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http://dx.doi.org/10.5369/JSST.2009.18.2.135

Fabrication of 64x1 linear array infrared detector using Hg1-xCdxTe  

Kim, Jin-Sang (Thin Film Materials Research Center, Korea Institute of Science and Technology)
Suh, Sang-Hee (Center for Nanostructured Materials Technology, Korea Institute of Science and Technology)
Publication Information
Journal of Sensor Science and Technology / v.18, no.2, 2009 , pp. 135-138 More about this Journal
Abstract
$64{\times}1$ forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.
Keywords
HgCdTe; IR detector; MOCVD;
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1 Antoni Rogalski, 'Heterostructure infrared photovoltaic detectors' Infrared Physics & Technology, vol. 41, pp. 213-238, 2000   DOI   ScienceOn
2 김병혁, 윤난영, 이희철, 김충기, 응용물리, 제11권, S175, 1998
3 허옥명, 김태훈, 권정현, 정민석, 임남수, 손옥희, 한석룡, 응용물리, 제12권, S62, 1999
4 J. Tunnicliffe, S. J. C. Irvine, O. D. Dosser and J. B. Mullin, 'A new MOVPE technique for the growth of highly uniform CMT', J. Crystal Growth vol. 68, pp. 245-253, 1984   DOI   ScienceOn
5 S-H Suh, J-H Song, and S-W Moon, 'Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe/GaAs with good electrical properties', J. Crystal Growth, vol. 159, pp. 1132-1135, 1996.   DOI   ScienceOn
6 G. N. Pain, C. Sandford, and G. K. G. Smith, 'Low temperature MOCVD of $Hg_1_xCd_x$ Te on 311, 511, 711 and shaped GaAs', J. Crystal Growth, vol. 107, pp. 610-620, 1991   DOI   ScienceOn