• 한국멀티미디어학회논문지
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• 제21권1호
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• pp.61-68
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• 2018

In this paper, we present an effective encryption algorithm for 3D printing models in the frequency domain of discrete cosine transform to prevent illegal copying, access in the secured storage and transmission. Facet data of 3D printing model is extracted to construct a three by three matrix that is then transformed to the frequency domain of discrete cosine transform. The proposed algorithm is based on encrypting the DC coefficients of matrixes of facets in the frequency domain of discrete cosine transform in order to generate the encrypted 3D printing model. Experimental results verified that the proposed algorithm is very effective for 3D printing models. The entire 3D printing model is altered after the encryption process. The proposed algorithm is provide a better method and more security than previous methods.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1291-1292
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• 2007

Recently, there were many researches for efficiency improvement of DSC. Among of these works, research of surface treatment is still a prerequisite for electron diffusion, light-harvesting and surface state of DSC.[1] Using of the surface treatment, it can be raise up porosity of $TiO_2$ nano-crystalline structure on photo-electrode. There are chemical, physical, electrical and optical methods which raise up its porosity. In this paper, we have designed and manufactured MOPA-type ultrasonic circuit (100W, frequency and duty variable). Manufactured ultrasonic circuit to use to force cavity density and power into $TiO_2$ paste. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against monolithic DSC. And it shows stability of light-harvesting from drastically change of light irradiation test.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.262-268
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• 2001

Remarkable progress has been performed in power electronics, using high frequency switching based on the improvement of power semi-conductor devices. In the other hands, it gives us serious problems, such as, insulation, increasing of the high frequency leakage current, and electric corrosion of bearing in the loaded motors driven by inverters using high frequency switching. To improve these problems, many researches have made especially on the application of soft switching technologies. From this point of view IEE-Japan had started the research groups on soft-switching technology 1997 and 1999. This paper is a survey based on the discussion in this research group with results of ARCP inverter applied for 210kVA power supply.

• 경영과정보연구
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• 제2권
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• pp.237-266
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• 1998

The purpose of this study was to analyze the differences of application level the computer programming languages in major. The method of this study is the empirical method based on theoretical one with the previous bibliographical suduies. The sample consists of 268 listed university disclosing over the period of Dec. 1. 1997 to Du. 15. 1997. The samples were 10 university in university of Seoul, Pusan, Masan City, Korea. The data were collected by questionnaire research through interview with each person. The analysis data was carried to 268 samples by using SPSS/PC for Windows Version 7.5 statistical package. Statistical methods such as frequency analysis, chi-square test, ANOVA test, correlation analysis were used to test the research questions. This paper focuses on the design of the hypothesis test show that the 2 type are significantly different in major of university students. Before the test of research questions performed it frequency analysis by using the factor score that bring each items. The research type of 2 guoups, that is, BA Group(business administration group) and NBA Group(non-business administration guoup). To summarize the result of this study is as follows ; (1) Hypothesis 1 : Concerning about computer programming language in major, the significant difference is application the present condition. (2) Hypothesis 2 : Concerning about computer programming language in major, the significant difference is application level. (3) Hypothesis 3 : Concerning about each application software in major, the significant difference is application level. According to the results of this study, it is found that (1) Hypothesis 1 related In application the present condition of computer programming language was accepted its all at 0.05 % significance level. (2) Hypothesis 2 related to application level of computer programming language was accepted its all at 0.05 % significance level. (3) Hypothesis 3 related to application level of each application software was rejected its all. at 0.05 % significance level.

• 전기학회논문지P
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• 제59권1호
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• pp.24-28
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• 2010

This paper is presented on the antenna design for notepc platform. We present the antenna with combination of electric-magnetic radiator for dual-band Wireless Local Area Network (WLAN) service and a High Speed Downlink Packet Access (HSDPA) service. Due to the limited antenna space in notepc platform, the antennas for various wireless communication service should be located at a very small area. In this paper, the magnetic-type radiator works for high frequency band (1.7 - 2.1 GHz) application and the electric-type radiator works for low frequency band (820 - 960 MHz) application. This combination produces wide-band characteristics in the high frequency band. Simulation and experimental results of input impedance and gain characteristics of the proposed antenna are presented. There are good agreements between the simulated and measured S11 and gain values.

• ETRI Journal
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• 제29권6호
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• pp.725-735
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• 2007

This paper describes a line element planar antenna with three frequency bands. To obtain broadband characteristics, a modified planar antenna that has semi-elliptical elements based on the characteristics of a line element planar antenna is proposed and analyzed by the finite difference time domain method. Return loss characteristics are discussed as functions of the eccentricity values of semi-ellipse at each element. The broadbanding of the modified planar antenna is implemented based on the results. The planar antenna with three systems (an 800 MHz band cellular phone, a third-generation cellular phone, and a 2.4 GHz band wireless LAN system) is considered as an application example.

• 통합자연과학논문집
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• 제14권2호
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• pp.50-56
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• 2021

Due to the recent increase in the mobile streaming market, mobile traffic is increasing exponentially. IMT-2020, named as the next generation mobile communication standard by ITU, is called the 5th generation mobile communication (5G), and is a technology that satisfies the data traffic capacity, low latency, high energy efficiency, and economic efficiency compared to the existing LTE (Long Term Evolution) system. 5G implements this technology by utilizing a high frequency band, but there is a problem of path loss due to the use of a high frequency band, which is greatly affected by system performance. In this paper, small cell technology was presented as a solution to the high frequency utilization of 5G mobile communication system, and furthermore, the system performance was improved by applying machine learning technology to macro communication and small cell communication method decision. It was found that the system performance was improved due to the technical application and the application of machine learning techniques.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전력기술부문
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• pp.182-184
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• 2001

This paper presents the application draft of system frequency and reserve criteria for Korean Wholesale Electricity Market. This application draft of system frequency and reserve criteria is based on frequecy, voltage control rules and technical rules for ancillary services agreements prepared by KEMA and the present conditions of KEPCO system operations and future directions.

• Journal of electromagnetic engineering and science
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• 제12권2호
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• pp.171-175
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• 2012

In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.