• Title/Summary/Keyword: Formation free energy

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Design and Optimization for the Windowless Target of the China Nuclear Waste Transmutation Reactor

  • Cheng, Desheng;Wang, Weihua;Yang, Shijun;Deng, Haifei;Wang, Rongfei;Wang, Binjun
    • Nuclear Engineering and Technology
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    • v.48 no.2
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    • pp.360-367
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    • 2016
  • A windowless spallation target can provide a neutron source and maintain neutron chain reaction for a subcritical reactor, and is a key component of China's nuclear waste transmutation of coupling accelerator and subcritical reactor. The main issue of the windowless target design is to form a stable and controllable free surface that can ensure that energy spectrum distribution is acquired for the neutron physical design when the high energy proton beam beats the lead-bismuth eutectic in the spallation target area. In this study, morphology and flow characteristics of the free surface of the windowless target were analyzed through the volume of fluid model using computational fluid dynamics simulation, and the results show that the outlet cross section size of the target is the key to form a stable and controllable free surface, as well as the outlet with an arc transition. The optimization parameter of the target design, in which the radius of outlet cross section is $60{\pm}1mm$, is verified to form a stable and controllable free surface and to reduce the formation of air bubbles. This work can function as a reference for carrying out engineering design of windowless target and for verification experiments.

Silicide Formation by Solid State Diffusion in Mo/Si Multilayer Thin Films (Mo/Si 다층박막에서의 고상확산에 의한 실리사이드 생성에 관한 연구)

  • 지응준;곽준섭;심재엽;백홍구
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.507-514
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    • 1993
  • The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

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Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate

  • Simonyan, Arpine K.;Gambaryan, Karen M.;Aroutiounian, Vladimir M.
    • Advances in nano research
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    • v.5 no.4
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    • pp.303-311
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    • 2017
  • The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

The Study on the Physicochemical Properties of Fluid under High Pressure (Ⅱ). The Effect of Pressure and Temperature on the Hexamethyl Benzene-Iodine Charge Transfer Complex in n-Hexane

  • Kwun Oh Cheun;Kim Jeong Rim
    • Bulletin of the Korean Chemical Society
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    • v.6 no.4
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    • pp.186-191
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    • 1985
  • The effect of pressure and temperature on the stabilities of the charge transfer complexes of hexamethyl benzene with iodine in n-hexane has been investigated by UV-spectrophotometric measurements. In this experiment the absorption spectra of mixed solutions of hexamethyl benzene and iodine in n-hexane were measured at 25, 40 and $60^{\circ}C$ under 1,200, 600, 1200 and 1600 bar. The equilibrium constant of the complex formation was increased with pressure while being decreased with temperature raising. Changes of volume, enthalpy, free energy and entropy for the formation of the complexes were obtained from the equilibrium constants. The red shift at higher pressure, the blue shift at higher temperature and the relation between pressure and oscillator strength were discussed by means of thermodynamic functions. In comparison with the results in the previous studies, it can be seen that the pressure dependence of oscillator strength has a extremum behavior in durene as the variation of ${\Delta}H$ or ${\Delta}S$ with the number of methyl groups of polymethyl benzene near atmospheric pressure in the previous study. The shift or deformation of the potential in the ground state and in the excited state of the complexes formed between polymethyl benzene and iodine was considered from the correlation between the differences of the electron transfer energies and the differences of free energies of the complex formation for the pressure variation.

Thermodynamics for Formation of Each Stable Single Phase in BSCCO Thin Films

  • Yang, Sung-Ho;Park, Yong-Pil;Kim, Gwi-Yeol
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.104-105
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    • 2000
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$_{sub}$, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$_{sub}$ and PO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$_{sub}$ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS which are related with Gibbs'free energy change for single Bi2212 or Bi2223 phase are performed.ormed.i2212 or Bi2223 phase are performed.

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Thermodynamics for Formation of Each Stable Single Phase in Bi-superconductor Thin Films

  • Park, Yong-Pil;Kim, Gwi-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.64-68
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    • 2001
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\_$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO phases appeared against T$\_$sub/ and PO$_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable phases depending on T$\_$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

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Analysis of Thermodynamic Conditions for Formation of Single Phase in Bi-superconductor Thin Films (Bi 초전도 박막에서 단일상 형성을 위한 열역학 조건 분석)

  • Ahn, Joon-Ho;Park, Yong-Pill;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.304-307
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    • 2001
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $PO_3$. The correlation diagrams of the BSCCO phases appeared against $T_{sub}$ and $PO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi220l and Bi2223 phases as well as Bi2212 one come out as stable phases depending on $T_{sub}$ and $PO_3$. From these results, the thermodynamic evaluations of ${\Delta}H$ and ${\Delta}S$ S, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

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Thermodynamic Conditions for Formation of Single Phase in BSCCO Thin Films (BSCCO 박막에서 단일상 형성을 위한 열역학 조건)

  • 이동규;박용필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.173-177
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    • 2002
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCOphases with T$\sub$sub/ and pO$_3$ are established in the 2212 and 2223 phases come out as stable phases depending on T$\sub$sub/ and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs\` free energy change for single Bi2212 or Bi2223 phase, were performed.

Analysis of Thermodynamics for Formation of Single Phase in Bi-superconducting Thin Films (Bi 초전도 박막에서 단일상 형성을 위한 열역학 분석)

  • 천민우;박용필
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.05a
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    • pp.623-626
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    • 2002
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, Tsub, and ozone gas pressures, pO$_3$. The correlation diagrams of the BSCCO phases with Tsub and pO$_3$are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputterina Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and pO$_3$. From these results, the thermodynamic evaluation of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

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Analysis of Thermodynamic Conditions for Formation of Single Phase in Bi-superconductor Thin Films (Bi 초전도 박막에서 단일상 형성을 위한 열역학 초건 분석)

  • 안준호;박용필;김정호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.304-307
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    • 2001
  • High quality BSCCO thin films have been fabricated by means of an ion beam sputtering at various substrate temperatures, T$\sub$sub/, and ozone gas pressures, PO$_3$. The correlation diagrams of the BSCCO Phases appeared against T7ub and PO3 are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 phases as well as Bi2212 one come out as stable Phases depending on T$\sub$sub/ and PO$_3$. From these results, the thermodynamic evaluations of ΔH and ΔS, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase are performed.

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