• 한국방사성폐기물학회:학술대회논문집
• /
• 한국방사성폐기물학회 2004년도 학술논문집
• /
• pp.32-42
• /
• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• 한국분말재료학회지
• /
• 제19권4호
• /
• pp.285-290
• /
• 2012

The present study was focused on the analysis of the electric and thermal properties of spark plasma sintered $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric material. The crystal structure, microstructure, electric and thermal properties of the sintered body were evaluated by measuring XRD, SEM, electric resistivity, Hall effect and thermal conductivity. The $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic crystal structure. The c-axis of the $Bi_{0.5}Sb_{1.5}Te_3$ crystal aligned in a parallel direction with applied pressure during spark plasma sintering. The degree of the crystal alignment increased with increasing sintering temperature and sintering time. The electric resistivity and thermal conductivity of the $Bi_{0.5}Sb_{1.5}Te_3$ sintered body showed anisotropic characteristics result from crystal alignment.

• 한국분말재료학회지
• /
• 제14권5호
• /
• pp.292-297
• /
• 2007

The present study was focused on the synthesis of a $TiB_2$ dispersed copper matrix composite material by the combination of the mechanical milling and plasma activated sintering processes. The $Cu/TiB_2$ mixed powder was prepared by the combination of the mechanical milling and reduction processes using the copper oxide and titanium diboride powder as the raw material. The synthesized $Cu/TiB_2$ mixed powder was sintered by the plasma activated sintering process. The hardness and electric conductivity of the sintered bodies were measured using micro vickers hardness and four probe method, respectively. The relative density of $Cu/TiB_2$ composite material sintered at $800^{\circ}C$ showed about 98% of theoretical density. The $Cu-1vol%TiB_2$ composite material has a hardness of about 130Hv and an electric conductivity of about 85% IACS. The hardness and electric conductivity of $Cu-3vol%TiB_2$ composite material were about 140 Hv and about 45% IACS, respectively.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
• /
• pp.176-180
• /
• 2002

During the last two decades the laser beam has progressed from a sophisticated laboratory apparatus to an adaptable and viable industrial tool. Especially, in its welding mode, the laser offers high travel speed, low distortion, and narrow fusion and heat-affected zones (HAZ). The principal obstacle to selection of a laser processing method in production is its relatively high equipment cost and the natural unwillingness of production supervision to try something new until it is thoroughly proven. The major objective of this work is focused on the combined features of gas tungsten arc and a low-power cold laser beam. Although high-power laser beams have been combined with the plasma from a gas tungsten arc (GTA) torch for use in welding as early as 1980, recent work at the Ohio State University has employed a low power laser beam to initiate, direct, and concentrate a gas tungsten arcs. In this work, the laser beam from a 7 watts carbon monoxide laser was combined with electrical discharges from a short-pulsed capacitive discharge GTA welding power supply. When the low power CO laser beam passes through a special composition shielding gas, the CO molecules in the gas absorbs the radiation, and ionizes through a process known as non-equilibrium, vibration-vibration pumping. The resulting laser-induced plasma (LIP) was positioned between various configurations of electrodes. The high-voltage impulse applied to the electrodes forced rapid electrical breakdown between the electrodes. Electrical discharges between tungsten electrodes and aluminum sheet specimens followed the ionized path provided by LIP. The result was well focused melted spots.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.67-67
• /
• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.254-254
• /
• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• 한국진공학회지
• /
• 제15권3호
• /
• pp.259-265
• /
• 2006

[ $RF-O_2$ ] plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 kV의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, $RF-O_2$ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 $RF-O_2$ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 $RF-O_2$ plasma 처리한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0 32 nm 작아졌다.

• 한국분말재료학회지
• /
• 제15권5호
• /
• pp.352-358
• /
• 2008

The present study focused on the synthesis of a bismuth-antimony-tellurium-based thermoelectric nanopowders using plasma arc discharge process. The chemical composition, phase structure, particle size of the synthesized powders under various synthesis conditions were analyzed using XRF, XRD and SEM. The powders as synthesized were sintered by the plasma activated sintering. The thermoelectric properties of sintered body were analyzed by measuring Seebeck coefficient, specific electric resistivity and thermal conductivity. The chemical composition of the synthesized Bi-Sb-Te-based powders approached that of the raw material with an increasing DC current of the are plasma. The synthesized Bi-Sb-Te-based powder consist of a mixed phase structure of the $Bi_{0.5}Sb_{1.5}Te_{3}$, $Bi_{2}Te_{3}$ and $Sb_{2}Te_{3}$ phases. This powder has homogeneous mixing state of two different particles in an average particle size; about 100nm and about 500nm. The figure of merit of the sintered body of the synthesized 18.75 wt.%Bi-24.68 wt.%Sb-56.57 wt.%Te nanopowder showed higher value than one of the sintered body of the mechanically milled 12.64 wt.%Bi-29.47 wt.%Sb-57.89 wt.%Te powder.

• Nuclear Engineering and Technology
• /
• 제35권6호
• /
• pp.507-514
• /
• 2003

Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
• /
• pp.172-175
• /
• 2002

The technique of induced discharge by a pulsed CO2 laser is being applied to control electrical discharge path, material processing, triggered lightning for protecting the power equipments. In this paper, we have investigated about the characteristics of the induced discharge at atmospheric conditions by using a plasma channel, which is produced when a pulsed CO2 laser radiation is focused by a focusing mirror as a trigger source. A plasma channel produced by laser radiation has an effect on decreasing the threshold voltage and inducing the discharge in both needle electrodes. We have confirmed a delay time between a produced plasma channel and an electrical discharge after laser radiation. We provided the decreased voltage lower than the natural discharge voltage between electrode type of needles and was induced the discharge by forming a plasma channel between them. In this research we could understand the time delay of induced discharge by laser radiation, and the characteristics of the discharge cause by the decrease in the threshold voltage, and the polarity effect by changes of plasma channel positions between two electrodes.