• 제목/요약/키워드: GA

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광통신용 GaAs 기반 1.3 μm GaAsSb/InGaAs와 GaAsSb/InGaNAs 양자우물 레이저의 광학적특성 시뮬레이션 (Simulation of Optical Characteristics of 1.3 μm GaAs-Based GaAsSb/InGaAs and GaAsSb/InGaNAs Quantum Well Lasers for Optical Communication)

  • 박승환
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.1-6
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    • 2011
  • Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

체표(體表)길이 변화(變化)의 상관성(相關性) 연구(硏究) - 다리(下肢) 동작(動作)에 따른 변화량(變化量)을 중심(中心)으로 - (A Study on Correlation among Length Changes of Body Surface Total lines and Segment Lines -Changed Amount Caused by the Lower Limb Movements-)

  • 조성희
    • 한국의류학회지
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    • 제17권4호
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    • pp.622-637
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    • 1993
  • The Purposes of this study were to investigate the significant correlation among the length changes of body surface total lines and between the length changes of body surface total lines and those of component body surface segment lines, and to reveal anticipated relation among body surface length changes by the lower limb movement including all movement direction of hip joint, knee joint & ankle joint for the more functional clothing making & designing. 10 Crosswise & 5 lengthwise body surface total lines and 48 crosswise & 39 lengthwise body surface segment lines of 26 female college students aged from 18 to 24 years were measured directly on the body surface and analyzed by ANOYA & Multiple Comparison Test(Tukey), and the length changes of them were calculated as the difference of the mean length at Fl movement from the mean length at each movement and were analyzed by PEARSON CORRELATION. The results were as following : 1. Correlation among the length changes of body surface total lines (1) Correlation among the length changes of body surface total lines significantly changed by the movement ; 1) The more GA5 expanded, the more GA6 & GA7 each expanded, and the more GA18 expanded, the more GA1 & GA3 each expanded. 2) The more GA15 expanded, the less GA14 each contracted. 3) The more GA7 expanded, the larger GA17 contracted. 4) The more GA1 & GA18 expanded, the larger GA16 contracted, and the larger GM contracted, the less GA16 contracted. (2) Only GA7 and GA17(at F4) showed high (over r=0.7) correlation coefficient, But others' correlation coefficients were r=0.4~0.7. (3) Correlation coefficients among & between girth items and length items 1) Correlation coefficients among girth items were shown + ; between GA3 and GA4, GA5, GA8, between GA5 and GA6, GA7, GA9 each, between GA1 and GA6 and between GA4 and GA7. 2) Correlation coefficients among length items were shown + or - ; shown + between GA14 and GA15 and between GA17 and GA16 ; but Shown - Between GAlS and GA16. 3) Correlation coefficients between girth items and length items were mainly shown - : shown-between GA1 and GA16, GA17, between, GA4 and GA16, between GA6, GA7 each and GA17, between GA8 and GA18 ; but shown + between GA1, GA3 each and GA18 and between GA8 and GA14 were shown +. 2. Correlation between the length changes of body surface total lines and those of component body surface segment lines. (1) All correlation coefficients were + except A147 of GA14. (2) Correlation coefficient over r=0.7 was shown ; between GA3 and CB3, A35 each, between GA5 and A054, between GA6 and A63, between GA7 and A72, A74 each, between GA8 and A83, A84 each, between GA15 and A153, between GA16 and Al64, Al65 each, between GA18 and A189 : but was not shown between GA4, GA17 and it's component body surface segment lines each. (3) Characteristics of correlation between the length changes of body surface total lines and those of body surface segment lines ; 1) If significant correlation of body surface total lines were expansion parts, it's component body surface segment lines was also expansion segment and the otherwise were the same. But exception was shown between expansion line GA3 and A031 (at F4), between GA18 and AlS9 (at F6) and between GA14 and A147, so to speak GA3 & lines and GA14 was contraction total line oppositely A147 was expansion. 2) The more GA3, GAlS expanded, the less A031, A189 contracted. 3) The more GA14 contracted, the more A147 expanded. 4) All correlation except the above 2), 3), the more total lines (GA1, GA3, GA5, GA15, GA16, GA18) expanded, the more segment lines (A15, CB1, A31, A34, CB3, A52, A54, A153, A169, A181) expanded, or the larger total lines (GA14, GA16, GA17) contracted, the larger segment lines (A141, A142, A161, A164, A165, A172) contracted.

