• Title/Summary/Keyword: Free silicon

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Hole Selective Contacts: A Brief Overview

  • Sanyal, Simpy;Dutta, Subhajit;Ju, Minkyu;Mallem, Kumar;Panchanan, Swagata;Cho, Eun-chel;Cho, Young Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • v.7 no.1
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    • pp.9-14
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    • 2019
  • Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

Time-dependent buckling analysis of SiO2 nanoparticles reinforced concrete columns exposed to fire

  • Bidgoli, M. Rabani;Saeidifar, M.
    • Computers and Concrete
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    • v.20 no.2
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    • pp.119-127
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    • 2017
  • Time-dependent buckling of embedded straight concrete columns armed with Silicon dioxide($SiO_2$) nano-particles exposed to fire is investigated in the present study for the fire time. The column is simulated mathematically with Timoshenko beam model. The governing mass conservation equations to describe heat and moisture transport in concrete containing free water, water vapor, and dry air in conjunction with the conversion of energy are considered. The characteristics of the equivalent composite are determined using Mori-Tanaka approach. The foundation around the column is simulated with spring and shear layer. Employing nonlinear strains-displacements, energy methods and Hamilton's principal, the governing equations are derived. Differential quadrature method (DQM) is used in order to obtain the critical buckling load and critical buckling time of structure. The influences of volume percent of $SiO_2nano-particles$, geometrical parameters, elastic foundation and concrete porosity are investigated on the time-dependent buckling behaviours of structure. Numerical results indicate that reinforcing the concrete column with $SiO_2nano-particles$, the structure becomes stiffer and the critical buckling load and time increase.

Transmittance and work function enhancement of RF magnetron sputtered ITO:Zr films for amorphous/crystalline silicon heterojunction solar cell

  • Kim, Yongjun;Hussain, Shahzada Qamar;Kim, Sunbo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.295-295
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    • 2016
  • Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

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Influence of transient surface hydrogen on Aluminum catalyzed Silicon nanowire growth

  • Sin, Nae-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.125.2-125.2
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    • 2016
  • Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

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Effect of non-uniform magnetic field on the thermal behavior and mass transfer in magnetohydrodynamic Czochralski crystal growth of silicon (Magnetic Czochralski 실리콘 단결정 성장에서 열 및 유체유동과 질량전달에 미치는 비균일 자장의 효과)

  • 김창녕
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.555-562
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    • 1998
  • Under the influence of non-uniform magnetic field, melt flow in steady state and oxygen concentration in unsteady state are numerically investigated. The strength of the applied characteristic magnetic fields are B=0.1T, 0.2T, and 0.3T, respectively. The buoyancy effects due to the crucible wall heating and the thermocapillary effects due to the surface tention at the free surface are suppressed differentially by the non-uniform magnetic fields. As the intensity of characteristic magnetic fields is increasing, the recirculation region in the meridional plane is moving toward the growing crystal, and is diminishing. The oxygen concentration on the growing surface of crystals is decreasing and the uniformity of the oxygen concentration is increasing as the intensity of the magnetic fields is increasing.

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Effect of crystal and crucible rotations on the mass transfer in magnetohydrodynamic Czochralski crystal growth of silicon (자기장이 가하여진 초크랄스키 실리콘 단결정 성장에서 질량전달에 미치는 성장결정과 도가니의 회전효과)

  • 김창녕
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.536-547
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    • 1997
  • For various angular velocities of crucible and crystal, the characteristics of melt flows, temperatures and concentrations of oxygen are numerically studied in the Czochralski furnace with a uniform axial magnetic field. Buoyancy effect due to the heating of crucible wall and thermocapillary effect due to the temperature gradient at the free surface, can be differentiably suppressed by the centrifugal forces due to the rotations of the crucible and crystal. The most important factor which yields the centrifugal forces is the rotation velocity of the crucible, that influences the fields of velocities, temperatures and concentrations. In the case that the crucible rotation velocity is not high, the rotations of the crystal gives rise to the centrifugal forces effectively.

