• Title/Summary/Keyword: Flow Resistivity

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Geophysical surveys for delineation of leachate flows from AMD and buried rock wastes in Kwangyang abandoned mine (광양 폐광산의 산성광산배수의 유동경로 및 폐광석 탐지를 위한 지구물리탐사)

  • 김지수;한수형;윤왕중;김대화;이경주;최상훈;이평구
    • Economic and Environmental Geology
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    • v.36 no.2
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    • pp.123-131
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    • 2003
  • Geophysical surveys(electrical resistivity, self-potential, seismic refraction, GPR) were conducted to investigate the physical properties of the subsurface, and to delineate the flow channel of leachate from a AMD(acid mine drainage), buried rock wastes and tailings, and drainage pipes at an abandoned mine(Kwangyang mine). Especially in rainy season the sites appear to be abundant in AMD leachate, characterized by electrical conductivities of 0.98-1.10 ms/S. Electrical resistivity sections indicate that the leachate flows running in two directions at southern part rise up through the narrow fracture zones at the central part and contaminates the surrounding soil and stream. Such schematic features at the anomalous zone are well correlated with negative peaks in self-potential data, the limited penetration depth in GPR data and low velocity zone in seismic refraction data. Shallow high-resistivity zone is associated with the buried rock wastes which cause the diffractions in GPR image. In addition, the events at depth of approximately 1-1.25 m in GPR sections must be the metal pipes through which AMD is drained off to the inner bay.

Properties of Al-doped ZnO Transparent Conducting Oxide Films Deposited with Ar Flow Rate by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 증착된 Al 도핑된 ZnO 투명 전도 산화막의 Ar 유량에 따른 특성)

  • Yi, I.H.;Kim, D.K.;Kim, H.B.
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.206-210
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    • 2010
  • Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

Effect of Substrate Temperature and O2 Introduction With ITO Deposition by Electron Beam Evaporation on Polycyclic Olefin Polymer (전자빔으로 폴리사이클릭 올레핀 기판에 ITO 증착시 기판온도 및 산소 도입의 영향)

  • Ahn, Hee-Jun;Ha, KiRyong
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.742-748
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    • 2005
  • Transparent conductive indium-tin oxide (ITO) films are widely used as transparent electrodes for flat panel displays. Many of the ITO films for practical use have been prepared by magnetron sputtering, chemical vapor deposition, electron beam evaporation, etc. An oxide target composed of 10 wt% $SnO_2$ and 90 wt% $In_2O_3$ has been deposited onto polycyclic olefin polymer (POP) substrate by electron beam evaporation. POP has a higher glass transition temperature ($Tg=330^{\circ}C$) than other conventional polymers. In this study, the effects of substrate temperature and the $O_2$ introduction flow rate were investigated in terms of physical, electrical and optical properties of deposited ITO films. We investigated the effects of processing variables such as substrate temperature and the oxygen introduction flow rate. The best electrical and optical properties of deposited ITO films obtained from this study were electrical resistivity value of ${\rho}=1.78{\times}10^{-3}{\Omega}{\cdot}cm$ and optical transmittance of about 85% at 8 sccm (Standard Cubic Centimeter per Minute) $O_2$ introduction flow rate, $5{\AA}/sec$ deposition rate, $1000{\AA}$ deposited ITO thickness and $200^{\circ}C$ substrate temperature.

Experimental Study on Coffee-ring Effect of Silver Nanowire with Different Parameters (은 나노와이어 특성에 따른 커피 링 현상에 대한 실험적 연구)

  • Kang, Giho;Wang, Xiaofeng;Seong, Baekhoon;Lee, Hyungdong;Byun, Doyoung
    • Journal of the Korean Society of Visualization
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    • v.15 no.2
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    • pp.16-20
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    • 2017
  • A coffee-ring effect is from capillary flow by different evaporation rate across the droplet. The capillary flow tends particles to accumulate at the edges of the droplet and makes the ring-shaped stain pattern. These coffee-ring formation and suppression of coffee-ring have been a critical role in printing and coating technologies. In this study, we present the experimental study on coffee-ring effect of silver nanowire inside the evaporating sessile droplet. Size and concentration effect of nanowires at coffee-ring effect has been investigated. From the coffee-ring, we observed the regimes of connected rings and disconnected ones and measure the resistivity of single ring pattern with different nanowire length.

