• 한국지반공학회논문집
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• 제29권1호
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• pp.23-27
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• 2013

기후변화에 따른 토석류 발생과 그로 인한 피해가 세계적으로 증가 추세에 있다. 토석류 연구는 역학적 관점에서 파괴 후(post-failure) 거동에 해당하며 지반강도와 유동특성을 분석함으로써 특성화할 수 있다. 본 연구는 국내의 토석류 발생지역인 상주(화강암 풍화토), 인제(편마암 풍화토), 포항(이암 및 셰일) 지역을 대상으로 지반의 물성-전단강도 상관관계와 토석류의 유동특성을 평가하였다. 본 연구지역을 대상으로 스웨덴 낙하 콘(Swedish Fall cone) 시험장치를 이용하여 지반의 물성 및 지반강도 사이에 일정한 상관관계가 있음을 밝혔다. 실험결과에 따르면, 인제, 상주, 포항지역에서 채취된 시료에 대해 액성지수(IL)와 비배수 전단강도($C_{ur}$) 사이에 $C_{ur}=(1.2/I_L)^{3.3}$의 관계식이 성립한다. 토석류 흐름을 지배하는 항복응력은 재성형 비배수 전단강도에 상응하는 것으로 간주하고, Bingham 모델과 액성지수-항복응력 관계식을 이용하여 토석류의 유동성을 조사하였다. 유동해석은 국내 풍화토와 낮은 활성점토를 구분하여 적용하였다. 이때 액성지수는 액성한계를 기준으로 $I_L=1$, 1.5, 3.0으로 구분하여 비교분석하였다. 동일한 액성지수($I_L=1$)에 대해, 토석류의 발생 5분 경과 후 최대 이동거리는 250m에 다다른다. 액성지수가 3으로 증가 될 경우, 토석류의 이동거리를 5분까지 살펴본 결과, 국내 풍화토는 낮은 활성점토에 비해 2배 이상 큰 유동성이 있음을 알 수 있었다. 본 유동성 평가기술은 토석류 피해저감기술 전략수립에 활용할 수 있을 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 추계학술대회논문집
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• pp.79-83
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• 2005

SEA is a useful tool to predict noise and vibration response in high frequency region but has a weak point not to be able to express modal behavior in low frequency region. For a structure with middle subsystem having relatively higher modal density than excited subsystem and receiving subsystem, we studied the possibility that the modal behavior of receiving subsystem can express by considering finite mobility of excited subsystem. For a simply three-coupled beams which is chosen for feasibility study, the response of receiving beam was investigated with varying the length & area moment of inertia of middle beam. In case that the middle beam has relatively higher modal density than exciting beam, the application to finite mobility of excited beam led to express modal behavior of receiving beam relatively well.

• 사물인터넷융복합논문지
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• 제6권3호
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• pp.39-44
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• 2020

본 논문은 SDN 기반 네트워크에서 fog computing 서비스의 이동성을 제안하고자 한다. Fog computing 아키텍처는 컴퓨팅 및 배터리 자원의 제약이 있는 IoT(Internet of Things) 기기들에게 테스크 오프로딩을 가능하게 함으로써 IoT의 저지연/고성능 서비스를 위한 방안으로 연구되고 있다. 하지만 fog computing 아키텍처에서는 고정된 IoT 기기 뿐만 아니라 이동하는 IoT 기기도 서비스 대상 단말로 고려되어야 하기 때문에 이러한 기기의 이동성을 고려한 오프로딩 방안이 필요하다. 특히 저지연 응답 시간을 요구하는 IoT 서비스의 경우, 오프로딩 이후 단말이 이동했을 때 새로운 fog computing 노드와의 새로운 통신 연결 및 테스크 오프로딩 과정을 다시 수행해야 하기 때문에 지연시간이 발생하여 사용자의 QoS(Quality of Service) 저하가 발생할 수 있다. 그러므로 본 연구에서는 단말의 이동성을 고려하여 테스크 또는 테스크의 결과를 이동 후의 fog computing 노드로 미리 migration 시키고 데이터 전송을 위한 rule 또한 미리 배치시킴으로써 통신 지연 및 서비스 복구 지연 시간을 줄일 수 있는 방안을 제시하고자 한다.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• 정보처리학회논문지:컴퓨터 및 통신 시스템
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• 제3권1호
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• pp.7-14
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• 2014

스마트 폰, 스마트 패드 등 다양한 모바일 기기의 등장으로 언제, 어디서나 이동 중에도 끊김없는 멀티미디어 서비스의 필요성이 증대하고 있다. 현재 4G 모바일 기기들은 4G (LTE)와 WLAN (WiFi) 인터페이스를 동시에 가지고 있으며, 이동 통신사업자들은 커버리지가 넓은 4G망 뿐만 아니라 WiFi zone을 통하여 무선 인터넷 서비스를 지원하고 있다. 일반적으로 사용자들은 WLAN 커버리지내에서는 LTE를 통한 서비스 보다도 데이터 사용량에 제한이 없는 WLAN을 통한 서비스를 선호하고 있다. 그러나 WLAN은 L2 핸드오버 지연이 매우 크기 때문에 핸드오버를 수행하는 동안에 끊김없는 서비스가 어려운 문제가 있다. 본 논문에서는 flow mobility를 기반으로 WLAN 간에 핸드오버를 수행하는 동안 서비스 반경이 넓은 4G망을 활용하여 끊김없는 서비스를 지원할 수 있는 방안을 제안하였으며, 테스트베드 구현을 통하여 제안 방안의 우수성을 검증하였다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 춘계학술대회논문집
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• pp.901-904
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• 2007

The power flow analysis (PFA) can be effectively used to predict structural vibration in medium-to-high frequency ranges. In this paper, vibration experiments have been performed to observe the analytical characteristics of the power flow analysis of the vibration of various coupled plates. Those plates include two plates coupled with angles of $90^{\circ}$\;and\;30^{\circ}$, respectively. In the experiment, the loss factor and the input mobility at a source point on each coupled plate have been measured. The data for the loss factors have been used as the input data to predict the vibration of the coupled plates with PFA. The frequency response functions have been measured over the surface of the coupled plates. The comparison between the experimental results and the predicted PFA results for the frequency response functions has been performed.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.25-30
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• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.