• Journal of the Korean Magnetics Society
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• v.21 no.5
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• pp.163-166
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• 2011

We describe modified Fowler-Nordheim (FN) field emission equation for the free-standing nanomembrane cathode, which has mechanical degrees of freedom. The derived FN equation agrees well with the experimental data. The free-standing nanomambrane cathode demonstrates its unique ability to detect large biomolecure ions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.293-298
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• 2001

EB-NMP free standing film is manufactured from NMP solution of polyaniline(emeraldine base EB). Also ES(emeraldine salt EB . HCl) film is manufactured by doping of EB-NMP film with 1 mole HCI aqueous solution. And EB-mixture films containing conductor(carbon black, graphite, Ag etc.) are prepared, In this study, electromagnetic interference shielding efficiency(EMI SE) of ES free standing film ($\sigma$=5 S/cm, t=0.14mm) is 23~25 dB in the frequency range of 10 MHz~1 GHz. ES-mixture(carbon black, graphite, Ag etc.) films, polyaniline film doped camphorsulfonic acid(CSA) show higher EMI SE(30~34 dB, 36~42 dB, 44~52 dB, 34~43 dB) property than that of ES free standing film, respectively.

• Wind and Structures
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• v.13 no.1
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• pp.83-94
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• 2010

Wind tunnel measurements on T-shaped free-standing walls and inclined free-standing walls have been carried out. Mean net pressure coefficients have been derived and compared with previous research. It was observed that the high loads at the free ends are differently distributed than those derived from the pressure coefficients for free-standing walls in EN 1991-1-4. In addition net pressure coefficients based on extreme value analysis have been obtained. The lack of correlation of the wind induced pressures at windward and leeward side result in lower values for the net pressure coefficients when based on extreme value analysis. The results of this wind tunnel study have been included in Dutch guidelines for noise barriers.

• Korean Institute of Interior Design Journal
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• no.41
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• pp.80-87
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• 2003

This paper attempts to examine the historical changes, the characteristics and the role of free-standing wall from the viewpoint of architectural composition. After modern times the wall gets free of structure and the view of formative art changes, which become a basis of the conscious use of free-standing wall. It plays a role of getting territoriality and placeness, by defining the space at the external territory and it is used as apparatus which controls circulation and orientation externally At the same time it is used as an instrument to blur the border to make mutual intersection and plays a role of introducing and controling the environment. The free-standing wall controls the architectural form to emphasize plasticity and is used to define a geometrical frame and maintain the urban context. In view of the results so far achieved, the free-standing wall is used as general vocabulary of modulating the border of space and the architectural form since modern architecture.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.14-19
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• 2000

Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.175-175
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• 2010

이전 연구에서는 사파이어 기판 위에 이종에피성장 방법으로 성장한 높은 인듐 조성의 극박 InGaN/GaN 다층 양자우물 구조를 이용한 근 자외선 (near-UV) 영역의 광원에 대하여 보고하였다. 본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 법을 이용하여 성장된 free-standing GaN 기판 위에 유기금속 화학증착법 (MOCVD) 을 이용하여 GaN 동종에피박막과 높은 인듐 조성의 InGaN/GaN 다층 양자우물을 성장하였고 그 특성을 분석하였다. Free-standing GaN 기판은 표면 조도가 0.2 nm 인 평탄한 표면을 가지며 $10^7/cm^2$ 이하의 낮은 관통전위밀도를 가진다. Freestanding GaN 기판 위에 성장 온도와 V/III 비율을 조절하여 GaN 동종에피박막을 성장하였다. 또한 100 nm 두께의 동종 GaN 박막을 성장한 후에 활성층으로 이용될 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조를 성장하였다. Free-standing GaN 기판 위에 성장된 GaN 동종에피박막과 다층 양자우물구조의 표면 형상은 주사 탐침 현미경 (scanning probe microscopy, SPM) 을 이용하여 관찰하였고 photoluminescence (PL) 측정과 cathodoluminescence (CL) 측정을 통하여 광학적 특성을 확인하였다. 사파이어 기판 위에 성장된 2 um 의 GaN을 이용하여 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물의 결함밀도는 $2.5 \times 10^9/cm^2$ 이지만 동일한 다층 양자우물구조가 free-standing GaN 기판 위에 성장되었을 경우 결함 밀도는 $2.5\;{\times}\;10^8/cm^2$로 감소하였다. Free-standing GaN 기판의 관통전위 밀도가 $10^7/cm^2$ 이하로 낮기 때문에 free-standing GaN 기판에 성장된 높은 인듐 조성의 다층 양자우물구조의 결함밀도가 GaN/sapphire 에 성장된 다층 양자우물의 결함밀도 보다 감소했음을 알 수 있다. Free-standing GaN 기판에 성장된 다층 양자 우물은 성장온도에 따라 380 nm 에서 420 nm 영역의 발광을 보이며 PL 강도도 GaN/sapphire 에 성장한 다층 양자우물의 PL 강도 보다 높은 것을 확인할 수 있다. 이것은 free-standing GaN 기판에 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조의 낮은 결함밀도로 인하여 활성층의 발광 효율이 개선된 것임을 보여준다.

