• Title/Summary/Keyword: Flexible semiconductor

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Effects of Electron Beam Irradiation on the Dielectric Properties of Polyimide Films (전자선 조사에 따른 폴리이미드 필름의 유전특성 변화)

  • Kim, Hyun Bin;Jeun, Joon Pyo;Kang, Phil Hyun
    • Journal of Radiation Industry
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    • v.4 no.3
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    • pp.285-288
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    • 2010
  • Polyimide films have excellent thermal stability, reliable mechanical properties and low dielectric constant. Therefore, this material is widely used in many industrial fields such as microelectronics, flexible circuits, semiconductor products and aerospace materials. In space applications, earth-orbiting hardware operates in environments that generally include neutral particles, charged particles such as trapped protons and electrons, solar protons, and cosmic rays. Under these conditions, polyimide films were changed in the optical, electrical and mechanical properties. Therefore, in this study, we evaluated the effects of electron beam irradiation on polyimide. The O-H functional groups were created on the polyimide film surface in the results of FT-IR spectra. And it was found that the dielectric constants were changed as a function of electron beam dose.

Flexible Planar Heater Comprising Ag Thin Film on Polyurethane Substrate (폴리우레탄 유연 기판을 이용한 Ag 박막형 유연 면상발열체 연구)

  • Seongyeol Lee;Dooho Choi
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.1
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    • pp.29-34
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    • 2024
  • The heating element utilizing the Joule heating generated when current flows through a conductor is widely researched and developed for various industrial applications such as moisture removal in automotive windshield, high-speed train windows, and solar panels. Recently, research utilizing heating elements with various nanostructures has been actively conducted to develop flexible heating elements capable of maintaining stable heating even under mechanical deformation conditions. In this study, flexible polyurethane possessing excellent flexibility was selected as the substrate, and silver (Ag) thin films with low electrical resistivity (1.6 μΩ-cm) were fabricated as the heating layer using magnetron sputtering. The 2D heating structure of the Ag thin films demonstrated excellent heating reproducibility, reaching 95% of the target temperature within 20 seconds. Furthermore, excellent heating characteristics were maintained even under mechanically deforming environments, exhibiting outstanding flexibility with less than a 3% increase in electrical resistance observed in repetitive bending tests (10,000 cycles, based on a curvature radius of 5 mm). This demonstrates that polyurethane/Ag planar heating structure bears promising potential as a flexible/wearable heating element for curved-shaped appliances and objects subjected to diverse stresses such as human body parts.

Metal Oxide Thin Film Transistor with Porous Silver Nanowire Top Gate Electrode for Label-Free Bio-Relevant Molecules Detection

  • Yu, Tae-Hui;Kim, Jeong-Hyeok;Sang, Byeong-In;Choe, Won-Guk;Hwang, Do-Gyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.268-268
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    • 2016
  • Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

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Study of Magnetic Field Shielded Sputtering Process as a Room Temperature High Quality ITO Thin Film Deposition Process

  • Lee, Jun-Young;Jang, Yun-Sung;Lee, You-Jong;Hong, Mun-Pyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.288-289
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    • 2011
  • Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

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Effects of RF power on the Electrical and Optical Properties of GZO Thin Films Deposited on Flexible Substrate (RF 파워가 플렉시블 기판에 성장시킨 GZO 박막의 전기적 및 광학적 특성에 미치는 영향)

  • Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.10
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    • pp.2497-2502
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    • 2014
  • The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

Si-Containing Nanostructures for Energy-Storage, Sub-10 nm Lithography, and Nonvolatile Memory Applications

