• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.48-55
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• 1998

We propose a new static current source model and parameter extraction method for AlGaAs/GaAs HBT. The proposed model has 9 parameters describing internal currents and are experessed with the physically meaningful parameters.The proposed parameter extraction method uses the measured dC IV curves and does not need the gummel plt data and any optimization process. the constructed model based on the proposed method predicts the measured data well.

• Journal of Multimedia Information System
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• v.4 no.2
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• pp.89-92
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• 2017

This paper investigates simple gray level image enhancement technique based on Genetic Algorithms and Local Statistics. The task of GA is to adapt the parameters of local sliding masks over pixels, finding out the best parameters preserving the brightness and possibly preventing the creation of intensity artifacts in the local area of images. The algorithm is controlled by GA as to enhance the contrast and details in the images automatically according to an object fitness criterion. Results obtained in terms of subjective and objective evaluations, show the plausibility of the method suggested here.

• Membrane and Water Treatment
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• v.9 no.5
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• pp.363-371
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• 2018

In this work, it was investigated the usability of artificial bee colony (ABC) and genetic algorithm (GA) in modeling adsorption of Co(II) onto drinking water treatment sludge (DWTS). DWTS, obtained as inevitable byproduct at the end of drinking water treatment stages, was used as an adsorbent without any physical or chemical pre-treatment in the adsorption experiments. Firstly, DWTS was characterized employing various analytical procedures such as elemental, FT-IR, SEM-EDS, XRD, XRF and TGA/DTA analysis. Then, adsorption experiments were carried out in a batch system and DWTS's Co(II) removal potential was modelled via ABC and GA methods considering the effects of certain experimental parameters (initial pH, contact time, initial Co(II) concentration, DWTS dosage) called as the input parameters. The accuracy of ABC and GA method was determined and these methods were applied to four different functions: quadratic, exponential, linear and power. Some statistical indices (sum square error, root mean square error, mean absolute error, average relative error, and determination coefficient) were used to evaluate the performance of these models. The ABC and GA method with quadratic forms obtained better prediction. As a result, it was shown ABC and GA can be used optimization of the regression function coefficients in modeling adsorption experiments.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.554-562
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• 2015

This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width ($W_{fin}$) and the height of GaN layer ($H_{GaN}$) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/GaN FinFET.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.1
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.57-62
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• 1993

In this paper, both feasible power gain and power added efficiency at the operating center frequency of 12 GHz are stressed to design a power FET with double-heterjunction structure. The variable parameters or the design are the unit gate width, the gate length, the doping density of AlGaAs, the AlGaAs thickness, the spacer thickness, the Al mole fraction, and the GaAs well thickness. The results of simulation for the FET with 1.mu.m gate length show that the power gain and the power added efficiency are 10.2 dB and 36.3% at 12GHz, respectively. An extrapolation of the relation between current gain and unilateral gain yields a 17 GHz cutoff frequency and 43GHz maximum frequency of oscillation. The calculation of the current versus voltage characteristics show that the output power of the device is about 0.62W.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.5
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• The Journal of Churna Manual Medicine for Spine and Nerves
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• v.10 no.1
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• pp.47-61
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• 2015

Objectives : The purpose of this study is body parameters characteristics through posture analysis system of musculoskeletal problem patient Methods : Posture analysis system were performed for 164 patients to measure body parameters such as Q-angle, body inclination, neck inclination, PCMT(posterior cervical muscle tension), Knee flexion and posture balance. Statistical analysis using statistical analysis techniques and Pearson correlation coefficients was performed to assess the body parameters obtained by posture analysis system. Results : More than half of people out of 164 reported low back pain, 34.8% of the total was found to have neck pain. There was not a significant difference between genders from the characteristics of gender based body parameters expect for the statistical difference in Q angle, PCMT. There was a significant correlation between low back pain and multiple response status. There was a significant correlations between knee pain and Q angle. Also There was a significant correlations between pelvic pain and posture balance of ankle. Conclusions : Posture analysis system can be used to perform the analysis in place of X-ray measuring body posture and clinical parameters. The results of this study are expected to be the basis for further research on the clinical application of posture analysis system.