• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.11
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• pp.834-839
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• 2009

A three-dimensional computational fluid dynamics (CFD) analysis is performed to investigate flow characteristics in the anode channels and manifold of the internal reforming type molten carbonate fuel cell (MCFC). Considering the computational difficulties associated with the size and geometric complexity of the MCFC system, the polyhedral meshes that can reduce mesh connectivity problems at the intersection of the channel and the manifold are adopted and chemical reactions inside the MCFC system are not included. Through this study, the gas flow rate uniformity of the anode channels is mainly analyzed to provide basic insights into improved design parameters for anode flow channel design. Results indicate that the uniformity in flow-rate is in the range of ${\pm}$1% between the anode channels. Also, the mal-distributed inlet flow-rate conditions and the change in the size of the manifold depth have no significant effect on the flow-rate uniformity of the anode channels.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.3120-3124
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• 2008

A three-dimensional computational fluid dynamics (CFD) analysis is performed to investigate flow characteristics in the anode channels and manifold of the internal reforming type molten carbonate fuel cell (MCFC). Considering the computational difficulties associated with the size and geometric complexity of the MCFC system, the polyhedral meshes that can reduce mesh connectivity problems at the intersection of the channel and the manifold are adopted and chemical reactions inside the MCFC system are not included. Through this study, the gas flow rate uniformity of the anode channels is mainly analyzed to provide basic insights into improved design parameters for anode flow channel design. Results indicate that the uniformity in flow-rate is in the range of ${\pm}1%$ between the anode channels. Also, the mal-distributed inlet flow-rate conditions and the change in the size of the manifold depth have no significant effect on the flow-rate uniformity of the anode channels.

• International Journal of Advanced Culture Technology
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• v.10 no.3
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• pp.295-306
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• 2022

The NOx removal performance of the SCR process depends on various factors such as catalytic factors (catalyst composition, shape, space velocity, etc.), temperature and flow rate distribution of the exhaust gas. Among them, the uniformity of the flow flowing into the catalyst bed plays the most important role. In this study, the flow characteristics in the SCR reactor in the design stage were simulated using a three-dimensional numerical analysis technique to confirm the uniformity of the airflow. Due to the limitation of the installation space, the shape of the inlet duct was compared with the two types of inlet duct shape because there were many curved sections of the inlet duct and the duct size margin was not large. The effect of inlet duct shape, guide vane or mixer installation, and venturi shape change on SCR reactor internal flow, airflow uniformity, and space utilization rate of ammonia concentration were studied. It was found that the uniformity of the airflow reaching the catalyst layer was greatly improved when an inlet duct with a shape that could suppress drift was applied and guide vanes were installed in the curved part of the inlet duct to properly distribute the process gas. In addition, the space utilization rate was greatly improved when the duct at the rear of the nozzle was applied as a venturi type rather than a mixer for uniform distribution of ammonia gas.

• Journal of the Korean Society of Visualization
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• v.16 no.3
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• pp.59-64
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• 2018

Numerical simulations were carried out to analyze the flow characteristics of the wind tunnel. Flow field characteristics with velocity uniformity at the test sections are largely affected by inlet conditions of air flow rate and temperature. Axial average velocity of the flow field inside the test area was almost linearly decreased by 0.026% each 1m. The uniformity distributions of axial velocity showed the highest reduction rate of about 24% between nozzle outlets 1 ~ 2m. In addition, average velocity and the uniformity are increased with air temperature in the wind tunnel due to density variation. The results of this paper are expected to be useful for the basic design of wind tunnel and to be used for efficient design.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.6
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• pp.272-280
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• 2021

The influence of acetylene flow rates on the carburizing behavior of an AISI 4115 steel in 1 ton-class mass production-type vacuum carburizing furnace has been studied through microstructure, carbon concentration, hardness analyses. The AISI 4115 steels were carburized with various flow rates (20, 32.7, 60 l/min) and locations in the furnace (top, center, bottom) at 950℃. The acetylene flow rate played an important role in controlling the carburizing properties of carburized samples, such as effective case depth and uniformity carburizing according to location in the furnace. At an acetylene flow rate of 20 l/min, the carburized samples had a shallow average hardened layer (0.645 mm) compared to the target hardening depth (1 mm) due to low carbon flux and spatial uniformity of carburization (17.8%) in the furnace. At a flow rate of 60 l/min, the carburized samples showed an average hardened layer (1.449 mm) deeper than the target hardening depth and had the spatial uniformity of carburization (98.8%). In particular, at a flow rate of 32.7 l/min, the carburized samples had an average hardened layer (1.13 mm) close to the target hardening depth and had the highest carburizing uniformity (99.1%). As a result, an appropriate flow rate of 32.7 l/min was derived to satisfy the target hardening depth and to have spatial uniform hardened layer in the furnace.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.247-253
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• 2003

In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{\circ}$∼$55^{\circ}$ and parabolic diffuser in the range of $40^{\circ}$∼$45^{\circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.

• Journal of the Korean institute of surface engineering
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• v.23 no.3
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• pp.160-166
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• 1990

The effects of the variation of proedd varibles on the flow patterns and effects of the flow patterns on the deposition rate and uniformity in the Si-epitaxy CVD with SiH4 as the source of Si were studied through the calculation by use of control volume method. The reslts showed that the natural convection was undesirable to the uniformity of deposition rate, whose effects were decreased with the dercrese with the decrese of the pressure in the reactoor and with the increase of the flow rate. However. the excessive increase of flow rate caused the movement of the unreacted gas to the substrate. Therefore it resulted in the non-uniform depositions. The rotation of substrate was apperared to improve the uniformity. The resulte of this study could used in CVD process to design the reator and to find the optimum conditions of the process variables.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.127-130
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• 2009

The uniform gas distribution between anode channels of the indirect internal reforming type molten carbonate fuel cell (MCFC) is crucial design parameter because of the electric performance and the durability problems. A three-dimensional computational fluid dynamics (CFD) analysis is performed to investigate flow characteristics in the anode channels and manifold under different pressure drop and channel temperature conditions. The combined meshes consists of hexadral meshes in the channels and polyhedral meshes in the manifold are adopted and chemical reactions inside the MCFC system are not included because of computational difficulties associated with the size and geometric complexity of the system. Results indicate that the uniformity in flow-rate is in the range of $\pm$ 0.048 % between the anode channels when the pressure drop of anode channel is about 150 Pa. A gas flow-rate uniformity decreases as the pressure drop of anode channels decreases and as the temperature difference between indirect internal reforming (IIR) channels and anode channels increases.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.188-195
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• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.