• Carbon letters
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• v.27
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• pp.98-107
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• 2018

Free-standing electrodes of CuO nanorods in carbon nanotubes (CNTs) are developed by synthesizing porous CuO nanorods throughout CNT webs. The electrochemical performance of the free-standing electrodes is evaluated for their use in flexible lithium ion batteries (LIBs). The electrodes comprising CuO@CNT nanocomposites (NCs) were characterized by charge-discharge testing, cyclic voltammetry, and impedance measurement. These structures are capable of accommodating a high number of lithium ions as well as increasing stability; thus, an increase of capacity in long-term cycling and a good rate capability is achieved. We demonstrate a simple process of fabricating free-standing electrodes of CuO@CNT NCs that can be utilized in flexible LIBs with high performance in terms of capacity and cycling stability.

• PNF and Movement
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• v.18 no.3
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• pp.415-424
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• 2020

Purpose: This study aimed to compare changes in abdominal muscle thickness in different standing postures with a handheld load between subjects with and without chronic low back pain (CLBP). Methods: Twenty subjects with CLBP and 20 controls participated in this study. Ultrasound imaging was used to assess the changes in the thickness of the transverse abdominis (TrA), internal oblique (IO), and external oblique (EO) muscles. Muscle thickness in three different standing postures (standing at rest, standing with loads, standing with lifting loads) was compared with the muscle thickness at rest in the supine position and was expressed as a percentage of change in the thickness of the muscle. Results: While standing with loads, the change in IO muscle thickness in the CLBP patients increased more significantly than in the pain-free controls (p < 0.05). The standing with lifting loads posture showed a significant increase in the change in thickness of the TrA compared with the standing with loads posture (p < 0.05). In addition, the standing with lifting loads posture showed a significant decrease in the change in the thickness of the EO when compared with the standing with loads posture (p < 0.05). Conclusion: The automatic activity of the IO muscle in subjects with CLBP increased more than that of the pain-free controls in the standing with loads posture. These findings suggest that IO muscle function may be altered in those with CLBP while standing with loads. Additionally, TrA the activation level was found to be associated with increased postural demand caused by an elevated center of mass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.958-962
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• 2002

This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.

• Earthquakes and Structures
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• v.7 no.6
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• pp.1187-1221
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• 2014

The uplifting and rocking of slender, free-standing structures when subjected to ground shaking may limit appreciably the seismic moments and shears that develop at their base. This high-performance seismic behavior is inherent in the design of ancient temples with emblematic peristyles that consist of slender, free-standing columns which support freely heavy epistyles together with the even heavier frieze atop. While the ample seismic performance of rocking isolation has been documented with the through-the-centuries survival of several free-standing ancient temples; and careful post-earthquake observations in Japan during the 1940's suggested that the increasing size of slender free-standing tombstones enhances their seismic stability; it was George Housner who 50 years ago elucidated a size-frequency scale effect that explained the "counter intuitive" seismic stability of tall, slender rocking structures. Housner's 1963 seminal paper marks the beginning of a series of systematic studies on the dynamic response and stability of rocking structures which gradually led to the development of rocking isolation-an attractive practical alternative for the seismic protection of tall, slender structures. This paper builds upon selected contributions published during this last half-century in an effort to bring forward the major advances together with the unique advantages of rocking isolation. The paper concludes that the concept of rocking isolation by intentionally designing a hinging mechanism that its seismic resistance originates primarily from the mobilization of the rotational inertia of its members is a unique seismic protection strategy for large, slender structures not just at the limit-state but also at the operational state.