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강낭콩(Phaseolus vulgaris L.) 종자성숙에 따른 지베렐린 수산화효소 활성의 변화 II. $GA_{12}$를\; $GA_{15}$으로 변환하는 C20-Hydroxylase (Changes in Gibberellin Hydroxylase Activity during Seed Maturation of Phaseolus vulgaris L. II. C20-Hydroxylase Converting $GA_{12} to GA_{15}$)

  • 정상수
    • Journal of Plant Biology
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    • 제35권3호
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    • pp.191-195
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    • 1992
  • 강낭콩 두 품종(정상종인 Kentucky Wonder와 왜성종인 Masterpiece)의 미성숙종자로부터 부분 정제한 GA 수산화효소를 사용하여 $[^{14}C]GA_{12}$으로부터$\;GA_{15}$의 효소활성의 변화를 조사하였다. 메탄올 침전과 소수성크로마토그래피에 의해 부분 정제된 GA 수산화효소 활성분획은 효율적으로 $GA_{20}$$GA_{1}$$GA_{5}$을 경유하여 $GA_{6}$으로, $GA_{12}$$GA_{15},GA_{24}, GA_{9}$을 거쳐 $GA_{4}$로 변환시켰다. 두 품종의 종자성분에 따른 $GA_{12}$로부터 $GA_{15}$의 C-20 수산화효소 활성의 변화와 강약에는 차이가 없었다. 단위 단백질 C-20 수산화효소 활성은 종자가 성숙함에 따라 현저히 감소하였다. 한편 단위 종자당 효소활성은 개화 후 21일 전후에서 최대치를 나타내었는데 이는 $GA_{20}$$3{\beta}$-수산화효소활성의 변화와 유사하였다.

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InGaP/InAlGaP 이종 접합구조 태양전지 시뮬레이션 연구 (Simulation Study on Heterojunction InGaP/InAlGaP Solar Cell)

  • 김정환
    • 한국진공학회지
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    • 제22권3호
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    • pp.162-167
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    • 2013
  • 이종 p-InGaP/N-InAlGaP 접합 화합물 반도체 태양전지의 에피 구조를 제안하였다. 제안된 이종접합구조와 p-InGaP/p-GaAs/N-InAlGaP와 동종 p-InGaP/n-InGaP 접합구조 태양전지의 전류-전압 특성곡선을 시뮬레이션하고 결과를 비교분석하였다. 이종 p-InGaP/N-InAlGaP 접합구조에서 가장 높은 최대출력과 곡선인자(fill factor)를 나타내는 시뮬레이션 결과를 얻었으며 이를 바탕으로 제안된 이종접합 에피구조를 최적화하였다.

InGaP/GaAs HBT 의 DC 특성과 신뢰도 (DC characteristics and reliability of InGaP/GaAs HBTs)

  • 최번재;최재훈;송정근
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 하계종합학술대회논문집
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    • pp.401-404
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    • 1998
  • Recently, InGaP/GaAs HBTs have been much interested as a potential replacement for AlGaAs/GaAs HBTs because of their superior device and material properties. In this paper, DC characteristics of InGaP/GaAs HBTs and the temperature dependance as well as the reliability were investigated comparing with AlGaAs/GaAs HBTs. As a results InGaP/GaAs HBTs produced the superior performance to AlGaAs/GaAs HBTs.