  • Jeong, Yeon-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.108-109
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    • 2012
  • This talk will begin with the demonstration of facile synthesis of silicon nanostructures using the magnesiothermic reduction on silica nanostructures prepared via self-assembly, which will be followed by the characterization results of their performance for energy storage. This talk will also report the fabrication and characterization of highly porous, stretchable, and conductive polymer nanocomposites embedded with carbon nanotubes (CNTs) for application in flexible lithium-ion batteries. It will be presented that the porous CNT-embedded PDMS nanocomposites are capable of good electrochemical performance with mechanical flexibility, suggesting these nanocomposites could be outstanding anode candidates for use in flexible lithium-ion batteries. Directed self-assembly (DSA) of block copolymers (BCPs) can generate uniform and periodic patterns within guiding templates, and has been one of the promising nanofabrication methodologies for resolving the resolution limit of optical lithography. BCP self-assembly processing is scalable and of low cost, and is well-suited for integration with existing semiconductor manufacturing techniques. This talk will introduce recent research results (of my research group) on the self-assembly of Si-containing block copolymers for the achievement of sub-10 nm resolution, fast pattern generation, transfer-printing capability onto nonplanar substrates, and device applications for nonvolatile memories. An extraordinarily facile nanofabrication approach that enables sub-10 nm resolutions through the synergic combination of nanotransfer printing (nTP) and DSA of block copolymers is also introduced. This simple printing method can be applied on oxides, metals, polymers, and non-planar substrates without pretreatments. This talk will also report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. This approach offers a practical pathway to fabricate high-density resistive memory devices without using high-cost lithography and pattern-transfer processes. Finally, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin $SiO_x$ layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material and reduces the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of $SiO_x$ nanostructures varies.

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What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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Design of flexure hinge to reduce lateral force of laser assisted thermo-compression bonding system (레이저 열-압착 본딩 시스템의 Lateral Force 감소를 위한 유연 힌지의 설계)

  • Lee, Dong-Won;Ha, Seok-Jae;Park, Jeong-Yeon;Yoon, Gil-Sang
    • Design & Manufacturing
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    • v.14 no.3
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    • pp.23-30
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    • 2020
  • Laser Assisted Thermo-Compression Bonding (LATCB) has been proposed to improve the "chip tilt due to the difference in solder bump height" that occurs during the conventional semiconductor chip bonding process. The bonding module of the LATCB system has used a piezoelectric actuator to control the inclination of the compression jig on a micro scale, and the piezoelectric actuator has been directly coupled to the compression jig to minimize the assembly tolerance of the compression jig. However, this structure generates a lateral force in the piezoelectric actuator when the compression jig is tilted, and the stacked piezoelectric element vulnerable to the lateral force has a risk of failure. In this paper, the optimal design of the flexure hinge was performed to minimize the lateral force generated in the piezoelectric actuator when the compression jig is tilted by using the displacement difference of the piezoelectric actuator in the bonding module for LATCB. The design variables of the flexure hinge were defined as the hinge height, the minimum diameter, and the notch radius. And the effect of the change of each variable on the stress generated in the flexible hinge and the lateral force acting on the piezoelectric actuator was analyzed. Also, optimization was carried out using commercial structural analysis software. As a result, when the displacement difference between the piezoelectric actuators is the maximum (90um), the maximum stress generated in the flexible hinge is 11.5% of the elastic limit of the hinge material, and the lateral force acting on the piezoelectric actuator is less than 1N.

Fabrication and Characterization of Red OLED on the Plastic Substrate (플라스틱 기판상에 적색 OLED 제작과 특성 연구)

  • Jeong, Jin-Cheol;Kim, Hyeong-Seok;Kim, Won-Ki;Jang, Ji-Geun
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.15-19
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    • 2009
  • A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

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Electrical and Optical Properties of P-type Amorphous Oxide Semiconductor Mg:$ZnCo_2O_4$ Thin-Film

  • Lee, Chil-Hyoung;Choi, Won-Kook;Lee, Jeon-Kook;Choi, Doo-Jin;Oh, Young-Jei
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.87-87
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    • 2011
  • Oxide semiconductors are attractive materials for thin-film electronics and optoelectronics due to compatibility with synthesis on large-area, glass and flexible substrate. However, development of thin-film electronics has been hampered by the limited number of semiconducting oxides that are p-type. We report on the effect of the oxygen partial pressure ratio in the gas mixture on the electrical and optical properties of spinel Mg:$ZnCo_2O_4$ thin films deposited at room temperature using RF sputtering, that exhibit p-type conduction. The thin-films are deposited at room temperature in a background of oxygen using a polycrystalline Mg:$ZnCo_2O_4$ ablation target. The p-type conduction is confirmed by positive Seebeck coefficient and positive Hall coefficient. The electrical resistivity and carrier concentration in on dependent Mg:$ZnCo_2O_4$ thin films were found to be dependent on the oxygen partial pressure ratio. As a result, it is revealed that the Mg:$ZnCo_2O_4$ thin-films were greatly influenced on the electrical and optical properties by the oxygen partial pressure condition. The visible region of the spectrum of 36~85%, and hole mobility of 1.1~3.7 $cm^2$/Vs, were obtained.

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