Industry-University-Research Collaborative Geoscientific Study in Pocheon area for Groundwater Survey, Part I: Borehole Technology (포천지역 지하수기초조사 산학연 공동탐사 사례연구(I): 공내탐사기술)

  • Yu, Young-Chul;Lee, Sang-Tae;You, Young-Jun;Hwang, Se-Ho;Sin, Je-Hyun
    • 한국지구물리탐사학회:학술대회논문집
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    • 2005.05a
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    • pp.117-122
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    • 2005
  • The purpose of this study is to analyze a correlation between lithology, rock physical property and fracture zone by multiple-logging method, which includes optic borehole image, suspension type PS, resistivity, SP, natural gamma, density, caliper logging located in Ogar test area, Changsu, Pocheon-gun, Gyunggi Province. The outstanding geophysical logging responses particularly shown from lithology pattern, fracture zone, dike zone. in result, the depth of fracture zone which enable groundwater flow estimated at $67{\sim}69m$.

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Characterization of $SnO_2$ Thin Films Prepared by Thermal-CVD (열화학증착법으로 제조된 $SnO_2$박막의 특성)

  • Ryu, Deuk-Bae;Lee, Su-Wan
    • Korean Journal of Materials Research
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    • v.11 no.1
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    • pp.15-19
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    • 2001
  • Transparent and conducting tin oxide thin films were prepared on soda lime silicate glass by thermal chemical vapour deposition. Thin films were fabricated from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant. The properties of fabricated tin oxide films are highly changed with variations of substrate temperature. Optimized thin films could be prepared on TMT, which flow rate of 8 sccm, oxygen flow rate of 150 sccm and substrate temperature of 38$0^{\circ}C$. We reduced deposition temperature about$ 180^{\circ}C$ by using of oxygen containing ozone instead of pure oxygen and resistivity of thin films was decreased from ~ ${\times}10^{-2}{\Omega}cm$ to ~${\times}10^{-3}{\Omega}cm$.

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Properties of IZTO Thin Film prepared by the Hetero-Target sputtering system (ITO-IZO 이종 타겟 이용한 Indium Zinc Tin Oxide(IZTO)박막의 특성)

  • Kim, Dae-Hyun;Rim, You-Seong;Jang, Kyung-Uk;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.439-440
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    • 2008
  • Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

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Performance Comparison of Regularization Methods in Electrical Resistance Tomography (전기 저항 단층촬영법에서의 조정기법 성능비교)

  • Kang, Suk-In;Kim, Kyung-Youn
    • Journal of IKEEE
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    • v.20 no.3
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    • pp.226-234
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    • 2016
  • Electrical resistance tomography (ERT) is an imaging technique where the internal resistivity distribution inside an object is reconstructed. The ERT image reconstruction is a highly nonlinear ill-posed problem, so regularization methods are used to achieve desired image. The reconstruction outcome is dependent on the type of regularization method employed such as l2-norm, l1-norm, and total variation regularization method. That is, use of an appropriate regularization method considering the flow characteristics is necessary to attain good reconstruction performance. Therefore, in this paper, regularization methods are tested through numerical simulations with different flow conditions and the performance is compared.

The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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Energy Efficiency Improvement of Vanadium Redox Flow Battery by Integrating Electrode and Bipolar Plate

  • Kim, Min-Young;Kang, Byeong-Su;Park, Sang-Jun;Lim, Jinsub;Hong, Youngsun;Han, Jong-Hun;Kim, Ho-Sung
    • Journal of Electrochemical Science and Technology
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    • v.12 no.3
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    • pp.330-338
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    • 2021
  • An integral electrode-bipolar plate assembly, which is composed of electrode, conductive adhesive film (CAF) and bipolar plate, has been developed and evaluated for application with a vanadium redox flow battery (VRB) to decrease contact resistance between electrode and bipolar plate. The CAF, made of EVA (ethylene-vinyl-acetate) material with carbon black or CNT (Carbon Nano Tube), is applied between the electrode and the bipolar plate to enable an integral assembly by adhesion. In order to evaluate the integral assembly of VRB by adhesive film, the resistivity of integral assembly and the performance of single cell were investigated. Thus, it was verified that the integral assembly is applicable to redox flow battery. Through resistance and contact resistance of bare EVA and CAF films on bipolar plate were changed. Among the adhesive films, CAF film coated with carbon black showed the lowest value in through resistance, and CAF film coated with CNT showed the lowest value in contact resistance, respectively. The efficiency of VRB single cell was improved by applying CAF films coated with carbon black and CNT, resulting in the reduced overvoltage in charging process. Therefore, the energy efficiency of both CAF films, about 84%, were improved than that of blank cell, about 79.5 % under current density at 40 mA cm-2. The energy efficiency of the two cells were similar, but carbon black coated CAF improved the coulomb efficiency and CNT coated CAF improved the voltage efficiency, respectively.