• 제목/요약/키워드: Flexible semiconductor

검색결과 217건 처리시간 0.033초

Spin-coating을 이용하여 Flexible Film에 제작된 ZnO TCO의 특성 분석 (The Characterization of Spin Coated ZnO TCO on the Flexible Substrates)

  • 전민철;이규탁;박상욱;이경주;문병무;조원주;고중혁
    • 한국전기전자재료학회논문지
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    • 제25권4호
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    • pp.290-293
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    • 2012
  • This article introduces the characterization of spin coated ZnO transparent conducting oxide on the flexible substrates. As a II-IV compound semiconductor, ZnO has a wide band gap of 3.37 eV with transparent properties. Due to this transparent properties, ZnO materials can be also employed as the transparent conducting electrode materials. Therefore, strong demands have been required for the transparent electrodes with low temperature processing and cheap cost. So, We will investigate the electrical property and optical transmittance of ZnO transparent conducting oxide through the 4-point probe resistivity meter, and ultraviolet-vis spectrometer Lamda 35, respectively.

Oxide/Organic Hybrid TFTs for Flexible Devices

  • Yang, Shin-Hyuk;Cho, Doo-Hee;KoPark, Sang-Hee;Lee, Jeong-Ik;Cheong, Woo-Seok;Yoon, Sung-Min;Ryu, Min-Ki;Byun, Chun-Won;Kwon, Oh-Sang;Cho, Kyoung-Ik;Chu, Hye-Yong;Hwang, Chi-Sun;Ahn, Taek;Choi, Yoo-Jeong;Yi, Mi-Hye;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.393-395
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    • 2009
  • We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

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Poly (4-vinylphenol) 게이트 절연체를 적용한 IGZO TFT의 열처리 온도에 따른 전기적 특성 분석 (Electrical Characteristic Analysis of IGZO TFT with Poly (4-vinylphenol) Gate Insulator according to Annealing Temperature)

  • 박정현;정준교;김유정;정병준;이가원
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.97-101
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    • 2017
  • In this paper, IGZO thin film transistor (TFT) was fabricated with cross-linked Poly (4-vinylphenol) (PVP) gate dielectric for flexible, transparent display applications. The PVP is one of the candidates for low-temperature gate insulators. MIM structure was fabricated to measure the leakage current and evaluate the insulator properties according to the annealing temperature. Low leakage current ( <0.1nA/cm2 @ 1MV/cm ) was observed at $200^{\circ}C$ annealing condition and decreases much more as the annealing temperature increases. The electrical characteristics of IGZO TFT such as subthreshold swing, mobility and ON/OFF current ratio were also improved, which shows that the performance of IGZO TFTs with PVP can be enhanced by reducing the amount of incomplete crosslinking in PVP.

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Development of flexible 3.5' QCIF (176 X144 pixels) OTFT driven OLED;Integration technologies compatible with normal semiconductor processes

  • Kang, Seung-Youl;Ahn, Seong Deok;Oh, Ji-Young;Kim, Gi-Hyun;Koo, Jae Bon;You, In-Kyu;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Chu, Hye-Yong;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.62-65
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    • 2007
  • Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

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High-performance thin-film transistor with a novel metal oxide channel layer

  • Son, Dae-Ho;Kim, Dae-Hwan;Kim, Jung-Hye;Sung, Shi-Joon;Jung, Eun-Ae;Kang, Jin-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.222-222
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    • 2010
  • Transparent semiconductor oxide thin films have been attracting considerable attention as potential channel layers in thin film transistors (TFTs) owing to their several advantageous electrical and optical characteristics such as high mobility, high stability, and transparency. TFTs with ZnO or similar metal oxide semiconductor thin films as the active layer have already been developed for use in active matrix organic light emitting diode (AMOLED). Of late, there have been several reports on TFTs fabricated with InZnO, AlZnSnO, InGaZnO, or other metal oxide semiconductor thin films as the active channel layer. These newly developed TFTs were expected to have better electrical characteristics than ZnO TFTs. In fact, results of these investigations have shown that TFTs with the new multi-component material have excellent electrical properties. In this work, we present TFTs with inverted coplanar geometry and with a novel HfInZnO active layer co-sputtered at room temperature. These TFTs are meant for use in low voltage, battery-operated mobile and flexible devices. Overall, the TFTs showed good performance: the low sub-threshold swing was low and the $I_{on/off}$ ratio was high.

