• Journal of the Korean Geotechnical Society
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• v.29 no.1
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• pp.23-27
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• 2013

The risks of debris flows caused by climate change have increased significantly around the world. Recently, landslide disaster prevention technology is more focused on the failure and post-failure dynamics to mitigate the hazards in flow-prone area. In particular, we should define the soil strength and flow characteristics to estimate the debris flow mobility in the mountainous regions in Korea. To do so, we selected known ancient landslides area: Inje, Pohang and Sangju debris flows. Firstly we measured physical and mechanical properties: liquidity index and undrained shear strength by fall cone penetrometer. From the test results, we found that there is a possible relationship between liquidity index and undrained shear strength, $C_{ur}=(1.2/I_L)^{3.3}$, in the selected areas, even though they were different in geological compositions. Assuming that the yield stress is equal to the undrained shear strength at the initiation of sliding, we examined the flow characteristics of weathered soils in Korea. When liquidity index is given as 1, 1.5 and 3.0, the debris flow motion of weathered soils is compared with that of mud-rich sediments, which are known as low-activity clays. At $I_L=1$, it seems that debris flow could reach approximately 250m after 5 minutes. As liquidity index increased from 1 to 3, the debris flow propagation of weathered soils is twice than that of low-activity clays. It may be due to the fact that soil masses mixed with the ambient water and then highly fragmented during flow, thereby leading to the high mobility. The results may help to predict the debris flow propagation and to develop disaster prevention technology at similar geological settings, especially for the weathered soils, in Korea.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.11a
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• pp.79-83
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• 2005

SEA is a useful tool to predict noise and vibration response in high frequency region but has a weak point not to be able to express modal behavior in low frequency region. For a structure with middle subsystem having relatively higher modal density than excited subsystem and receiving subsystem, we studied the possibility that the modal behavior of receiving subsystem can express by considering finite mobility of excited subsystem. For a simply three-coupled beams which is chosen for feasibility study, the response of receiving beam was investigated with varying the length & area moment of inertia of middle beam. In case that the middle beam has relatively higher modal density than exciting beam, the application to finite mobility of excited beam led to express modal behavior of receiving beam relatively well.

• Journal of Internet of Things and Convergence
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• v.6 no.3
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• pp.39-44
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• 2020

In this paper, we propose a SDN-based fog computing service mobility support scheme. Fog computing architecture has been attracted because it enables task offloading services to IoT(Internet of Things) devices which has limited computing and power resources. However, since static as well as mobile IoT devices are candidate service targets for the fog computing service, the efficient task offloading scheme considering the mobility should be required. Especially for the IoT services which need low-latency response, the new connection and task offloading delay with the new fog computing node after handover can occur QoS(Quality of Service) degradation. Therefore, this paper proposes an efficient service mobility support scheme which considers both task migration and flow rule pre-installations. Task migration allows for the service connectivity when the fog computing node needs to be changed. In addition, the flow rule pre-installations into the forwarding nodes along the path after handover enables to reduce the connection delay and service interruption time.

• Korean Journal of Materials Research
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• v.15 no.8
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• KIPS Transactions on Computer and Communication Systems
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• v.3 no.1
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• pp.7-14
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• 2014

The rapid increase of mobile devices such as smart phone and smart pad have raised the needs for seamless multimedia services during moving at anytime and anywhere. Current 4G mobile devices are equipped with both 4G (LTE) and WLAN (WiFi) interfaces, and mobile services operators provide wireless Internet services using 4G network with a wider coverage and WiFi zone. Generally users prefer to use the Internet services through WLAN rather than LTE in the coverage of WLAN. However, since WLAN has a long L2 handover latency, it is difficult to support seamless services during a handover. In this paper, we proposed an efficient handover scheme based on flow mobility for WLANs to support a seamless service during handovers by using the overlaid 4G network with a wider coverage. Also, we showed the outperformance of the proposed scheme on a testbed.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.901-904
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• 2007

The power flow analysis (PFA) can be effectively used to predict structural vibration in medium-to-high frequency ranges. In this paper, vibration experiments have been performed to observe the analytical characteristics of the power flow analysis of the vibration of various coupled plates. Those plates include two plates coupled with angles of $90^{\circ}$\;and\;30^{\circ}$, respectively. In the experiment, the loss factor and the input mobility at a source point on each coupled plate have been measured. The data for the loss factors have been used as the input data to predict the vibration of the coupled plates with PFA. The frequency response functions have been measured over the surface of the coupled plates. The comparison between the experimental results and the predicted PFA results for the frequency response functions has been performed.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.