• Title/Summary/Keyword: Forcal Plane

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An Improved Reticle Seeker Using the Segmented Forcal Plane Array (segmented Focal Plane Array를 이용한 개선된 레티클 탐색기)

  • 홍현기;한성현;최종수
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.10
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    • pp.2670-2678
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    • 1996
  • Reticle seekers temporally modulate target location onto the incoming spatial signal. When large or multiple targets are present in the FOV, however, it is hard to precisely modulate the incoming target signal by the relicle. To solve this loss of modulatoin depth problem, we present an improved retical seeker using the segmented focal plane array(FPA). The new reticle system uses the normalized difference as well as the modulated signal of each detector output in the segmented FPA. In simulation, we have ascertained the proposed system can make an effective analysis and tracking for multiple or large targets.

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Control of Focal Plane Compensation Device for Image Stabilization of Small Satellite Camera (소형 위성 카메라의 영상안정화를 위한 초점면부 보정장치의 제어)

  • Kang, Myoungsoo;Hwang, Jaihyuk;Bae, Jaesung
    • Journal of Aerospace System Engineering
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    • v.10 no.1
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    • pp.86-94
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    • 2016
  • In this paper, position control of focal plane compensation device using piezoelectric actuator is conducted. The forcal plane compensation device installed on earth observation satellite camera compensates micro-vibration from reaction wheels. In this study, four experimental models of the open-loop compensation device are derived using MATLAB system identification toolbox in the input range of 0~50Hz. Subsequently, the PID controller for each model is designed and the performance test of each controller is conducted through MATLAB/Simulink. According to frequency response analysis of the closed-loop compensation device system, the PID controller designed for 38~50Hz input range has enough tracking performance for the whole 0~50Hz input range. The maximum output error is about $1{\mu}m$ for the input range. The simulation results has been verified by the experimental method.

Surface measurement using Confocal principle (공초점 원리를 이용한 표면 현상 측정)

  • 송대호;유원제;강영준;김경석
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.51-54
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    • 2000
  • The traditional surface measuring method using confocal principle requires much time to measure an object surface since it is a scanning tool. In this paper, the upgraded confocal microscope is introduced. It is also a scanning tool but it requires 2D-scanning while the traditional one requires 3D-scanning. It means the time for measuring is considerably reduced. In addition, the measuring system is configured to increase the efficiency of beam. He-Ne laser whose frequency is 632.8nm is used for the laser source. An example of measuring result through the upgraded confocal microscope is showed.

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Fabrication of 64x1 linear array infrared detector using Hg1-xCdxTe (Hg1-xCdxTe를 이용한 64x1 선형 적외선 감지 소자 제작)

  • Kim, Jin-Sang;Suh, Sang-Hee
    • Journal of Sensor Science and Technology
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    • v.18 no.2
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    • pp.135-138
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    • 2009
  • $64{\times}1$ forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate (MBE법으로 성장된 CdTe(211)/Si 기판을 이용한 MOVPE HgCdTe 박막의 특성 향상)

  • Kim, Jin-Sang;Suh, Sang-Hee;Sivananthan, S.
    • Journal of Sensor Science and Technology
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    • v.12 no.6
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    • pp.282-288
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    • 2003
  • We report the growth of HgCdTe by metal organic vapor phase epitaxy (MOVPE), using (211)B CdTe/Si substrates grown by molecular beam epitaxy (MBE). The surface morphology of these films is very smooth with hillock free. The etch pit densities (EPD) and full widths at half maximum (FWHM) of x-ray rocking curves exhibited that the crystalline quality of HgCdTe epilayer on MBE grown CdTe/Si was improved compare to HgCdTe on GaAs substrate. The Hall parameters of undoped HgCdTe layers on CdTe/Si showed n-type behavior with carrier concentration of $8{\times}10^{14}/cm^3$ at 77K. But HgCdTe on GaAs showed p-type conductivity due to in corporation of p-type impurities during GaAs substrate preparation. It is thought that these results are applicable for large area HgCdTe forcal plane arrays of $1024{\times}1024$ format and beyound.