• Title/Summary/Keyword: Fundamental Circuit

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Comparative Analysis of Synthetic Memristor Emulator and M-R Mutator (합성형 멤리스터 에뮬레이터와 M-R 뮤테이터의 특성 비교)

  • Choi, Hyuncheol;Kim, Hyongsuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.98-107
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    • 2016
  • An analytical comparison of a synthetic memristor emulator and a M-R mutator-based memristor emulator has been performed. Memristor is an electrical element with the characteristic of variable resistance. It is called the fourth fundamental electrical element following resistor, capacitor, and inductor. Memristor emulator is a circuit which implements the feature of variable resistance via the composition of various electrical devices. It is an essential circuit to study memristor characteristics during the time before it is commercially available. There are two representative memristor emulators depending upon their implementation methods. One is a memristor emulator which is synthesized via combining various electrical devices and the other one is M-R mutator-based memristor emulator implemented by extracting resistance from a nonlinear device. In this paper, implementation methods of these two memristor emulators are studied and their differences are investigated by analysing their characteristics.

Design of Compensated Digital Interface Circuits for Capacitive Pressure Sensor (용량형 압력센서용 디지탈 보상 인터페이스 회로설계)

  • Lee, Youn-Hee;Sawada, Kouji;Seo, Hee-Don;Choi, Se-Gon
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.63-68
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    • 1996
  • In order to implement the integrated capacitive pressure sensors, which contains integrated interface circuits to detect the electrical output signal, several main factors that have a bad effect on the characteristics of sensors must be improved, such as parasitic capacitance effects, temperature/thermal drift, and the leakage current of a readout circuitry. This paper describes the novel design of the dedicated CMOS readout circuitry that is consists of two capacitance to frequency converters and 4 bit digital logic compensating circuits. Dividing the oscillation frequency of a sensing sensor by that of reference sensor, this circuit is designed to eliminate the thermal/temperature drift and the effect of the leakage currents, and to access a digital signals to obtain a high signal-to-noise(S/N)ratio. Therefore, the resolution of this circuit can be increased by increasing the number of the digital bits. Digital compensated circuits of this circuits, except for the C-F converters, are fabricated on a FPGA chip, and fundamental performance of the circuits are evaluated.

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A Study on Position of Six-Degrees-of-Freedom of vibration Model and Orientation Decision by Adaptive Control Method (6자유도 진동모댈의 위치 및 자세결정을 위한 적응제어기법의 적용에 관한 연구)

  • Kim, J.Y.;Song, S.K.;Han, J.H.;Oh, Y.H.;Cho, S.H.
    • Transactions of the Korean Society of Automotive Engineers
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    • v.2 no.6
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    • pp.94-101
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    • 1994
  • About vibration model of Six-degrees-of-freedom(DOF), in mass load, examined results for knowing dynamic interference and response variation is as follows; In case of putting mass load upon the object, experimented results on two-degrees-of-freedom of the translation-1 direction and the rotation-1 direction at open-loop-control system, about 0.19 arcsed in input of the translation-$0.1{\mu}m$ and $0.022{\mu}m$ on input of the rotation-0.5 arcsec, the justicse of motion equation is acknowledged as confirming the appearance of the interference-$0.022{\mu}m$. In establishing calculation of transformation matrix by using analogue circuit, as simulating results that used incomplete differentiation, interference is $1.7{\times}10^{-3}$ arcsec on input of the translation-$0.1{\mu}m$ and $1.4{\times}10^{4}{\mu}m$ on input of the rotation-0.5 arcsec in open-loop-control system. Also it is $4.2{\times}10^{-4}$ arcsec on input of the translation-$0.1{\mu}m$ and $5.6{\times}10^{-5}{\mu}m$ on input of the rotation-0.5 arcesc in closed-loop-control system. As closed-loop-control system is better than open-loop-control system, equivalent accordance is confirmed on original response. Finally, fundamental validity of this theory is acknowledged.

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Damage Analysis of Thin Steel Members with Bolt Connection Using Lamb Wave and PZT Element (Lamb파 전달을 이용한 볼트 연결된 얇은 강판부재의 손상해석)

  • Rhee, Inkyu;Kwak, Hyo-Gyoung;Kim, Jae Hong
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.26 no.4A
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    • pp.587-596
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    • 2006
  • A half portion of Korean railway bridges depends on the type of steel plate girder bridge. Since these bridges have been built in the early stage of Korean economical boom, numerous maintenance effort suffers from aging and progressive degradation issues at present. In accordance with these efforts, this paper would like to address the detailed analyses of thin steel plates with bolts in order to simulate the connection regions of steel plate girder bridge. The fundamental modal analysis, transient dynamic analysis with 3D piezoelectric element in open circuit loop and signal process with aids of TOF(time of flight) and WC(wavelet coefficient) are extensively discussed.

