• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.165-168
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• 2004

In this study, AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. The electrical, optical and crystallographic properties of AZO thin film with $O_2$ gas flow ratio have been investigated. The thickness, transmittance, crystal structure and resistivity of AZO thin film were measured by a-step, UV-VIS spectrometer, XRD and four-point probe, respectively. As a result AZO thin film deposited with the transmittance over 80% and the resistivity about $10^{-1}\Omega-cm$.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.81-84
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• 2010

Al-doped ZnO (AZO) films were prepared by an Ar:$H_2$ gas radio frequency (RF) magnetron sputtering system with a AZO ($2\;wt{\cdot}%\;Al_2O_3$) ceramic target at the low temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature of $300^{\circ}C$. To investigate the influence of the $H_2$ flow ratio on the properties of the AZO films, the $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% $H_2$ addition, showed a resistivity of $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. When the AZO films were annealed at $300^{\circ}C$ for 1 hour in a hydrogen atmosphere, the resistivity decreased from $11.7\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ to $5.63\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$. The lowest resistivity of $5.63\;{\times}\;10^{-4}{\Omega}{\cdot}cm$ was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the $H_2$ flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.

• 한국재료학회지
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• 제5권5호
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• pp.552-559
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• 1995

Titanium nitride films were deposited on the (100) oriented-p-type silicon substrates of RF plasma enhanced chemical vapor depositiom\n using a gaseous mixutre of TiCl$_{4}$, N$_{2}$, H$_{2}$ and Ar. The chemincal composition, structure and the rsistivituy of the films were investigated with the deposition variables such as the flow rate ratio of N$_{2}$/TiCl$_{4}$, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N$_{2}$TiCl$_{4}$ and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N$_{2}$/TiCl$_{4}$ and depostion temperature increases within proper RF pwoer, the Cl concentartion in the films decreases and the stoichiometry and crystallingiy are improved, so decreases the resistivity of the films. The films depostied under the condition of the N$_{2}$/TiCl$_{4}$ ratio of 30, the RF power of 50W and the depostion temperature of 62$0^{\circ}C$ had the Cl content of 1.5at% and the resistivity of 56㏁cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6${\mu}{\textrm}{m}$$\times$0.6${\mu}{\textrm}{m}$.

• 지구물리
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• 제5권1호
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• pp.19-27
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• 2002

장풍 폐광산의 갱내수와 폐광석 적치장에서 발생되는 산성광산폐수에 의한 침출수의 유동경로와 지화학적 특성을 알아보기 위해 지구물리탐사(자연전위, 전자탐사, 전기비저항, 탄성파굴절법)를 수행하여 그 결과를 지화학 물시료분석(pH, EC, ${SO_4}^{-2}$, 중금속 함량) 자료와 상관·분석하였다. 갱구에 수직 방향의 2개 측선에서 실시한 전기비저항 쌍극자탐사 결과 갱구에서 북서 방향으로 저비저항대가 이어지는데 이것은 갱구에서 지하로 유입된 산성광산폐수에 의한 침출수가 폐석더미와 기반암의 경계를 따라 이동하여 하천 방향으로 유입되어 나타나는 현상으로 해석된다. 이와 같은 양상은 전기비저항 수직탐사, 자연전위, 전자탐사의 반응 결과들에서 보이는 북서방향의 이상대 및 북서쪽에서 상대적으로 높은 값을 보이는 EC, 중금속함량, ${SO_4}^{-2}$의 분포와도 잘 상관된다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2010년도 춘계 학술발표회
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• pp.711-716
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• 2010

This study selected the promising area of submarine groundwater discharge(SGD) that flows into the sea following unconfined physical aquifer through the electrical resistivity survey of the land and sea. The submarine groundwater discharge(SGD) mostly flows into the sea following fracture zones, and the detection of the fault zone becomes the important guideline of groundwater discharge. Electrical sounding of the land assessed the groundwater flow and integration possibility according to the location of a fault that is a water path between underground reservoir and surface water as well as a rock fracture. In addition, the study conducted sea electrical resistivity to expand the area with high potential and selected the expected water potential groundwater area. The areas of the study were Busan and coastal areas, and for the terrain analysis, the candidates of the ground exploration were selected after analyzing lineaments that is expanded to coast direction.

• 자원환경지질
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• 제34권5호
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• pp.499-506
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• 2001

연안지역에서 해수의 지하 유동현상을 효과적이고 경제적으로 파악하기 위하여 등위치 송수신루프배열의 시간영역 전자탐사법(Time-domain Electromagnetic :TEM)을 이용한 지구물리모니터링을 적용하였다. TEM 모니터링은 전기 비저항 모니터링과 비교하여 해수유동에 대한 TEM반응의 민감도는 떨어진다. 그러나, 광범위한 조사지역에 대한 담수-해수 전이대의 공간적인 분포를 파악하는데 있어서는 측정시간을 포함한 탐사경비 그리고 현장에서 자료처리 측면에서 볼 때 매우 효율적이다.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• 한국표면공학회지
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• 제40권3호
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• pp.144-148
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• 2007

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

• 반도체디스플레이기술학회지
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• 제11권1호
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• 지질공학
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• 제32권1호
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• pp.127-142
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• 2022

This study explored the fluid transfer characteristics of simultaneous pneumatic blasting, plasma blasting, and vacuum suction (the PPV method), and assessed their effect. Chemical oxidation-an established soil remediation method-was compared as a control. Electrical resistivity surveys found that PPV reduced resistivity by about 1.5-2.5 times compared with the control group, indicating that it increased the diffusion of fluid between the injection and suction wells. Injection and suction tests comparing the injection flow rate, initial suction flow rate time, and suction flow rate showed that the PPV method offered an improvement over the existing method. Slug tests revealed that PPV increased the permeability coefficient by a greater amount than that by the control method. This study qualitatively and quantitatively confirmed that the PPV method clearly improves injection and suction efficiency by accelerating cracks in the ground and improving water permeability compared with the established chemical oxidation method.