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New Ballard Scale(NBS)의 확장 적용 (Application of the New Ballard Scale with Extended Scoring System in Full-term Newborns)

  • 안영미;김남희
    • Child Health Nursing Research
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    • 제13권4호
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    • pp.436-443
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    • 2007
  • Purpose: An exploratory study was done to examine the validity of the new Ballard scale with extended scoring system(eNBS) in estimating gestational age(AG) in full-term newborns. Method: The eNBS scoring system was extended to include all numbers of total score of NBS and GA to allow a 3-days variation in GA estimatio compared to the original scale which has a 2-week variation due to the application of a 5-score interval for the total NBS score and only even numbers for GA. GA by eNBS(GA-eNBS) was compared with GA by LMP(GA-LMP) and GA by standard NBS(GA-sNBS) in 133 full-term newborns. Difference between GA-LMP and GA-eNBS was analyzed for each GA. Results: Positive correlations were observed in GA-sNBS and GA-eNBS with GA-LMP. There was no difference between GA-LMP and GA-eNBS at 39GA and 40GA. At 37GA and 38GA, GA-eNBS overestimated GA-LMP up to 1 week, while underestimating up to 1 week at 41GA. Conclusions: The accuracy of eNBS was validated within 3 days of variation in GA estimation at 39-40GA. Overestimation by eNBS suggests the possible acceleration of fetal maturity in premature newborns, while underestimation, of the deceleration of fetal maturity in postterm newborns.

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지부자 활성성분이 D-Galactosamine 투여에 의한 흰쥐의 간손상에 미치는 영향 (The Hepatoprotective Effect of Active Compounds of Kochiae fructus on D-Galactosamine-Intoxicated Rats)

  • 김나영;이정숙;박명주;이경희;김석환;최종원;박희준
    • 한국식품영양과학회지
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    • 제33권8호
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    • pp.1286-1293
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    • 2004
  • 지부자(Kochiae Fructus)의 생리활성물질 검색 및 간손상에 미치는 영향을 연구할 목적으로 실험동물에 지부자 추출물을 경구 투여한 후 GaIN으로 간손상을 유발하여 혈액 및 간조직의 생화학적 변화를 관찰하고 free radical의 생성계와 해독계의 활성에 미치는 영향을 검토한 결과는 다음과 같다. GaIN 단독투여군은 대조군에 비하여 AST와 ALT가 증가하였으나, KFB, oleanolic acid, momordin Ic 투여군에서는 GaIN 단독투여군에 비해 유의적 감소를 보였다. 간조직의 지질과산화 함량은 GaIN 단독투여군이 대조군과 비교하여 증가하였고, KFM 200-GaIN군, KFB 200-GaIN군, momordin Ic 30-GaIN군과 oleanolic acid 30-GaIN군은 대조군에는 미치지 못하였으나 GaIN 단독투여군에 비해 현저히 감소하였다. XO, AO의 활성은 대조군보다 GaIN 단독투여군에서 유의적으로 증가하였으며, KFB 200-GaIN군, momordin Ic 30-GaIN군과 oleanolic acid 30-GaIN군의 XO와 AO의 활성은 GaIN 단독투여군보다 낮게 나타났다. 간조직 중의 GSH농도는 GaIN 단독투여군이 대조군에 비해 현저히 감소하였고, KFB 200-GaIN군과 oleanolic acid 30-GaIN군은 GaIN 단독투여군과 비교시 증가를 보였고, momordin Ic 30-GaIN군은 대조군에 가깝게 회복되었다. GaIN 단독투여군의 ${\gamma}$-GCS와 GR의 활성은 대조군에 비하여 유의한 감소를 보였고, momordin Ic 30-GaIN군의 ${\gamma}$ -GCS의 활성은 대조군에는 미치지 못하였지만 GaIN 단독투여군에 비해 유의하게 개선되었다. KFM 200-GaIN군, KFB 200-GaIN군, momordin Ic 30-GaIN군과 oleanolic acid 30-GaIN군의 GR 활성은 GaIN 단독투여군보다 유의한 증가를 보였다. GST활성은 GaIN 단독투여군이 대조군에 비하여 현저한 감소를 나타내었고, KFM200-GaIN군, KFB 200-GaIN군, momordin Ic 30-GaIN군과 oleanolic acid 30-GaIN군은 대조군 수준에는 못미쳤으나 GaIN 단독투여군보다 통계적으로 유의한 증가를 관찰할 수 있었다. SOD, catalase 및 GSH-Px의 활성은 대조군에 비하여 GaIN 단독투여군에서 감소를 보였고, SOD와 catalase 활성은 KFM, KFB와 oleanolic acid의 투여로 GaIN 단독투여군보다 높게 나타났다. 특히 momordin Ic 30-GaIN군의 SOD 활성은 대조군에 가깝게 개선되었다. GSH-Px의 활성은 KFM 200-GaIN군, KFB 200-GaIN군과 oleanolic acid 30-GaIN군은 대조군 수준에는 미치지 못하였으나 GaIN 단독투여군에 비해 현저히 증가하였고, 특히 momordin Ic 30-GaIN군은 대조군에 가깝게 증가되었다. 이상의 결과를 종합하여 볼 때 지부자로부터 분리한 momordin Ic가 GSH 농도를 증가시키고 활성산소 해독계에 관여하는 효소의 활성을 증가시킴으로서 GaIN으로 인한 간손상을 완화시키는 것으로 사료되어진다.

