• Journal of the Institute of Electronics Engineers of Korea SP
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• v.43 no.5 s.311
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• pp.52-61
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• 2006

Orthogonal wavelet tansform which is generally used in image and signal processing applications has limited performance because of lack of shift invariance and low directional selectivity. To overcome these demerits complex wavelet transform has been proposed. In this paper, we present an efficient image denoising method using dual-tree complex wavelet transform and Bernoulli-Gauss prior model. In estimating hyper-parameters for Bernoulli-Gaussian model, we present two simple and non-iterative methods. We use hypothesis-testing technique in order to estimate the mixing parameter, Bernoulli random variable. Based on the estimated mixing parameter, variance for clean signal is obtained by using maximum generalized marginal likelihood (MGML) estimator. We simulate our denoising method using dual-tree complex wavelet and compare our algorithm to well blown denoising schemes. Experimental results show that the proposed method can generate good denoising results for high frequency image with low computational cost.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.126-126
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• 2014

Label-free biomolecular assay based localized surface plasmon resonance (LSPR) of noble metal nanoparticles enables simple and rapid detection with the use of simple equipment. Nanosized metal nanoparticles exhibit a strong absorption band when the incident light frequency is resonant with the collective oscillation of the electrons, which is known as the LSPR. Here we demonstrate localized surface plasmon resonance (LSPR) substrates such as plasmonic Au nanodisks fabricated by a nanoimprinting process and gold nanorod-immobilized surfaces and their applications to highly sensitive and/or label-free biosensing. To increase detection sensitivity various bioreceptors weree designed. A single chain variable fragment (scFv) was used as a receptor to bind C-reactive protein (CRP). The results of this effort showed that CRP in human serum could be quantitatively detected lower than 1 ng/ml. Aptamers, which were immobilized on gold nanorods, were used to detect mycotoxins. The specific binding of ochratoxin A (OTA) to the aptamer was monitored by the longitudinal wavelength shift of LSPR peak in the UV-Vis spectra resulting from the changes of local refractive index near the GNR surface induced by accumulation of OTA and G-quadruplex structure formation of the aptamer. According to our results, OTA could be quantitatively detected lower than 1 nM level. Additionally, aptamer-functionalized GNR substrate was quite robust and can be regenerated many times by rinsing at 70 OC to remove bound target. During seven times of washing steps, the developed OTA sensing system could be reusable. Moreover, the proposed biosensor exhibited selectivity over other mycotoxins with an excellent recovery for detection in grinded corn samples, suggesting that the proposed LSPR based aptasensor plays an important role in label-free detection of mycotoxins.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.131-134
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• 2003

[ $ZnWO_4$ ] shows excellent frequency selectivity due to its high quality factor($Q{\times}f$) at microwave frequencies. However, in order to use $ZnWO_4$ as multilayered wireless communication components, its other properties such as sintering temperature($1050^{\circ}C$), ${\tau}_f$ ($-70ppm/^{\circ}C$) and ${\varepsilon}_r(15.5)$ should be modified. In present study, $TiO_2$ and LiF were used to improve the microwave dielectric and sintering properties of $ZnWO_4$. $TiO_2$ additions to $ZnWO_4$ changed ${\tau}_f$ from negative to positive value, and also increased ${\varepsilon}_r$ due to its high ${\tau}_f$ ($+400ppm/^{\circ}C$) and ${\varepsilon}_r$(100). At 20 mol% $TiO_2$ addition, ${\tau}_f$ was controlled to near zero $ppm/^{\circ}C$ with ${\varepsilon}_r=19.4$ and $Q{\times}f=50000GHz$. However, the sintering temperature was still high to $1100^{\circ}C$. LiF addition to the $ZnWO_4+TiO_2$ mixture was greatly reduced the sintering temperature from $1100^{\circ}C$ to $850^{\circ}C$ due to liquid phase formation. Also LiF addition decreased the ${\tau}_f$ value due to its high negative ${\tau}_f$ value. Therefore, by controlling the $TiO_2$ and LiF amount, temperature stable LTCC material in the $ZnWO_4$-TiO_2-LiF$ system could be fabricated.

• 한국해양학회지
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• v.21 no.4
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• pp.236-244
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• 1986

This study was carried out for appreciable information on the proper habitats and feeding modes of some dominant polychaetes in the continental shelf of the East Sea during April, 1985. Among 95 polychaete species, we select ed 9 dominant species in terms of their occurring frequency, abundance and population density. These are Terebellides stroemi, Chaetozone setosa, Magelona japonica, Ampharete arctica, Aglaophamus sinensis, Nothria holobranchiata, Lumbrineris japonica, Myriochele gracilis, Notoproctus pacificus. Major food item s of these species are centric diatoms and detritus. The feeding modes of the the m are mainly surtace or subsurface deposit feeding, though two specters, M.holobranchiata and L. japonica, could be assumed to be potential carnivores. To a certain degree, most deposit feeders in the coarse sediments showed selectivity in feeding and tube building. The feeding mode, gut content and the tube structure, and the distribution pattern of dominant polychaetes correspond well with the habitat tharacters, e.g.the bottom topography, the source of food and the sediment composition.

