• 제목/요약/키워드: Fluorescenec

검색결과 3건 처리시간 0.017초

게르마늄 나노입자의 새로운 저온 졸-겔 합성방법의 개발과 광학적 특성 (New Low Temperature Sol-gel Synthesis of Germanium Nanoparticles and Their Optical Characteristics)

  • 장승현
    • 통합자연과학논문집
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    • 제3권3호
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    • pp.157-161
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    • 2010
  • New low temperature synthesis of germanium nanoparticles obtained from the reaction of germanium tetrachloride and sodium/benzophenonewere developed. These germanium nanoparticles terminated with chloride group were oxidized in air to give hydroxy-terminated germanium nanoparticles. Germanium nanoparticle containing 20(S)-camptothecin (CPT) for a noble drug delivery system were developed. FT-IR spectroscopy was used for the characterization of vibrational absorption for the germanium nanoparticle and oxidized germanium nanoparticles containing camptothecin. Electronic absorption and fluorescence properties were measured with UV-Vis and fluorescence spectrometer. The morphology of oxidized germanium nanoparticles containing camptothecin was investigated by using TEM.

1,1-Bis(trisilyl)tetraphenylsilole의 합성 및 광학적 특성 (Synthesis and Optical Characterization of 1,1-bis(trisilyl)tetraphenylsilole)

  • 이성기;김범석
    • 통합자연과학논문집
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    • 제2권2호
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    • pp.73-77
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    • 2009
  • Silyl-containing tetraphenylsilole, 1,1-bis(trisilyl)tetraphenylsilole, has been synthesized from the reaction of dichlorotetraphenylsilole and dichlorotrisilane and characterized by using NMR spectroscopy. Bis(trisilyl)tetraphenylsilole exhibits an unusual optical property and its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima of bis(trisilyl)tetraphenylsilole was 380 nm. Bis(trisilyl)tetraphenylsilole displayed an emission band at 530 nm with an excitation wavelength of 380 nm.

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Investigation of Relationship between Etch Current and Morphology and Porosity of Porous Silicon

  • 장승현
    • 통합자연과학논문집
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    • 제3권4호
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    • pp.210-214
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    • 2010
  • Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density.