Wideband Class-J Power Amplifier Design Using Internal Matched GaN HEMT (내부정합된 GaN HMET를 이용한 광대역 J-급 전력증폭기 설계)

  • Lim, Eun-Jae;Yoo, Chan-Se;Kim, Do-Gueong;Sun, Jung-Gyu;Yoon, Dong-Hwan;Yoon, Seok-Hui;Rhee, Young-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.2
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    • pp.105-112
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    • 2017
  • In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.

A Study on Improvement of Storage Safety through Quality improvement of Torpedo Propulsion Battery (어뢰 추진전지 품질개선을 통한 저장안정성 향상에 관한 연구)

  • Jang, Min-Ki
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.7
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    • pp.291-298
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    • 2019
  • We describe the improvement of insulation performance and the prevention of electrolyte leakage in a single cell in order to prevent the fuming phenomenon caused by leakage of electrolyte in a lithium secondary battery in a submerged weapon (torpedo) operated in Korea. A torpedo using lithium secondary battery as a main power source (propulsion battery) can induce the heat and fuming phenomenon, which makes it inconvenient for naval equipment operation in Korea. In the simulation test, the electrolyte of some battery cells leaked in the battery pack unit, leading to a short circuit between the main power circuit and the terminal tab of the high voltage part. We analyzed the characteristics and mechanism of the lithium secondary battery during this heat generation and fuming phenomenon. In order to prevent leakage of the electrolyte in the lithium secondary battery, the design was improved via fundamental (terminal tap enhancement) and complementary (insulation block selection and installation) measures. Comparison of the performance test before and after the improvement showed that the tensile strength of the tap terminal was improved about 2 times and the withstand voltage characteristic was improved. The application of quality improvement measures resulted in no fuming even after more than 3 years of field operation. This result is expected to improve the operation and storage stability of the torpedo propulsion cell.

Effect of Desmear Treatment on the Interfacial Bonding Mechanism of Electroless-Plated Cu film on FR-4 Substrate (Desmear 습식 표면 전처리가 무전해 도금된 Cu 박막과 FR-4 기판 사이의 계면 접착 기구에 미치는 영향)

  • Min, Kyoung-Jin;Park, Young-Bae
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.625-630
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    • 2009
  • Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

Study on the Characteristic Curriculum of the Junior Technical College (전문대학 특성화와 관련한 교과과정 연구)

  • Ohm, Woo-Yong;Ryu, Jang-Ryeol
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.37 no.4
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    • pp.47-56
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    • 2000
  • Because of the junior college students' learning ability stands on a relatively low level, this research is accomplished to inspire students with further desires, considering students' learning ability and desire. The curriculum of junior college is organized with three parts(electronic communication tool, micro processer, integrated circuit design): the electronic communication tool and micro processer is carried out, and the training for the design skill on semiconductor devices will be focused. The main focus is reflected on the worldwide trend on the design engineering of semiconductor devices and considered for the market establishment on design engineers trained by the lab-oriented practice as well as fundamental of semiconductor technology.

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A New Simplified Vector Control For A High Performance Common-Arm IHCML Inverter (고성능 공통암 IHCML 인버터를 위한 새로운 벡터 제어 방식)

  • Song, Sung-Geun;Park, Sung-Jun;Nam, Hae-Kon;Kim, Kwang-Heon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.6
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    • pp.1071-1079
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    • 2007
  • In this paper, a novel space vector control method for isolated multi-level inverter using 3-phase low frequency transformers is proposed. This method is based on the simplification of the space-vector diagram of a five-level inverter using calculated table into fully programming method. The execution time of the proposed method is about same as that of the method using calculated table. Also, the proposed method is easily applied to other case level inverter. We applied this method into the 3-phase IHCML inverter using common arm. It makes possible to use a single DC power source due to employing low frequency transformers. In this inverter, the number of transformers could be reduced compare with an exiting 3-phase multi-level inverter using single phase transformer. In addition, this method generates very low harmonic distortion operation with nearly fundamental switching frequency. Finally, We tested multi-level inverter to clarify electric circuit and reasonableness through Matlab simulation and experiment by using prototype inverter.

Design and Implementation of Active Diplexer Using Asymmetrical Coupled Microstrip Lines (비대칭 결합 마이크로스트립 선로를 이용한 능동 다이플렉서의 구현)

  • 윤현보;문승찬;최원영
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.4 no.3
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    • pp.11-17
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    • 1993
  • An active diplexer can be realized by using a MESFET and 2-sections of asymmetrical coupled bandpass filter, where the admittance inverter parameters in equivalent circuit of asym- metrical coupled microstrip lines are given as a function of an fundamental design parameter of a bandpass filter. An experimental active diplexer was designed over 22 and 18 percent bandwidth centered at 9 GHz and 11 GHz respectively, and the design data was optimized by Super-Compact. The gain performance was $6.2\pm0.3$dB in each band of 8.3~9.6 GHz and 10.3~11.8 GHz The measured bandwidth of the active diplexer was closely matched to design data but measured gain was slightly lower (1.5 dB) than the designed value.

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