• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.135-137
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• 1992

• Proceedings of the Korean Vacuum Society Conference
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• 1993.02a
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• pp.14-15
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• 1993

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.679-685
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• 2014

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.473-476
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• 1997

Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1 ${\mu}{\textrm}{m}$ with high scan speed. The resolution for Si machining is determined by the selectivity of the chemical reaction rather than the laser spot size. In this study, we have obtained the maximum etch rate of 434.7 ${\mu}{\textrm}{m}$/sec with high aspect ratio. The characteristics of etched groove was investigated by scanning electron microscope(SEM) and auger electron spectroscopy(AES). It is assumed that the technique using arson ion laser is applicab1e to fabricate microstructures.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.237.1-237.1
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• 2005

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.193-199
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• 2000

As an energetic focused-ion beam(FIB) is irradiated on an inorganic amorphous thin film a majority of ions without a reflection at surface, is randomly collided with constituent atoms in thin film. but their distribution exhibits generally a systematic form of distribution. In our previous paper we reported the concentration distribution and the transmission per unit depth of Ga$^{+}$ ions penetrated int a-Se$_{75}$ /Ge$_{25}$ thin film using the LSS-based calculation. In this paper these simulated results are compared with those obtained by a conventional profile code(ISC) and a practical SIMS profile. Then the results of LSS-based calculation have only a small difference with those of code and SIMS Especially. in the case of Ga$^{+}$-FIB with an accelerating energy of 15keV. the depth of the maximum ion concentration is coincident with each other in an error range of $\pm$5$\AA$.EX>.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• Applied Microscopy
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• v.47 no.3
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• pp.171-175
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• 2017

Negative staining has been traditionally used for exosome imaging; however, the technique is limited to surface topology only and can cause staining artifacts. Therefore, to analyze the internal structure of exosomes, we employed a method of block preparation, thin sectioning, and electron tomography. In addition, an automatic serial sectioning technique with 15-nm thickness through focused ion beam was employed to observe the three-dimensional structure of exosomes of various sizes. Cryo-transmission electron microscopy revealed the near-to-native structure of exosomes.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.911-916
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• 2015

In the nano/micro scale, material properties are dependent on the size-scale of a structure. However, conventional micro-scale tensile tests have limitations to obtain reliable values of nano-scale material properties owing to residual stress and elastic slippage in the gripping/aligning process. The indenter-driven nano-scale tensile test provides prominent advantages simple testing device, high-quality nano-scale metallic specimen with negligible residual stress. In this paper, two-types of specimens (a specimen with multi-testing parts and a specimen with a single-testing part) are discussed. Focused ion beam (FIB) is employed to fabricate a nano-scale specimen from a thin nickel film. Using the specimen with a single-testing part, we obtained a nano-scale stress-strain curve of electroplated nickel film.