• Title/Summary/Keyword: Flow Resistivity

Search Result 274, Processing Time 0.029 seconds

Effect of Substrate Temperature and Oxygen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films (기판온도 및 산소 분위기 가스에 따른 IGZO 투명전도성박막의 구조적 및 전기적 특성)

  • Jong Hyun Lee;Kyu Mann Lee
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.3
    • /
    • pp.96-100
    • /
    • 2023
  • We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O2 flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

  • PDF

Dependence of the Structural, Electrical, and Optical Properties of Al-doped ZnO Films for Transparent Conductors on the Process Atmosphere in Magnetron Sputtering (마그네트런 스퍼터링법으로 증착한 투명전극용 Al도핑된 ZnO의 공정 분위기에 따른 구조적, 전기적, 광학적 특성비교)

  • Yim, Keun-Bin;Lee, Chong-Mu
    • Korean Journal of Materials Research
    • /
    • v.15 no.8
    • /
    • pp.518-520
    • /
    • 2005
  • Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Effect of fluorine doping and heat treatment for SnO$_2$ thin films on electrical properties (SnO$_2$박막의 전기적 특성에 미치는 불소 doping및 열처리 효과)

  • 류득배;이수완;박정일;박광자
    • Journal of the Korean institute of surface engineering
    • /
    • v.33 no.2
    • /
    • pp.87-92
    • /
    • 2000
  • Transparent and electrical conducting tin oxide thin films were fabricated on soda lime silicate glass by thermal chemical vapour deposition technique. Thin films were deposition from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant and 1,1,1,2-tetrafluoroethane as a doping material. Electrical properties of fabricated tin oxide films were changed depending on substrate temperature, and the amount of dopant. Resistivity of tin oxide films was reduced by doping fluorine or heat treatment. Thin films can be optimized at TMT flow rate of 8sccm, oxygen flow rate of 150sccm, 1,1,1,2-tetrafluoroethane floe rate of 300sccm and substrate temperature $380^{\circ}C$. In this conditions, the lowest resistivity of tin oxide films were $9$\times$10^{-4}$ $\Omega$cm.

  • PDF

Characteristics of ITO thin Films Grown under Various Process Condition by Using Facing Target Sputtering (FTS) System (FTS장치를 이용한 다양한 공정 조건에서 제작한 ITO 박막의 특성 분석)

  • Kim, Sangmo;Keum, Min Jong;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
    • /
    • v.16 no.1
    • /
    • pp.112-115
    • /
    • 2017
  • ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

  • PDF

A study of Compositional range of Ti-Si-N films for the ULSI diffusion barrier layer (ULSI 확산억제막으로 적합한 Ti-Si-N의 조성 범위에 관한 연구)

  • 박상기;강봉주;양희정;이원희;이은구;김희재;이재갑
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.3
    • /
    • pp.321-327
    • /
    • 2001
  • Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

  • PDF

Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition (금속유기 화학증착법으로 증착시킨 $RuO_2$박막의 성장에 미치는 증착온도와 산소의 영향)

  • 신웅철;윤순길
    • Journal of the Korean Ceramic Society
    • /
    • v.34 no.3
    • /
    • pp.241-248
    • /
    • 1997
  • RuO2 thin films were deposited on SiO2(1000$\AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{\circ}C$. RuO2 thin films deposited onto SiO2(1000$\AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$\AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

  • PDF

Improvement of the adhesion and resistivity of low-pressure chemical vapor deposited tungsten films by controlling deposition parameters (LPCVD로 증착한 텅스텐 박막의 증착 조건 제어에 의한 접착성 및 저항 특성 향상)

  • 노관종;윤선필;윤영수;노용한
    • Journal of the Korean Vacuum Society
    • /
    • v.9 no.4
    • /
    • pp.321-327
    • /
    • 2000
  • Tungsten(W) thin films with good adhesion property and low resistivity (~10 $\mu$\Omega$$.cm) were deposited directly on $SiO_2$ by LPCVD. The adhesion property of W thin films on $SiO_2$ improves as the temperature and/or $SiH_4/WF_6$ gas ratio increase. Specifically tungsten thin films could be deposited on $SiO_2$ even at $350^{\circ}C$ if the gas ratio of 2 was employed. The resistivity of tungsten thin films deposited at $350^{\circ}C$ was high due to the presence of $\beta$-W. However, the resistivity can be minimized by increasing the amount of $H_2$ gas flow. Therefore, it is shown in this work that the adhesion of tungsten thin films on $SiO_2$ can be improved simply by controlling the process parameters (e.g., temperature, gas ratio and $H_2$ flow rate) without employing complex deposition methods or additional glue layers.

  • PDF

Characterization of SrRuO3 Conducting Thin Films Grown on p-Si (100) Substrates by Metalorganic Chemical Vapor Deposition

  • Cuong Nguyen Duy;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
    • /
    • v.6 no.1
    • /
    • pp.14-17
    • /
    • 2005
  • The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

Structure Behavior of Sputtered W-B-C-N Thin Film for various nitrogen gas ratios (PVD법으로 증착한 W-B-C-N 박막의 질소량에 따른 구조변화 연구)

  • Song, Moon-Kyoo;Lee, Chang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.109-110
    • /
    • 2005
  • We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

  • PDF

A study on the properties of transparent conductive ZnO:Al films on variation substrate temperature (기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화)

  • 양진석;성하윤;금민종;손인환;신성권;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.525-528
    • /
    • 2001
  • ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

  • PDF