 and between GA17 and GA16 ; but Shown - Between GAlS and GA16. 3) Correlation coefficients between girth items and length items were mainly shown - : shown-between GA1 and GA16, GA17, between, GA4 and GA16, between GA6, GA7 each and GA17, between GA8 and GA18 ; but shown + between GA1, GA3 each and GA18 and between GA8 and GA14 were shown +. 2. Correlation between the length changes of body surface total lines and those of component body surface segment lines. (1) All correlation coefficients were + except A147 of GA14. (2) Correlation coefficient over r=0.7 was shown ; between GA3 and CB3, A35 each, between GA5 and A054, between GA6 and A63, between GA7 and A72, A74 each, between GA8 and A83, A84 each, between GA15 and A153, between GA16 and Al64, Al65 each, between GA18 and A189 : but was not shown between GA4, GA17 and it's component body surface segment lines each. (3) Characteristics of correlation between the length changes of body surface total lines and those of body surface segment lines ; 1) If significant correlation of body surface total lines were expansion parts, it's component body surface segment lines was also expansion segment and the otherwise were the same. But exception was shown between expansion line GA3 and A031 (at F4), between GA18 and AlS9 (at F6) and between GA14 and A147, so to speak GA3 & lines and GA14 was contraction total line oppositely A147 was expansion. 2) The more GA3, GAlS expanded, the less A031, A189 contracted. 3) The more GA14 contracted, the more A147 expanded. 4) All correlation except the above 2), 3), the more total lines (GA1, GA3, GA5, GA15, GA16, GA18) expanded, the more segment lines (A15, CB1, A31, A34, CB3, A52, A54, A153, A169, A181) expanded, or the larger total lines (GA14, GA16, GA17) contracted, the larger segment lines (A141, A142, A161, A164, A165, A172) contracted.

• 한국진공학회지
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• 제17권4호
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• pp.359-364
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• 2008

금속 유기화학 증착기 (metal-organic chemical vapor deposition)를 이용하여 사파이어 기판 위에 $Al_{0.3}Ga_{0.7}N$/GaN 및 $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ 이종접합 구조들을 성장하고, 이들 시료의 전자와 정공들 간의 구속 효과를 조사하기 위하여 광학적, 구조적 특성을 비교하였다. 저온 (10 K) photoluminescence 실험으로부터 $Al_{0.3}Ga_{0.7}N$/GaN 단일 이종접합 구조의 경우 3.445 eV에서 단일의 이차원 전자가스 (two-dimensional electron gas; 2DEG) 관련된 발광을 관찰한 반면, $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ 다중 이종접합 구조의 경우 3.445 eV에서 뿐만 아니라, 3.42 eV에서 추가적인 2DEG 관련된 발광을 관찰 할 수 있었다. 이 두 개의 2DEG 관련 신호들의 근원을 조사하기 위하여 $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ 다중 이종접합구조에서의 에너지 밴드 구조를 이론적으로 계산하여 실험과 비교한 결과, 하나의 2DEG에 의한 서로 다른 버금띠로 부터가 아닌 다중 구조에 형성된 두 개의 2DEG로부터의 신호로 해석되었다.

• 한국결정성장학회지
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• 제31권1호
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• pp.1-7
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• 2021

Ga2O3의 준 안정상인 ε-Ga2O3는 육각형 구조나 준 육각형 구조를 가지는 기판들과 정합성이 우수하여 β-Ga2O3보다 상대적으로 쉽게 낮은 표면 거칠기와 결함 밀도를 갖는 박막을 얻을 수 있다. 이에 ε-Ga2O3를 고온에서 열처리하면 β-Ga2O3로 상전이 되는 특성을 이용하여 표면 거칠기와 결함 밀도가 낮은 고품질 β-Ga2O3 박막의 제조를 시도하였다. 이를 위해서는 고품질 ε-Ga2O3 박막의 성장이 선행되어야 하므로 본 연구에서는 갈륨과 산소의 공급 유량 비율에 따른 Ga2O3 박막의 구조적, 형태적 특성을 분석함으로써 최적의 유량 비율을 조사하였다. 추가로 열처리 조건과 ε-Ga2O3 박막에 혼입된 β-Ga2O3가 상전이 이후 β-Ga2O3의 결정성에 미치는 영향도 함께 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제26권1호
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• pp.131-135
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• 2005

Gallium nitride (GaN) powders and nanowires were prepared by using tris(N,N-dimethyldithiocarbamato)gallium(III) (Ga(DmDTC)$_3$) and tris(N,N-diethyldithiocarbamato)gallium(III) (Ga(DeDTC)$_3$) as new precursors. The GaN powders were obtained by reaction of the complexes with ammonia in the temperature ranging from 500 to 1100 ${^{\circ}C}$. The process of conversion of the complexes to GaN was monitored by their weight loss, XRD, and $^{71}$Ga magic-angle spinning (MAS) NMR spectroscopy. Most likely the complexes decompose to $\gamma$ -Ga$_2$S$_3$ and then turn into GaN via amorphous gallium thionitrides (GaS$_x$N$_y$). The reactivity of Ga(DmDTC)$_3$ with ammonia was a little higher than that of Ga(DeDTC)$_3$. Room-temperature photoluminescence spectra of asprepared GaN powders exhibited the band-edge emission of GaN at 363 nm. GaN nanowires were obtained by nitridation of as-ground $\gamma$ -Ga$_2$S$_3$ powders to GaN powders, followed by sublimation without using templates or catalysts.