적외선검출소자를 위한 GaSb 결정 및 MBE로 성장한 Gasb/SI-GaAs 박막의 진성결함에 관한 연구 (Study on the Intrinsic Defects in Undoped GaSb Bulk and MBE-grown GaSb/SI-GaAs Epitaxial Layers for Infrared Photodetectors)

  • 김준오;신현욱;최정우;이상준;노삼규
    • 한국진공학회지
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    • 제18권2호
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    • pp.127-132
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    • 2009
  • Sb에 기초한 응력 초격자 적외선검출소자의 구성 물질인 도핑하지 않은 기판 GaSb 결정과 GaSb/SI-GaAs 박막에 잔존하고 있는 진성결함 (intrinsic defect)을 비교 조사하였다. 상온 근처 (250 K)까지 광여기 발광 (PL)을 보이는 GaSb 결정에서의 발광 에너지의 온도의존성으로부터, 밴드갭 에너지에 관한 경험식인 Varshni 함수의 파라미터 ($E_o$, $\alpha$, $\beta$)를 결정하였다. GaAs 기판 위에 성장된 이종 GaSb 박막에서는 GaSb 주요 진성결함으로 알려져 있는 29 meV의 이온화 에너지를 가지는 위치반전 (antisite) Ga ([$Ga_{Sb}$]) 결함과 함께 위치반전 Sb ([$Sb_{Ga}$])와의 복합결함 ([$Ga_{Sb}-Sb_{Ga}$])과 관련된 것으로 분석된 732/711 meV의 한 쌍의 깊은준위 (deep level)가 관측되었다. PL의 온도 및 여기출력 의존성을 분석하여, Sb-rich상태에서 성장된 GaSb 박막에서는 잉여 Sb의 자발확산 (self-diffusion)에 의하여 치환된 위치전도 [$Ga_{Sb}$] 및 [$Sb_{Ga}$]가 결합하여 [$Ga_{Sb}-Sb_{Ga}$]의 깊은준위를 형성하는 것으로 해석되었다.

III족 질화물 반도체의 실온 광여기 유도방출 (Stimulated emission from optically pumped column-III nitride semiconductors at room temperature)

  • 김선태;문동찬
    • E2M - 전기 전자와 첨단 소재
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    • 제8권3호
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    • pp.272-277
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    • 1995
  • We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.

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p-GaN/AlGaN/GaN E-mode FET 제작을 위한 선택적 GaN 식각 공정 개발 (Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication)

  • Jang, Won-Ho;Cha, Ho-Young
    • 한국정보통신학회논문지
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    • 제24권2호
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    • pp.321-324
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    • 2020
  • In this work, we developed a selective etching process for GaN that is a key process in p-GaN/AlGaN/GaN enhancement-mode (E-mode) power switching field-effect transistor (FET) fabrication. In order to achieve a high current density of p-GaN/AlGaN/GaN E-mode FET, the p-GaN layer beside the gate region must be selectively etched whereas the underneath AlGaN layer should be maintained. A selective etching process was implemented by oxidizing the surface of the AlGaN layer and the GaN layer by adding O2 gas to Cl2/N2 gas which is generally used for GaN etching. A selective etching process was optimized using Cl2/N2/O2 gas mixture and a high selectivity of 53:1 (= GaN/AlGaN) was achieved.