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Design and Strength Evaluation of an Anodically Bonded Pressurized Cavity Array for Wafer-Level MEMS Packaging (기판단위 밀봉 패키징을 위한 내압 동공열의 설계 및 강도 평가)

  • Gang, Tae-Gu;Jo, Yeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.1
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    • pp.11-15
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    • 2001
  • We present the design and strength evaluation of an anodically bonded pressurized cavity array, based on the energy release rate measured from the anodically bonded plates of two dissimilar materials. From a theoretical analysis, a simple fracture mechanics model of the pressurized cavity array has been developed. The energy release rate (ERR) of the bonded cavity with an infinite bonding length has been derived in terms of cavity pressure, cavity size, bonding length, plate size and material properties. The ERR with a finite bonding length has been evaluated from the finite element analysis performed for varying cavity and plate sizes. It is found that, for an inter-cavity bonding length greater than the half of the cavity length, the bonding strength of cavity array approaches to that of the infinite plate. For a shorter bonding length, however, the bonding strength of the cavity array is monotonically decreased with the ratio of the bonding length to the cavity length. The critical ERR of 6.21J/㎡ has been measured from anodically bonded silicon-glass plates. A set of critical pressure curves has been generated for varying cavity array sizes, and a design method of the pressurized cavity array has been developed for the failure-free wafer-level packaging of MEMS devices.

A Study on the Etching Characteristics of $YMnO_3$ Thin Films in High Density $Cl_2/Ar$ Plasma (고밀도 $Cl_2/Ar$ 플라즈마를 이용한 $YMnO_3$ 박막의 식각 특성에 관한 연구)

  • 민병준;김창일;장의구
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.21-24
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    • 2000
  • Ferroelectric YMnO$_3$thin films are excellent dielectric materials for high integrated ferroelectric random access memory (FRAM) with metal-ferroelectric-silicon field effect transistor (MFSFET) structure. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$thin films is 285 $\AA$/min under Cl$_2$/Ar of 10/0, 600 W/-200 V and 15 mTorr. The selectivities of YMnO$_3$over CeO$_2$and $Y_2$O$_3$are 2.85, 1.72, respectively. The results of x-ray photoelectron spectroscopy (XPS) reflect that Y is removed dominantly by chemical reaction between Y and Cl, while Mn is removed more effective by Ar ion bombardment than chemical reaction. The results of secondary ion mass spectrometer (SIMS) were equal to these of XPS. The etch profile of the etched YMnO$_3$film is approximately 65$^{\circ}$and free of residues at the sidewall.

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Vibration and damping behaviors of symmetric layered functional graded sandwich beams

  • Demir, Ersin
    • Structural Engineering and Mechanics
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    • v.62 no.6
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    • pp.771-780
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    • 2017
  • In this study, free vibration and damping behaviors of multilayered symmetric sandwich beams and single layered beams made of Functionally Graded Materials were investigated, experimentally and numerically. The beams were composed of Aluminum and Silicon Carbide powders and they were produced by powder metallurgy. Three beam models were used in the experiments. The first model was isotropic, homogeneous beams produced by using different mixing ratios. In the second model, the pure metal layers were taken in the middle of the beam and the weight fraction of the ceramic powder of each layer was increased towards to the surfaces of the beam in the thickness direction. In the third model, the pure metal layers were taken in the surfaces of the beam and the weight fraction of the ceramic powder of each layer was increased towards to middle of the beam. Then the vibration tests were performed. Consequently, the effects of stacking sequence and mixing ratio on the natural frequencies and damping responses of functionally graded beams were discussed from the results obtained. Furthermore, the results obtained from the tests were supported with a finite-element-based commercial program, and it was found to be in harmony.

IEEE 1500 Wrapper Design Technique for Pre/Post Bond Testing of TSV based 3D IC (TSV 기반 3D IC Pre/Post Bond 테스트를 위한 IEEE 1500 래퍼 설계기술)

  • Oh, Jungsub;Jung, Jihun;Park, Sungju
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.1
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    • pp.131-136
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    • 2013
  • TSV based 3D ICs have been widely developed with new problems at die and IC levels. It is imperative to test at post-bond as well as pre-bond to achieve high reliability and yield. This paper introduces a new testable design technique which not only test microscopic defects at TSV input/output contact at a die but also test interconnect defects at a stacked IC. IEEE 1500 wrapper cells are augmented and through at-speed tests for pre-bond die and post-bond IC, known-good-die and defect free 3D IC can be massively manufactured+.