• 한국결정성장학회지
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• 제12권3호
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• pp.149-156
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• 2002

$Ga_2O_3$ : $Eu^{3+}$ 형광체 분말을 균일침전법에 의해 제조하여 TG/DTA, XRD, FT-IR, SEM 등으로 특성을 분석하였다. 결정질 GaOOH 와 비정질에 가까운 $\gamma$-$Ga_2O_3$ 등 두 종류의 분말이 얻어졌다. 요소 농노가 0.5 M 이하에서는 입자는 막대모양을 이루고, 열처리에 따라 $\alpha$-$Ga_2O_3$을 거쳐서 $\beta$-$Ga_2O_3$상으로 변태하였다. 한편 나노미터 크기를 갖는 $\gamma$-$Ga_2O_3$분말은 1.0 M 이상의 요소 농도에서 생성되며, 직접 $\beta$-$Ga_2O_3$으로 전이하였다. 실온에서 광 발광 특성을 비교한 결과 마이크로미터 크기의 분말에 비해 나노미터 크기의 분말이 610 nm에서의 발광 강도가 더 크게 나타났다.

• Journal of Plant Biology
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• 제35권3호
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• pp.185-190
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• 1992

강낭콩의 두 품종(정상종인 Kentucky Wonder와 왜성종인 Masterpiece)의 미성숙 종자로부터 부분 정제한 GA $3{\beta}-수산화효소를$ 사용하여 $[^3H]GA_{20}$으로부터 $GA_1$로의 효소활성의 변화를 조사하였다. 두 품종의 종자성숙에 따른 $3{\beta}$ 수산화효소 활성의 변화와 강약에는 차이가 없었다. 극히 미성숙한 종자에서 단위 단백질당 GA $3{\beta}-수산화효소$ 활성이 가장 높았다. 단위 종자당 효소의 비활성은 개화 후 21일 전후에서 최대치를 나타내었으며, 종자가 더욱 성숙함에 따라 활성은 감소되었다. 동일량의 $3{\beta}-수산화효소$ 활성을 사용하여 $[17-^{13}C,\;^3H_2]\;GA_{20}$의 대사를 조사한 결과, GA_1,\;GA_5,\;GA_6$으로의 변환율은 종자생장단계에 관계 없이 거의 일정하였다. $GA_5로부터\;GA_6$의 epoxidation은 정제한 $3{\beta}-수산화효소분획에$ 이루어졌으며(Kobayashi et al., 1991), 이 반응은 $3{\beta}-수산화효소의$ 기질들만에 의해 특이적으로 억제되었다. 이러한 결과는 강낭콩 미성숙종자에서 $GA_{20}의\;3{\beta}-수산화반응과\;GA_5$의 epoxidation은 동일 효소에 의해 촉매됨을 시사한다.

• 한국재료학회지
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• 제20권8호
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• 한국식물학회:학술대회논문집
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• 한국식물학회 1987년도 식물생명공학 심포지움 논문집 Proceedings of Symposia on Plant Biotechnology
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• pp.133-148
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• 1987

Gibberellin(GA) 3-$\beta$ hydroxylation is very important for the shoot elogation in the higher plants, since only 3$\beta$-hydryoxylated GAs promote shoot elogation in several plants. Fluctuation of 3$\beta$-hydryoxylase activity was examined during seed maturation using two cultivars of , P. vulgaris, Kentucky Wonder (normal) and Masterpiece (dwarf). Very immature seeds of both cultivars contain high level of 3$\beta$-hydroxylase activity (per mg protein). Both cultivars showed maximum of enzyme activity (per seed) in the middle of their maturation process. Gibberellin 3$\beta$-hydroxylase catalyzing the hydroxylation of GA20 to GA1 was purified 313-fold from very early immature seeds of P. vulgaris. Crude soluble enzyme extracts were purified by 15% methanol precipitation, hydrophobic interaction chromatogrphy, DEAE ion exchange column chromatography and gel filtration HPLC. The 3$\beta$-hydroxylase activity was unstable and lost much of its activity duting the purification. The molecular weight of purified enzyme was extimated to be 42, 000 by gel filtration HPLC and SDS-PAGE. The enzyme exhibited maximum activity at pH 7.7. The Km values for [2.3-3H] GA20 and [2.3-3H]GA9 were 0.29 $\mu$M and 0.33 $\mu$M, respectively. The enzyme requires 2-oxoglutarate as a cosubstrate; the Km value for 2-oxoglutarate was 250 $\mu$M using 3H GA20 as a substrate. Fe2+ and ascorbate significantly activated the enzyme at all purification steps, while catalase and BSA activated the purified enzyme only. The enzyme was inhibited by divalent cations Mn2+, Co2+, Ni2+, Cu2+, Zn2+, Cd2+ and Hg2+. Effects of several GAs and GA anaogues on the putrified 3$\beta$-hydroxylase were examined using [3H]GA9 and GA20 as a substrates. Among them, GA5, GA9, GA15, GA20 and GA44 inhibited the enzyme activity. [13C, 3H] GA20 was converted by the partially purified enzyme preparation to [13C, 3H]GA1, GA5 and GA6, which were identified by GC-MS, GA9 was converted only GA4, GA15 and GA44 were converted to GA37 and GA38, respectively. GA5 was epoxidized to GA6 by the preparation. This suggests that 3$\beta$-hydroxylation of GA20 and epoxidation of GA5 are catalyzed by the same enzyme in P, vulgaris.