• Journal of Surface Science and Engineering
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• v.48 no.6
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• pp.360-370
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• 2015

As the size of the semiconductor devices shrinks to nanometer scale, the importance of plasma etching process to the fabrication of nanometer scale semiconductor devices is increasing further and further. But for the nanoscale devices, conventional plasma etching technique is extremely difficult to meet the requirement of the device fabrication, therefore, other etching techniques such as use of multi frequency plasma, source/bias/gas pulsing, etc. are investigated to meet the etching target. Until today, various pulsing techniques including pulsed plasma source and/or pulse-biased plasma etching have been tested on various materials. In this review, the experimental/theoretical studies of pulsed plasmas during the nanoscale plasma etching on etch profile, etch selectivity, uniformity, etc. have been summarized. Especially, the researches of pulsed plasma on the etching of silicon, $SiO_2$, and magnetic materials in the semiconductor industry for further device scaling have been discussed. Those results demonstrated the importance of pulse plasma on the pattern control for achieving the best performance. Although some of the pulsing mechanism is not well established, it is believed that this review will give a certain understanding on the pulsed plasma techniques.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.41-54
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• 2002

In this study, we have analyzed the effects of the membrane layer and the bragg reflector layers on the resonance characteristics through comparing the characteristics of the membrane type FBAR (Film Bulk Acoustic Wave Resonator) and the one type bragg reflector layers with those of the ideal FBAR with top and bottom electrode contacting air by using equivalent circuit technique. It is assumed that ZnO is used for piezoelectric film, $SiO_2$ are used for membrane layer and low acoustic impedance layer, W are used for the high acoustic reflector layer and Al is used for the electrode. Each layer is considered to have a acoustic propagation loss. ABCD parameters are picked out and input impedance is calculated by converting 1-port equivalent circuit to simplified equivalent circuit that ABCD parameters are picked out possible. From the variation of resonance frequency due to the change of thickness of electrode layers, reflector layers and membrane layer it is confirmed that membrane layer and the reflector layer just under the electrode have the greatest effect on the variation of resonance frequency. From the variation of resonance properties, K and electrical Q with the number of layers, K is not much affected by the number of layers but electrical Q increases with the number of layers when the number of layers is less than seven. The electrical Q is saturated when the number of layers is large than six. The electrical Q is dependent of mechanical Q of reflector layers and membrane layer. Both ladder filter and SCF (Stacked Crystal Filters) show higher insertion loss and out-of-band rejection with the increase of the number of resonators. The insertion loss decreases with the increase of the number of reflector layers but the bandwidth is not much affected by the number of reflector layers. Ladder Filter and SCF with membrane layer show the spurious response due to spurious resonance properties. Ladder filter shows better skirt-selectivity characteristics in bandwidth but SCF shows better characteristics in insertion loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.67-67
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• 2011

Pulsed DC $BCl_3/SF_6$ 플라즈마를 사용하여 GaAs와 AlGaAs의 건식 식각을 연구하였다. 식각 공정 변수는 가스 유량 (50~100 % $BCl_3$ in $BCl_3/SF_6$), 펄스 파워 (450~600 V), 펄스 주파수 (100~250 KHz), 리버스 시간 (0.4~1.2 ${\mu}s$)이었다. 식각 공정 후 표면 단차 측정기 (Surface profiler)를 사용하여 표면의 단차와 거칠기를 분석하였다. 그 결과를 이용하여 식각률 (Etch rate), 표면거칠기 (Surface roughness), 식각 선택비 (Selectivity)와 같은 특성 평가를 하였다. 실험 후 주사 현미경 (FE-SEM, Field Emission Scanning Electron Microscopy)을 이용, 식각 후 시료의 단면과 표면을 관찰하였다. 실험 결과에 의하면 1) 18 sccm $BCl_3$ / 2 sccm $SF_6$, 500 V (Pulsed DC voltage), 0.7 ${\mu}s$ (Reverse time), 200 KHz (Pulsed DC frequency), 공정 압력이 100 mTorr인 조건에서 GaAs와 Al0.2Ga0.8As의 식각 선택비가 약 48:1로 우수한 결과를 나타내었다. 2) 펄스 파워 (Pulsed DC voltage), 리버스 시간(Reverse time), 펄스 주파수(Pulsed DC frequency)의 증가에 따라 각각 500~550 V, 0.7~1.0 ${\mu}s$, 그리고 200~250 KHz 구간에서 AlGaAs에 대한 GaAs의 선택비가 감소하게 되는 것을 알 수 있었다. 이는 척 (chuck)에 인가되는 전류와 파워를 증가시키고, 따라서 GaAs의 식각률이 크게 증가했지만 AlGaAs 또한 식각률이 증가하게 되면서 GaAs에 대한 식각 선택비가 감소한 것으로 생각된다. 3) 표면 단차 측정기와 주사전자현미경 사진 결과에서는 GaAs의 경우 10% $SF_6$ (18 sccm $BCl_3$ / 2 sccm $SF_6$)가 혼합된 조건에서 상당히 매끈한 표면 (RMS roughness < 1.0 nm)과 높은 식각률 (~0.35 ${\mu}m$/min), 수직의 식각 측벽 확보에서 매우 좋은 결과를 보여주었다. 또한 같은 공정 조건에서 AlGaAs는 식각이 거의 되지 않은 결과 (~0.03 ${\mu}m$/min)를 보여주었다. 위의 결과들을 종합해 볼 때 Pulsed DC $BCl_3/SF_6$ 플라즈마는 GaAs와 AlGaAs의 선택적 식각 공정에서 매우 우수한 공정 결과를 나타내었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.906-911
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• 2004

