• Transactions of Materials Processing
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• v.8 no.3
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• pp.233-233
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• 1999

To investigate the effect of tungsten addition on mechanical properties, we prepared refractory (62χ)Nb-18Si-l00Mo-l0Ti-χW (χ=0, 5, 10 and 15 mol.%) in-situ composites by the conventional arc-casting technique, and then explored the microstructure, hardness and elastic modulus at ambient temperature and tensile properties at 1670 K. The microstructure consists of relatively fine (Nb, Mo, W, Ti)/sub 5/Si₃, silicide and a Nb solid solution matrix, and the fine eutectic microstructure becomes predominant at a Si content of around 18 mol.%. The hardness of (Nb, Mo, W, Ti(/sub 5/Si₃, silicide in a W-free sample is 1680 GPa, and goes up to 1980 GPa in a W 15 mol.% sample. The hardness, however, of Nb solid solution does not exhibit a remarkable difference when the nominal W content is increased. The elastic modulus shows a similar tendency to the hardness. The optimum tensile properties of the composites investigated are achieved at W 5 mol.% sample, which exhibits a relatively good ultimate strength of 230 MPa and an excellent balance of yield strength of 215 MPa, and an elongation of 3.7%. The SEM fractography generally indicates a ductile fracture in the W-free sample, and a cleavage rupture in W-impregnated ones.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.673-679
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• 1994

$^1H$ NMR spectra of imidazole, 2-and 4(5)-methylimidazole, histamine, L-histidine, L-histidine methyl ester, N${\alpha}$-acetyl-L-histidine, and L-carnosine coordinated to the paramagnetic undecatungstocobalto(II)silicate ($SiW_{11}Co$) and undecatungstonickelo(II)silicate ($SiW_{11}Ni$) anions are reported. For these complexes the ligand exchange is slow on the NMR time scale and the pure resonance lines of the free ligand and the complexes have been observed separately at room temperature. Two different complexes are formed, depending upon which nitrogen atom of the imidazole ring is coordinated to the cobalt or nickel ion of $SiW_{11}M$. Thus the NMR spectrum of a $D_2O$ solution containing a ligand and $SiW_{11}M$ consists of three sets of lines originating from the free ligand and two complexes. All NMR lines of the $SiW_{11}Co$ complexes have been assigned unequivocally using the saturation transfer technique. The temperature dependence of some spectra are also reported. The NMR spectra of some complexes show that the internal rotation of the substituent on the imidazole ring is hampered by the heteropolyanion moiety even at room temperature.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.507-514
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• 1993

The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

• Journal of the Korean institute of surface engineering
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• v.51 no.3
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.455-461
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• 2015

Porous ceramics with tailored pore size and shape are promising materials for the realization of a number of functional and structural properties. A novel method has been reported for the investigation of the role of SiC in the formation of $SiO_2$ foams by colloidal wet processing. Within a suitable pH range of 9.9 ~ 10.5 $SiO_2$, particles were partially hydrophobized using hexylamine as an amphiphile. Different mole ratios of the SiC solution were added to the surface modified $SiO_2$ suspension. The contact angle was found to be around $73^{\circ}$, with an adsorption free energy $6.8{\times}10^{-12}J$. The Laplace pressure of about 1.25 ~ 1.6 mPa was found to correspond to a wet foam stability of about 80 ~ 85%. The mechanical and thermal properties were analyzed for the sintered ceramics, with the highest compressive load observed at the mole ratio of 1:1.75. Hertzian indentations are used to evaluate the damage behavior under constrained loading conditions of $SiO_2$-SiC porous ceramics.

• Membrane and Water Treatment
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• v.10 no.5
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• pp.353-360
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• 2019

ZSM-5 membrane was prepared on tubular macroporous ${\alpha}$-alumina support using a different synthesis route. The effects of organic template agent and Si/Al ratio of the synthesis gel on morphology, structure, and separation performance of the ZSM-5 membrane used for dehydration of isopropanol were investigated. High water perm-selectivity ZSM-5 membrane with a thickness of about $3.0{\mu}m$ and a low Si/Al ratio of 10.1 was successfully prepared from organotemplate-free synthesis gel with a molar composition of $SiO_2$ : $0.050Al_2O_3$ : $0.21Na_2O$ : NaF : $51.6H_2O$ at $175^{\circ}C$ for 24 h. The ZSM-5 membrane exhibited high pervaporation performance with a flux of $3.92kg/(m^2{\cdot}h)$ and corresponding separation factor of higher than 10,000 for dehydration of 90 wt.% isopropanol/water mixture at $75^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.128-128
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• 2012

We investigated the atomic and electronic properties of graphene grown by Pd silicidation and intercalation using LEED, STM, and ARPES. Pd was deposited on the 6H-SiC(0001) surface at RT. The formation of Pd silicide gives rise to breaking of Si-C bonds of the SiC crystal, which enables to release C atoms at low temperature. The C atoms are transformed into graphene from $860^{\circ}C$ according to the LEED patterns as a function of annealing temperature. Even though the graphene spots were observed in the LEED pattern and the Fourier transformed STM images after annealing at $870^{\circ}C$, the topography images showed various superstructures so that graphene is covered with Pd silicide residue. After annealing at $950^{\circ}C$, monolayer graphene was revealed at the surface. The growth of graphene is not limited by surface obstacles such as steps and defects. In addition, we observed that six protrusions consisting of the honeycomb network of graphene has same intensity meaning non-broken AB-symmetry of graphene. The ARPES results in the vicinity of K point showed the non-doped linear ${\pi}$ band structure indicating monolayer graphene decoupled from the SiC substrate electronically. Note that the charge neutrality of graphene grown by Pd silicidation and intercalation was sustained regardless of annealing temperature in contrast with quasi-free- standing graphene induced by H and Au intercalation. Further annealing above $1,000^{\circ}C$ accelerates sublimation of the Pd silicide layer underneath graphene. This results in appearance of the $(6r3x6r3)R30^{\circ}$ structure and dissolution of the ${\pi}$ bands for quasi-free-standing graphene.

• Transactions of Materials Processing
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• v.8 no.5
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• pp.491-497
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• 1999

The effect of partial squeeze on the quality of casting products in the vacuum die casting was investigated to make defect free casting products with excellent mechanical properties. The partial squeeze and vacuum die casting process was industrially implemented in making reaction shaft support which was made of a hypereutectic Al-15%Si alloy. To combine squeezing and vacuum effects, the plunger injection system was designed and attached on the chill vent type vacuum machinery system. The combination of vacuum effect before injection and partial squeezing effect after injection resulted in defect free die casting products. The uniform distribution of fine eutectic and proeutectic Si obtained from trial process also provided excellent mechanical properties.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.1-10
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• 1990

Polysilane derivatives are attracting considerable attention as a new class of material since 1980. The preparation methods of low molecular weight, cyclic, and high molecular weight polysilane derivatives are described, and also photochemistry characteristics for silicon-silicon single bond and for the nature of the substituent on silicon backbone are discussed. Polysilanes may be used as a precursors to silicon carbide fiber, as photoresist in microelectronics, as photoconductor, and as photoinitatior for free radical polymerization.