• 한국연소학회:학술대회논문집
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• 한국연소학회 2002년도 제25회 KOSCI SYMPOSIUM 논문집
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• pp.129-139
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• 2002

From the view of the environmental protection against the use of fossil fuels, a great of efforts have been exerted to find an alternative energy source. Hydrogen may become an alternative. However the product species of the hydrogen flame is only $H_2O$, which emits only non-luminous radiation so the radiation from it is much smaller than that for a hydrocarbon flame. In this study, the authors designed and fabricated a laboratory scale test furnace to study thermal characteristics of hydrogen-air diffusion flame. In addition, the effects of addition of reacting as well as non-reacting solid particles were experimentally investigated. Among the total heat flux to the wall, about 75% was occupied by radiation while 25 % by convection. When the aluminum oxide ($Al_2O_3$) particles were added, the radiative heat flux was reduced due to heat blockage effects. On the other hand, the total as well as the radiative heat flux was increased when the carbon particles were seeded, since the overall temperature increased. The effects of swirl and excess air ratio were also examined.

• 설비공학논문집
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• 제26권6호
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• pp.269-274
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• 2014

The experimental performance evaluation of a cylindrical steam reformer with various thermal conditions has been conducted. The bottom space of the cylindrical reactor was packed with Ruthenium (Ru) catalyst. A three-segment furnace was installed to create the axially variable boundary temperature distribution. Six K-type thermocouples were inserted into the catalyst layer, and three exhaust ports were fabricated on the side wall along the flow direction. The exhausted gases at each port were analyzed by using gas chromatograph (GC) system. The experimental results showed that the reforming reaction occurs intensively in the upstream region and more hydrogen is obtained when the intake gas is sufficiently heated up through the enhanced steam reforming (SR) reaction. The axially increasing boundary temperature setup provided the maximally accumulated reforming efficiency of 74.8%, when the reactor was placed at the 3rd section of the furnace.

• Advances in concrete construction
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• 제11권3호
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• pp.231-238
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• 2021

The present work aims at investigating the effects of using various fine mineral additions as partial replacement to Portland cement on the tribological properties of concrete. To achieve this goal, concrete mixtures were prepared with different percentages (10, 20 and 30%) of limestone fillers (LF) and natural pozzolana (NP), and (20, 40 and 60%) of blast furnace slag (BFS). The interface yield stress (τ0) and viscous constants (η) that allow characterizing friction at the concrete-pipe wall interface were determined using a rotational tribometer. In addition, the compositions of the boundary layers that formed in the pumping pipes of the different concretes under study were also identified and analyzed. The experimental results obtained showed that the concretes studied have a linear tribological behavior that can be described by the Bingham model. Furthermore, the use of different mineral additions, especially limestone fillers and blast furnace slags, even at high rates, had a beneficial effect on the optimization of the volume of paste present in the boundary layer, which made it possible to significantly reduce the viscous constant of concrete. However, a maximum rate of 10% of natural pozzolana was recommended to achieve tribological properties that are favorable to the pumpability of concrete.

• 대한기계학회논문집B
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• 제41권8호
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• pp.553-561
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• 2017

본 연구에서는 산업용 가열 설비에 대한 연소 유동장과 복합 열전달 해석을 위하여 오픈소스 기반의 3차원 해석 시스템을 구축하고 실제 운전 중인 재가열로에 대한 해석을 통해 유용성을 확인하였다. 효율적인 가열로 전용 해석 체계를 위하여 오픈소스 OpenFOAM 라이브러리를 적용함으로써 다양한 해석 기능들을 추가로 개발할 수 있는 확장성과 상용 프로그램 도입에 비하여 경제성 측면에서도 장점들을 가지고 있다. 개발된 프로그램을 활용하여 실제 연속 아연 도금 강판 생산 공정 내의 수평형 소둔로에 대한 해석을 수행하였다. 해석 결과로부터 대상 가열 설비의 가열 성능은 고온 연소 기체에 의한 대류 보다는 복사 열전달 효과가 지배적이며, 이송되는 강판 표면으로 유입되는 복사 열전달량은 총 열전달량의 76% 수준으로 분석되었다. 현 가열로 전용 해석 시스템은 핵심적인 가열 설비 해석 기능을 포함하고 있지만, 다양한 연소 조건에 적용 가능한 난류 연소 모델과 가열로 벽면 열경계에 대한 추가적인 연구가 필요함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• 한국재료학회지
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• 제14권11호
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.