In this paper, a VCDRO(Voltage Control Dielectric Resonator Oscillator) applied to FMCW(Frequency Modulated Continuous Wave)Radar as stable source is implemented and constructed with a MESFET(Metal-semiconductor Field-Effect Transistor) for low noise, a dielectric resonate. of high frequency selectivity, and high Q varator diode to obtain a good phase noise performance and stable sweep characteristics. The designed circuits is simulated thrash harmonic balance simulation technique to provide the optimum performance. The measured result of a fabricated VCDRO shows that output is 2.22㏈m at 12.05GHz, harmonic suppression -30㏈c, phase noise -130㏈c at 100KHz offset, and sweep range of varator diode $\pm$18.7MHz, respectively. This oscillator will be available to FMCW Radar.

• Applied Chemistry for Engineering
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• v.9 no.6
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• pp.870-877
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• 1998

With impedance spectrum measurements, impedance was studied in the interface between sample solutions for $K^+-ion$ selective PVC membrane electrode containing neutral carriers [dibenzo-18-crown-6 (D18Cr6) and valinomycine (Val)]. Response characteristics of electrode were examined by measuring AC impedance spectra that were resulted from the chemical structure and the content of carrier, variation of plasticizer, membrane thickness, doping of base electrolytes, and concentration variation of sample solution. Transport characteristics of PVC membrane electrode were also studied. It was found that the equivalent circuit for the membrane in $K^+$ solution could be expressed by a series combination of solution resistance and a parallel circuit consisting of the bulk resistance and geometric capacitance of the membrane system. But the charge transfer resistance and Warburg resistance were overlapped a little in the low concentration and low frequency ranges. The carrier, D18Cr6 was best for electrode and impedance characteristics, and ideal electrode characteristics were appeared especially in case of doping of the base electrolyte[potassium tetraphenylborate(TPB)]. The optimum carrier content was about 3.23 wt% in case of D18Cr6 and Val. DBP was best as a plasticizer. As membrane thickness decreased the impedance characteristics was improved, but electrode characteristics were lowered for membrane thickness below the optimum. In the case of D18Cr6, the selectivity coefficients by the mixed solution method for the $K^+$ ion were the order of $NH_4{^+}>Ca^{2+}>Mg^{2+}>Na^+$.

• Journal of Energy Engineering
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• v.15 no.1 s.45
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• pp.52-59
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• 2006

This paper examined the conversion of methane to hydrogen and other higher hydrocarbons using dielectric barrier discharge with AC pulse power. Two metal electrodes of a coaxial-type plasma reactor were separated by gas gap and an alumina tube. The inner electrode was located inside the alumina tube. The alumina tube was located inside the stainless steel tube, which was used as the outer electrode. Effect of feed gas composition (methane, oxygen, argon, water and helium), flow rate, applied frequency, input volt-age on methane conversion and product distribution were studied. The major products of plasma chemical reactions were ethylene, ethane, propane, buthane, hydrogen, carbon monoxide and carbon dioxide. The increment of applied voltage and the usage of inert gas as the background (helium and argon) enhanced the selectivity of hydrocarbons and methane conversion. The addition of water in the feed stream enhanced the conversion of methane and yield of hydrogen. Higher voltage leads to higher yield of $C_2H_6,\;C_3H_8,\;C_4H_{10}$ and yield or $C_2H_2\;and\;C_2H_4$ appeared highly in lower voltage.