• Title/Summary/Keyword: Flexible-mask

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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Flexibility Improvement of InGaZnO Thin Film Transistors Using Organic/inorganic Hybrid Gate Dielectrics

  • Hwang, B.U.;Kim, D.I.;Jeon, H.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.341-341
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    • 2012
  • Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

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Modification of Dielectric Surface in Organic Thin-Film Transistor with Organic Molecule

  • Kim, Jong-Moo;Lee, Joo-Won;Kim, Young-Min;Park, Jung-Soo;Kim, Jai-Kyeong;Ju, Byeong-Kwon;Oh, Myung-Hwan;Kim, Jong-Seung;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1030-1033
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    • 2004
  • We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

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MDOF Ionic-Polymer-Metal-Composite Actuators with Selectively Grown Multiple Electrodes (선택적으로 성장 시킨 다중 전극판을 갖는 다자유 IPMC 작동기)

  • Jeon, Jin-Han;Oh, Il-Kwon
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2008.04a
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    • pp.294-298
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    • 2008
  • The ionic polymer-metal composite actuators with selectively grown multiple electrodes were developed to mimic the swimming locomotion of a fish. The developed method is based on combining electroplating with the electroless chemical reduction using the patterned mask. The advantages of this fabrication method are that the initial compositing between the polymer and platinum particles can be assured by the chemical reduction method, and the thickness of each electrode can be controlled easily and rapidly by electroplating. By using the fabricated actuator with a multiple degree of freedom, the oscillatory wave of the flexible membrane actuator was generated and a twisting motion was also realized to verify the possibility of mimicking the fish-like locomotion. The frequency response function was analyzed to investigate the natural frequency and the damping factor by a mechanical shaker and direct electrical excitation through the swept-sine method. Present results show that this novel method can be a promising technique to easily pattern each of multiple electrodes and to implement the biomimetic motion of the polymer actuators with good mechanical bending performance.

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Fabrication of Organic Thin-Film Transistor Using Vapor Deposition Polymerization Method (Vapor Deposition Polymerization 방법을 이용한 유기 박막 트렌지스터의 제작)

  • 표상우;김준호;김정수;심재훈;김영관
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.190-193
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    • 2002
  • The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

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ATCS: An Adaptive TCP Coding Scheme for Satellite IP Networks

  • Dong, Wei;Wang, Junfeng;Huang, Minhuan;Tang, Jian;Zhou, Hongxia
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.5 no.5
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    • pp.1013-1027
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    • 2011
  • In this paper we propose ATCS, a practical TCP protocol coding scheme based on network coding for satellite IP networks. The proposal is specially designed to enhance TCP performance over satellite networks. In our scheme, the source introduces a degree of redundancy and transmits a random linear combination of TCP packets. Since the redundant packets are utilized to mask packet loss over satellite links, the degree of redundancy is determined by the link error rates. Through a simple and effective method, ATCS estimates link error rates in real time and then dynamically adjusts the redundant factor. Consequently, ATCS is adaptable to a wide range of link error rates by coding TCP segments with a flexible redundancy factor. Furthermore, the scheme is compatible with traditional TCP variants. Simulation results indicate that the proposal improves TCP performance considerably.

Fabrication of Superhydrophobic Film with Uniform Structures Using Two Step Lithography and Nanosilica Coating (Two step lithography와 나노 실리카 코팅을 이용한 초발수 필름 제작)

  • Yu, Chaerin;Lee, Dong-Weon
    • Journal of Sensor Science and Technology
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    • v.28 no.4
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    • pp.251-255
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    • 2019
  • We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

Floop: An efficient video coding flow for unmanned aerial vehicles

  • Yu Su;Qianqian Cheng;Shuijie Wang;Jian Zhou;Yuhe Qiu
    • ETRI Journal
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    • v.45 no.4
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    • pp.615-626
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    • 2023
  • Under limited transmission conditions, many factors affect the efficiency of video transmission. During the flight of an unmanned aerial vehicle (UAV), frequent network switching often occurs, and the channel transmission condition changes rapidly, resulting in low-video transmission efficiency. This paper presents an efficient video coding flow for UAVs working in the 5G nonstandalone network and proposes two bit controllers, including time and spatial bit controllers, in the flow. When the environment fluctuates significantly, the time bit controller adjusts the depth of the recursive codec to reduce the error propagation caused by excessive network inference. The spatial bit controller combines the spatial bit mask with the channel quality multiplier to adjust the bit allocation in space to allocate resources better and improve the efficiency of information carrying. In the spatial bit controller, a flexible mini graph is proposed to compute the channel quality multiplier. In this study, two bit controllers with end-to-end codec were combined, thereby constructing an efficient video coding flow. Many experiments have been performed in various environments. Concerning the multi-scale structural similarity index and peak signal-to-noise ratio, the performance of the coding flow is close to that of H.265 in the low bits per pixel area. With an increase in bits per pixel, the saturation bottleneck of the coding flow is at the same level as that of H.264.

A study of fabrication micro bump for TSP testing using maskless lithography system. (Maskless Lithography system을 이용한 TSP 검사 용 micro bump 제작에 관한 연구.)

  • Kim, Ki-Beom;Han, Bong-Seok;Yang, Ji-Kyung;Han, Yu-Jin;Kang, Dong-Seong;Lee, In-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.5
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    • pp.674-680
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    • 2017
  • Touch Screen Panel (TSP) is a widely used personal handheld device and as a large display apparatus. This study examines micro bump fabrication technology for TSP test process. In the testing process, as TSP is changed, should make a new micro bump for probing and modify the testing program. In this paper we use a maskless lithography system to confirm the potential to fabricatemicro bump to reducecost and manufacturing time. The requiredmaskless lithography system does not use a mask so it can reduce the cost of fabrication and it flexible to cope with changes of micro bump probing. We conducted electro field simulation by pitches of micro bump and designed the lithography pattern image for the maskless lithography process. Then we conducted Photo Resist (PR) patterning process and electro-plating process that are involved in MEMS technology to fabricate micro bump.

InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향

  • U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.5-5
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    • 2009
  • Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

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