• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 추계학술발표회논문집(2)
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• pp.506-511
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• 1996

Research on the dry etching of UO$_2$ by using fluorine containing gas plasma is carried out for DUPIC (Direct Use of spent PWR fuel In CANDU) process which is taken into consideration for potential future fuel cycle in Korea. CF$_4$/O$_2$ gas mixture is chosen for the reactant gas and the etching rates of UO$_2$ by the gas plasma are investigated as functions of substrate temperature, plasma gas pressure, CF$_4$/O$_2$ ratio, and plasma power, It is tentatively found that the etching rate can reach 1000 monolayers/min. and the optimum CF$_4$/O$_2$ ratio is around 4:1.

• 한국의류산업학회지
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• 제15권3호
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• pp.461-466
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• 2013

Synthetic fiber materials were developed due the desire of consumers for high-quality, high-performance and comfort. A high functionality of synthetic fiber can be obtained through surface treatment that can improve hydrophilic properties, color depth after dyeing and adhesion properties. These advantages create added-value. Hydrophobic properties are an important feature to create added-value (such as hydrophilic properties). One side processing is a method of imparting to contrary function on the front and rear side. In this study, fluorine-coated Nylon/PU blended fabric was treated on only one side with a low-temperature plasma treatment; subsequently, the contact angles decreased by increasing the time and intensity of the plasma treatment. The contact angle of the untreated surface and the treated surface was different. It a showed a difference in the properties of both surfaces. Tensile strength and stiffness decreased by increasing the time and intensity of the plasma treatment. However, plasma treatment did not significantly change the tensile strength and stiffness on both surfaces of the fabric. SEM photographs showed the surface of fluorine-coated fabric and the etching surface by using plasma treatment on the fabric. Plasma treatment was confirmed not to affect the physical properties of the fabric.

• 한국결정성장학회지
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• 제14권5호
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• pp.220-225
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• 2004

Four different Fluorine-based gases ($SF_6/,NF_3, PF_5,\; and \; BF_3$) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8$\mu\textrm{m}$/min were achieved with pure $SF_6$ discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order $BF_3$ < $NF_3$< $PF_5$ < $SF_6$. This is in good correlation with the average bond energies of the gases, except for $NF_3$, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated $NF_3$, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1504-1507
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• 2009

In this paper, the etching behavior of ZnO in $CF_4$ plasma mixed Ar was investigated. Previously, the etch rate in $CF_4$/Ar plasma was reported that it is slower than that in Cl containing plasma. But, plasma included Cl atom can produce the by-product such as $ZnCl_2$. In order to solve this film contamination, no Cl containing etching gas is required. We controlled the etching parameter such as source power, substrate bias power, and $CF_4$/Ar gas ratio to acquire the fast etch rate using a ICP etcher. We accomplished the etching rate of 144.85 nm/min with the substrate bias power of 200W. As the energetic fluorine atoms were bonded with Zinc atoms, the fluoride zinc crystal ($ZnF_2$) was observed by X-ray photoelectron spectroscopy (XPS).

• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.119-126
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• 2022

MAS-based glass, which has been studied to replace the ceramic material used in the plasma etching chamber, has problems such as forming and processing due to its high melting temperature. To solve this problem, in this study, fluoride was added to the existing MAS-based glass to increase the workability in the glass manufacturing and to improve the chemical resistance to CF₄/Ar/O₂ plasma gas. Through RAMAN analysis, the structural change of the glass according to the addition of fluoride was observed. In addition, it was confirmed that high-temperature viscosity and thermal properties decreased as the fluoride content increased and plasma resistance was maintained, it showed an excellent etching rate of up to 11 times compared to quartz glass.

• 한국진공학회지
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• 제5권2호
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.38.1-38.1
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• 2009

Plasma etching is an essential process for electronic device industries and the particulate contamination during plasma etching has been interested as a big issue for the yield of productivity. The oxynitride glasses have a merit to prevent particulate contamination due to their amorphous structure and plasma etching resistance. The YSiAlON oxynitride glasses with increasing nitrogen content were manufactured. Each oxynitride glasses were fluorine-plasma etched and their plasma etching rate and surface roughness were compared with reference materials such as sapphire, alumina and quartz. The reinforcement mechanism of plasma etching resistance of the YSiAlON glasses studied by depth profiling at plasma etched surface using electron spectroscopy for chemical analysis. The plasma etching rate decreased with nitrogen content and there was no selective etching at the plasma etched surface of the oxynitride glasses. The concentration of silicon was very low due to the generation of SiF4 very volatile byproduct and the concentration of aluminum and yttrium was relatively constant. The elimination of silicon atoms during plasma etching was reduced with increasing nitrogen content because the content of the nitrogen was constant. And besides, the concentration of oxygen was very low on the plasma etched surface. From the study, the plasma etching resistance of the glasses may be improved by the generation of nitrogen related structural groups and those are proved by chemical composition analysis at plasma etched surface of the YSiAlON oxynitride glasses.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.26-29
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• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.

• 마이크로전자및패키징학회지
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• 제6권1호
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• pp.75-79
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• 1999

차세대 저유전상수 층간 절연막중 하나로 대두되고 있는 polyimide를 플라즈마에 노출시키고 이때 나타나는 전기적 특성변화를 살펴보았다. polyimide를 알루미늄 식각시 사용되고 있는 Cl-based 플라즈마에 노출시켰을때 유전상수가 약간 증가함을 볼 수 있었고, F-based 플라즈마로 $SF_{6}$ 플라즈마에 노출시켰을 때는 유전상수 감소를 볼 수 있었다. 이는 fluorine또는 chlorine bond의 생성과 관련된 것으로 FTIR과 XPS분석을 통해 확인할 수 있었다. 따라서 Cl-based 플라즈마로 알루미늄 식각 후 $SF_{6}$플라즈마에 노출시킴으로써 이 부식문제의 해결뿐만 아니라 po1yimide의 유전상수도 낮출 수 있으리라 기대된다.