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Flexible electronic-paper active-matrix displays

  • Huitema, H.E.A.;Gelinck, G.H.;Lieshout, P.J.G. Van;Veenendaal, E. Van;Touwslager, F.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.141-144
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    • 2004
  • A QVGA active-matrix backplane is produced on a 25${\mu}m$ thin plastic substrate. A 4-mask photolithographic process is used. The insulator layer and the semiconductor layer are organic material processed from solution. This backplane is combined with the electrophoretic display effect supplied by SiPix and E ink, resulting in an electronic paper display with a thickness of only 100${\mu}m$. This is world's thinnest active-matrix display ever made.

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UV Optical Solutions for Thin Film Processing and Annealing Research

  • Delmdahl, Ralph;Shimizu, Hiroshi;Dittmar, Mirko;Fechner, Burkhard
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.246-249
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    • 2009
  • A compact, flexible family of UV laser material processing systems has been developed to drive advancements in both large area processing and annealing of semiconductor surfaces. UV photons can either be applied via demagnifying a mask pattern image or by scanning a homogenized excimer beam across the substrate area. 193nm, 248nm and 308nm wavelength applications are supported.

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Amorphous Oxide Semiconductor: Factors Determining TFT Performance and Stability

  • Kamiya, Toshio;Nomura, Kenji;Hosono, Hideo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.322-325
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    • 2009
  • Amorphous oxide semiconductors (AOSs) are expected as new channel materials in TFTs for largearea and/or flexible FPDs, and several prototype displays have been demonstrated in these five years since the first report of AOS TFT. In this paper, we review fundamental materials science of AOSs that have been clarified to date in connection with operation characteristics of AOS TFTs.

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고출력 Nd:YAG UV레이저를 이용한 polyimide층과 Cu-metal층의 가공상태에 대한 실험적 고찰 (Experimental Investigation for Ablation Characteristics of Polyimide Layer and Cu-metal Layer using High Power Nd:YAG UV Laser)

  • 최경진;이용현
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.31-36
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    • 2009
  • In this paper, the laser cutting characteristics of the flexible PCB using high power Nd:YAG UV laser were investigated. A specific FPCB model was selected for the experiment. Test sheets were made, which had equal materials and layer structure to those of the outline (OL) region and the contact pad (CP) region in the FPCB. The experiment is made up of two stages. In the first stage of the experiment, the laser cutting fluence was found, which is the threshold fluence to cut the test sheets completely. The laser cutting fluence of the OL sheet is $1781.26{\sim}1970.16\;J/cm^2$ and that of the CP sheet is $2109.34{\sim}2134.34\;J/cm^2$. In the second stage, cutting performance and its qualities were analyzed by the experiment. The laser cutting performance remained almost unchanged for all laser and process parameter sets. The average cutting width (top side/bottom side) of the OL sheet was $40.45\;{\mu}m/11.52\;{\mu}m$ and that of the CP sheet was $22.14\;{\mu}m/10.93\;{\mu}m$. However, the laser cutting qualities were different according to the parameters. The adjacent region of the cutting line on the OL sheet was carbonized as the beam speed was low and the overlap coefficient was high. The surface quality around the cutting line of the CP sheet was about the same. Carbonization and debris occurred on the surface of the cutting line. As a result of the experiment, the cutting qualities were better as the overlap coefficient was made low and beam speed high. Therefore, the overlap coefficient 2 or 3 is proper for the FPCB laser cutting.

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외부챔버와 유연한 튜브로 연결된 LCD 패널 검사기 방진용 공기 스프링의 열 및 동적 연성거동에 대한 연구: PART II, 실험적 검증 및 고찰 (Study on the Thermal and Dynamic Behaviors of Air Spring for vibration isolation of LCD panel inspecting machine connected with an External Chamber through a flexible tube: PART II, Experimental validation and investigation)

  • 석종원;이주홍;김필기
    • 반도체디스플레이기술학회지
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    • 제10권1호
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    • pp.43-49
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    • 2011
  • In this study, the dynamic characteristics of an air spring connected with an external chamber through a flexible tube are examined. The uncoupled dynamic parameters of the air spring are identified through experiments, followed by the suggestion of a model-based approach to obtain the remaining coupled dynamic parameters using the various frequency response functions derived in PART I paper [1]. To improve or control the damping characteristics of the air spring, this vibration isolation air spring system is physically established in laboratory scale. And we attempt to identify various parameters used to describe to air spring system by both theoretically [1] and experimentally, which is performed in this report. The damping parameter of the tube system is identified through experiments on the system incorporated with the air cylinder, and a nonlinear regression procedure is employed to find solutions. The resulting value is used to expect the frequency response function of dynamic pressure in the top chamber (air spring) with respect to that in the bottom chamber (external chamber). Comparison with the experimental data supports the validity of the present estimation procedures. Also, the dynamic mechanism of the damping effects particularly in a low frequency range is investigated through this experimental endeavor.