• 한국소음진동공학회논문집
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• 제17권11호
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• pp.1013-1020
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• 2007

In this paper, the predictions and measurements of sound transmission loss(STL) are discussed for various types of acoustical materials and carpets. Random incidence sound transmission losses are measured by the sound intensity method. The in-house software HONUS2005 is used to predict TL and estimate the various physical properties such as the flow resistivity, the structure factor, the porosity, the Possion's ratio, and etc. After this estimation, various multi-layered materials with a steel plate are measured and predicted. In particular, Carpets are assumed to be membranes to predict acoustical performance. To confirm this assumption, double and triple-layered cases are also observed including two different kinds of carpets.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 추계학술대회논문집
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• pp.885-891
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• 2003

Effects of each acoustic property on absorption characteristics of polyester fiber materials has been studied in this paper. It would be impossible for us to measure effects of each acoustic property by experimental method since we cannot make sound-absorbing materials in which only one of the properties is changed. We have adopted a numerical prediction method to carry out parameter studies for each acoustic property. And to get a general behavior of acoustic performance of the materials, the numerical simulation has been repeated to several cases of different bulk density. Finally we have obtained frequency-dependent control factors in the absorption performance which gives us design capability of acoustic absorbing materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.79-81
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• 1996

We fabricated SrTiO$_3$thin film capacitor on the Ag/Si-wafer by RF sputtering deposition. And I-V characteristics and structual analysis of the thin film capacitor are investigated. We found that the leakage current of the films during deposition is strongly denpent on the ambient gas and substrate temperature. Because of increase of activation energy, leakage current increased at high temperature and resistivity of the films was decreased. According to the increase of oxygen gas flow rate, the conductivity of thin film capacitor was increased and leakage current was decreased.

• 반도체디스플레이기술학회지
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• 제4권4호
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• pp.5-8
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• 2005

In this study, we prepared the ITO thin film for TOLED(Top-emitting OLED) or flexible display at room temperature using the FTS(Facing Targets Sputtering Apparatus). We observed characteristics of deposited thin films as a function of sputtering conditions. XRD patterns were independence trom oxygen gas flow and input current. But electrical and optical properties were strongly dependence. In the results, we could prepare good properties of ITO thin films resistivity of $4.27X10^{-4}[\Omega-cm]$, transmittance of over 80% at working gas pressure 1[mTorr], input current 0.6[A], oxygen gas ratio 0.3[sccm], at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1500-1501
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• 2006

Because AZO thin film has the potential applications, Preparing AZO thin films on the polymer substrate has been widely studied. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at $O_2$ gas flow rate of 0.05 and sputtering power of 100W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.